公开(公告)号：JPH05121678A

公开(公告)日：1993-05-18

申请号：JP9665392

申请日：1992-04-16

Applicant: CONS RIC MICROELETTRONICA

Inventor： RAFUAEERE ZANBURAANO

IPC: H01L21/76 ,  H01L21/331 ,  H01L21/74 ,  H01L21/761 ,  H01L21/8222 ,  H01L21/8228 ,  H01L27/06 ,  H01L27/082 ,  H01L29/73

Abstract: PURPOSE: To provide a monolithic semiconductor device which can thin a separation region and suitably adjust the dopant distribution, and which improves the price and productivity. CONSTITUTION: A base region 30 of a power transistor and a horizontal separation region 31 of an integrated control circuit or a collector region 32 of an integrated control circuit are grown sequentially on a lower epitaxial layer 2, which is a second conductivity type, opposite to a first conductivity type, and a part of an epitaxial layer 3 of the first conductivity type constitutes them.