公开(公告)号：JPH09129722A

公开(公告)日：1997-05-16

申请号：JP26699796

申请日：1996-10-08

Applicant: CONS RIC MICROELETTRONICA

Inventor： FRANCO GIOVANNI ,  CAMALLERI CATENO MARCO ,  FRISINA FERRUCCIO

IPC: H01L21/761 ,  H01L21/225 ,  H01L21/265 ,  H01L29/06

Abstract: PROBLEM TO BE SOLVED: To provide an electric power device wherein high yield efficiency is obtained with low ion implantation energy and provided with a deep edge ring by, with the use of a boron and Al as a dopant, forming a deep ring at the same time for the main body of a device in a single thermal process, and further, an oxide layer used during Al ion implantation. SOLUTION: On a heavily doped N type substrate 10, a slightly doped N type epitaxial layer 20 is grown, further, over the upper part of the epitaxial layer 20, an oxide 30 is grown. By photo-etching, an main body is exposed itself in an area 30, and boron 40 is implanted for a p are 42 to be generated. Then, oxide etching is performed, the area for Al ion implantation is made exposed, thus an Al ring is configured. By masking the main body area with a photosensitive material layer, an Al ion 60 is implanted. Then, through a single thermal diffusion process, P /N joint 80 formed through formation of a thermal oxide layer 70 and boron, and one or more P /N joints 90 formed by Al are formed at the same time.

公开(公告)号：DE69531783D1

公开(公告)日：2003-10-23

申请号：DE69531783

申请日：1995-10-09

Applicant: CONS RIC MICROELETTRONICA

Inventor： FRANCO GIOVANNI ,  CAMALLERI CATENO MARCO ,  FRISINA FERRUCCIO

IPC: H01L21/761 ,  H01L21/225 ,  H01L21/265 ,  H01L29/06

Abstract: A construction method for power devices with deep edge ring, which has the particularity of comprising the following steps: (a) the growth of a lightly doped N-type epitaxial layer (20) on a heavily doped N-type substrate (10); (b) the growth of an oxide (30) on the upper portion of the epitaxial layer (20); (c) the masked implantation of boron ions (40); (d) an oxide etching to expose regions for aluminum ion implantation; (e) the growth of a layer of preimplantation oxide; (f) the masking of the body regions with a layer of photosensitive material (50) and the implantation of aluminum ions (60); and (g) a single thermal diffusion process for forming a layer of thermal oxide (70) above the epitaxial layer (20) and for simultaneously forming at least one deep aluminum ring (90) that is adjacent to the body region doped with boron (80).

公开(公告)号：DE69531783T2

公开(公告)日：2004-07-15

申请号：DE69531783

申请日：1995-10-09

Applicant: CONS RIC MICROELETTRONICA

Inventor： FRANCO GIOVANNI ,  CAMALLERI CATENO MARCO ,  FRISINA FERRUCCIO

IPC: H01L21/761 ,  H01L21/225 ,  H01L21/265 ,  H01L29/06

Abstract: A construction method for power devices with deep edge ring, which has the particularity of comprising the following steps: (a) the growth of a lightly doped N-type epitaxial layer (20) on a heavily doped N-type substrate (10); (b) the growth of an oxide (30) on the upper portion of the epitaxial layer (20); (c) the masked implantation of boron ions (40); (d) an oxide etching to expose regions for aluminum ion implantation; (e) the growth of a layer of preimplantation oxide; (f) the masking of the body regions with a layer of photosensitive material (50) and the implantation of aluminum ions (60); and (g) a single thermal diffusion process for forming a layer of thermal oxide (70) above the epitaxial layer (20) and for simultaneously forming at least one deep aluminum ring (90) that is adjacent to the body region doped with boron (80).