公开(公告)号：FR2826523A1

公开(公告)日：2002-12-27

申请号：FR0114792

申请日：2001-11-15

Applicant: CIT ALCATEL

Inventor： DIALLO ALMADIDI ,  PUISIEUX PHILIPPE

IPC: H02M1/38 ,  H02M3/335 ,  H02M1/16

Abstract: The MOSFETs having low voltage conduction thresholds, are controlled by their gate-source wirings. The transistors have sources parallel to voltage dividers, and gates that are adapted to be respectively connected to gates and source of associated power MOSFETs. An independent claim is included for self-synchronized rectifier.

公开(公告)号：FR2851379A1

公开(公告)日：2004-08-20

申请号：FR0301914

申请日：2003-02-18

Applicant: CIT ALCATEL

Inventor： DIALLO ALMADIDI ,  PUISIEUX PHILIPPE ,  THEREZE JEAN MARIE

IPC: H02M3/335 ,  H02M3/28

Abstract: The converter has a transformer with primary and secondary windings. A rectifier has one auto-controlled interrupter (20) passing during conducting phase of a controlled interrupter. Another auto-controlled interrupter (30) passes during non-conducting phase of the controlled interrupter. A MOSFET control unit passes the interrupter (30) independently of voltage to boundary of the secondary winding during free wheel phase.

公开(公告)号：FR2851379B1

公开(公告)日：2008-02-01

申请号：FR0301914

申请日：2003-02-18

Applicant: CIT ALCATEL

Inventor： DIALLO ALMADIDI ,  PUISIEUX PHILIPPE ,  THEREZE JEAN MARIE

IPC: H02M3/28 ,  H02M3/335

Abstract: The converter has a transformer with primary and secondary windings. A rectifier has one auto-controlled interrupter (20) passing during conducting phase of a controlled interrupter. Another auto-controlled interrupter (30) passes during non-conducting phase of the controlled interrupter. A MOSFET control unit passes the interrupter (30) independently of voltage to boundary of the secondary winding during free wheel phase.

公开(公告)号：FR2826523B1

公开(公告)日：2003-12-19

申请号：FR0114792

申请日：2001-11-15

Applicant: CIT ALCATEL

Inventor： DIALLO ALMADIDI ,  PUISIEUX PHILIPPE

IPC: H02M1/38 ,  H02M3/335 ,  H02M1/16

Abstract: The MOSFETs having low voltage conduction thresholds, are controlled by their gate-source wirings. The transistors have sources parallel to voltage dividers, and gates that are adapted to be respectively connected to gates and source of associated power MOSFETs. An independent claim is included for self-synchronized rectifier.