公开(公告)号：JPH0845869A

公开(公告)日：1996-02-16

申请号：JP18542995

申请日：1995-07-21

Applicant: CONS RIC MICROELETTRONICA

Inventor： ANNA BATSUTAGURIA ,  PIEERUJIYORUJIO FUARIKA ,  KESAARE RONSHISUBATSURE ,  SARUBATOORE KOTSUFUA ,  BIITO RAINERI

IPC: H01L21/22 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/336 ,  H01L21/8222 ,  H01L29/06 ,  H01L29/10 ,  H01L29/167 ,  H01L29/32 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To locally reduce charge carrier life in an integrated device by injecting ions into an active region of the integrated device, where rare gas ions form bubbles, by a large beam amount and at a high energy level. SOLUTION: A field oxide film is grown on an epitaxial layer 2 on a semiconductor substrate 1. Then, acceptor atoms are diffused in the epitaxial layer 2, to form an active region comprising P deep main-body regions 3a and 3b. Next, P main-body regions 4a and 4b are formed while leaving a gate oxide film 10a on which a polysilicon gate 6 is deposited, oxide films 10d and 10c, and silicon layers 6b and 6c, on the two boundaries of the device. Next, source regions 5a to 5d are formed, and before impurities are injected into the source regions, a large amount of helium is injected at an energy level such that a layer including helium bubbles 71a to 71d surrounds the source regions. Thus, the helium bubbles are formed at a deep base position in the deep main-body regions of a parasitic transistor 9.