公开(公告)号：US20230326896A1

公开(公告)日：2023-10-12

申请号：US18108733

申请日：2023-02-13

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Sheng-Jen Wu ,  Shih-Chung Chang ,  Hsueh-Shun Yeh ,  Chun-Te Lee

IPC: H01L23/00

CPC classification number: H01L24/26 ,  H01L24/32 ,  H01L24/29 ,  H01L24/05 ,  H01L2224/26125 ,  H01L2224/04026 ,  H01L2224/05558 ,  H01L2224/05573 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2924/0132 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05644 ,  H01L2224/05672 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29109 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29017 ,  H01L2224/29019 ,  H01L2224/29034 ,  H01L2224/32225

Abstract: A COF package includes a substrate and a chip, composite bumps on the chip are bonded to leads on the substrate. Each of the composite bumps includes a raising strip, a UBM layer and a bonding layer. A bonding rib is formed on the bonding layer because of the raising strip and the UBM layer, and the bonding rib on each of the composite bumps can be inserted into each of the leads and surface-contact with each of the leads to increase weld length and bonding strength between the bonding layer and the leads and further reduce a force required for bonding the chip to the substrate in a flip-chip bonding process.

公开(公告)号：US20230326894A1

公开(公告)日：2023-10-12

申请号：US18078170

申请日：2022-12-09

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Fei-Jain Wu ,  Sheng-Jen Wu ,  Hsueh-Shun Yeh

IPC: H01L23/00 ,  H01L21/56

CPC classification number: H01L24/13 ,  H01L2224/05573 ,  H01L24/16 ,  H01L24/32 ,  H01L24/83 ,  H01L24/81 ,  H01L24/05 ,  H01L21/563 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2924/3011 ,  H01L2224/32225 ,  H01L2224/81201 ,  H01L2224/83201 ,  H01L2224/13007 ,  H01L2224/13019 ,  H01L2224/1319 ,  H01L2224/13541 ,  H01L2224/13553 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L24/73

Abstract: In a bonding process of a flip chip bonding method, a chip is bonded to contact pads of a substrate by composite bumps which each includes a raiser, a UBM layer and a bonding layer. Before the bonding process, the surface of the bonding layer facing toward the substrate is referred to as a surface to be bonded. During the bonding process, the surface to be bonded is boned to the contact pad and become a bonding surface on the contact pad. The bonding surface has an area greater than that of the surface to be bonded so as to reduce electrical impedance between the chip and the substrate.