公开(公告)号：US08658528B2

公开(公告)日：2014-02-25

申请号：US13753936

申请日：2013-01-30

Applicant: Chipbond Technology Corporation

Inventor： Chih-Ming Kuo ,  Yie-Chuan Chiu ,  Lung-Hua Ho

IPC: H01L21/44

CPC classification number: H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/034 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11472 ,  H01L2224/11903 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: A bumping process includes providing a silicon substrate; forming a titanium-containing metal layer on silicon substrate, the titanium-containing metal layer comprises a plurality of first areas and a plurality of second areas; forming a first photoresist layer on titanium-containing metal layer; patterning the first photoresist layer to form a plurality of first opening slots; forming a plurality of copper bumps within first opening slots, said copper bump comprises a first top surface and a first ring surface; removing the first photoresist layer; forming a second photoresist layer on titanium-containing metal layer; patterning the second photoresist layer to form a plurality of second opening slots; forming a plurality of bump isolation layers at spaces, the first top surfaces and the first ring surfaces; forming a plurality of connective layers on bump isolation layers; removing the second photoresist layer, removing the second areas to form an under bump metallurgy layer.

Abstract translation: 碰撞过程包括提供硅衬底; 在硅衬底上形成含钛金属层，所述含钛金属层包括多个第一区域和多个第二区域; 在含钛金属层上形成第一光致抗蚀剂层; 图案化第一光致抗蚀剂层以形成多个第一开口槽; 在第一开口槽内形成多个铜凸块，所述铜凸块包括第一上表面和第一环表面; 去除第一光致抗蚀剂层; 在含钛金属层上形成第二光致抗蚀剂层; 图案化所述第二光致抗蚀剂层以形成多个第二开口槽; 在空间，第一顶表面和第一环表面处形成多个凸块隔离层; 在凸块隔离层上形成多个连接层; 去除第二光致抗蚀剂层，去除第二区域以形成凸起下的冶金层。

公开(公告)号：US20130196498A1

公开(公告)日：2013-08-01

申请号：US13753936

申请日：2013-01-30

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chih-Ming Kuo ,  Yie-Chuan Chiu ,  Lung-Hua Ho

IPC: H01L21/768

CPC classification number: H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/034 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11472 ,  H01L2224/11903 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: A bumping process includes providing a silicon substrate; forming a titanium-containing metal layer on silicon substrate, the titanium-containing metal layer comprises a plurality of first areas and a plurality of second areas; forming a first photoresist layer on titanium-containing metal layer; patterning the first photoresist layer to form a plurality of first opening slots; forming a plurality of copper bumps within first opening slots, said copper bump comprises a first top surface and a first ring surface; removing the first photoresist layer; forming a second photoresist layer on titanium-containing metal layer; patterning the second photoresist layer to form a plurality of second opening slots; forming a plurality of bump isolation layers at spaces, the first top surfaces and the first ring surfaces; forming a plurality of connective layers on bump isolation layers; removing the second photoresist layer, removing the second areas to form an under bump metallurgy layer.

Abstract translation: 碰撞过程包括提供硅衬底; 在硅衬底上形成含钛金属层，所述含钛金属层包括多个第一区域和多个第二区域; 在含钛金属层上形成第一光致抗蚀剂层; 图案化第一光致抗蚀剂层以形成多个第一开口槽; 在第一开口槽内形成多个铜凸块，所述铜凸块包括第一顶表面和第一环表面; 去除第一光致抗蚀剂层; 在含钛金属层上形成第二光致抗蚀剂层; 图案化所述第二光致抗蚀剂层以形成多个第二开口槽; 在空间，第一顶表面和第一环表面处形成多个凸块隔离层; 在凸块隔离层上形成多个连接层; 去除第二光致抗蚀剂层，去除第二区域以形成凸起下的冶金层。

公开(公告)号：US20130181346A1

公开(公告)日：2013-07-18

申请号：US13743844

申请日：2013-01-17

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chih-Ming Kuo ,  Yie-Chuan Chiu ,  Lung-Hua Ho

IPC: H01L23/498

CPC classification number: H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/034 ,  H01L2224/0347 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/11472 ,  H01L2224/1182 ,  H01L2224/11906 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2224/05552

Abstract: A bumping process includes providing a silicon substrate, forming a titanium-containing metal layer on the silicon substrate, wherein the titanium-containing metal layer comprises a plurality of first areas and a plurality of second areas, forming a photoresist layer on the titanium-containing metal layer, patterning the photoresist layer to form a plurality of opening slots, forming a plurality of bottom coverage layers at the opening slots, proceeding a heat procedure, forming a plurality of external coverage layers to make each of the external coverage layers connect with each of the bottom coverage layers, wherein said external coverage layer and said bottom coverage layer form a wrap layer and completely surround the copper bump, forming a plurality of connective layers on the external coverage layers, removing the photoresist layer, removing the second areas and enabling each of the first areas to form an under bump metallurgy layer.

Abstract translation: 凸起工艺包括提供硅衬底，在硅衬底上形成含钛金属层，其中含钛金属层包括多个第一区域和多个第二区域，在含钛金属层上形成光致抗蚀剂层 金属层，图案化光致抗蚀剂层以形成多个开口槽，在开口槽处形成多个底部覆盖层，进行热过程，形成多个外部覆盖层，以使每个外部覆盖层与每个 的底部覆盖层，其中所述外部覆盖层和所述底部覆盖层形成包裹层并且完全围绕铜凸块，在外部覆盖层上形成多个连接层，去除光致抗蚀剂层，去除第二区域并使能 每个第一区域形成凸块下的冶金层。