公开(公告)号：US20140097540A1

公开(公告)日：2014-04-10

申请号：US13677518

申请日：2012-11-15

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Hsiang-Chin Chiu ,  Sheng-Ming Wu ,  Kuang-Hao Yang ,  Kung-An Lin ,  Chen-Yu Wang

IPC: H01L23/373 ,  H01L23/482

CPC classification number: H01L23/3735 ,  H01L21/6836 ,  H01L23/36 ,  H01L23/3736 ,  H01L23/4827 ,  H01L24/05 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05639 ,  H01L2924/10253

Abstract: A semiconductor structure includes a silicon substrate, a titanium layer, a nickel layer, a silver layer and a metallic adhesion layer, wherein the silicon substrate comprises a back surface, and the titanium layer comprises an upper surface. The titanium layer is formed on the back surface, the nickel layer is formed on the upper surface, the silver layer is formed on the nickel layer, and the metallic adhesion layer is formed between the nickel layer and the silver layer.

Abstract translation: 半导体结构包括硅衬底，钛层，镍层，银层和金属粘合层，其中硅衬底包括背面，并且钛层包括上表面。 钛层形成在背面，镍层形成在上表面，银层形成在镍层上，并且金属粘合层形成在镍层和银层之间。