公开(公告)号：JPH07169963A

公开(公告)日：1995-07-04

申请号：JP23350994

申请日：1994-09-28

Applicant: CONS RIC MICROELETTRONICA

Inventor： RAFUAERU ZANBURANO

IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H01L29/78

Abstract: PURPOSE: To minimize the effect of a parasitic element by providing a first conductivity-type contact region that is heavily doped, where the first electrode of a first diode is contained at a first conductivity-type epitaxial layer region that has been doped lightly. CONSTITUTION: Each has first and second electrodes and a plural of serially connection diodes D1-D4. The first diode D1 of a plural of diodes has first electrodes 12 and 13 connected to a gate layer 7 of a power device M. The first electrodes 12 and 13 of the first diode D1 have the first conductive-type contact region 12, that is doped has been heavily contained in a first conductivity-type epitaxial layer region that has been doped lightly separated from an epitxial layer 2 that is doped lightly by a second conductivity-type embedded region 14 and a second conductivity-type annular region 15 that is doped heavily, extended from a semiconductor top surface to the embedded region 14, thus minimizing the injection of a carrier from the first electrodes 12 and 13 of the diode D1 to the second electrodes 14 and 15 and at the same time minimizing the gain of a parasitic transistor.

公开(公告)号：JPH0715006A

公开(公告)日：1995-01-17

申请号：JP8050794

申请日：1994-04-19

Applicant: CONS RIC MICROELETTRONICA

Inventor： RAFUAERU ZANBURANO

IPC: H01L29/78 ,  H01L27/02 ,  H01L27/04

Abstract: PURPOSE: To provide an integrated structure protective device suitable for protecting a logic level power MOS device during a static discharge. CONSTITUTION: An integrated structure protective device suitable for protecting a power MOS device from a static discharge is provided with a junction diode 9. The junction diode 9 is surrounded by a second-conductivity-type intrinsic region 11 and is provided with a first electrode comprising a first-conductivity- type heavily doped region 12 constituting the junction diode 9. The first electrode is surrounded by a second-conductivity-type heavily doped deep intrinsic region 10. The heavily doped region 12 is connected to a polycrystalline silicon gate layer 7 constituting the gate of the power MOS device and connects the heavily doped deep intrinsic region 10 to the source region 6 of the power MOS device.

公开(公告)号：JPH06334189A

公开(公告)日：1994-12-02

申请号：JP9999894

申请日：1994-05-13

Applicant: CONS RIC MICROELETTRONICA

Inventor： RAFUAERU ZANBURANO

IPC: H01L27/06 ,  H01L27/02 ,  H01L27/04 ,  H01L27/08 ,  H01L29/78 ,  H01L29/784

Abstract: PURPOSE: To reduce waste of a region to a minimum by a method, wherein a current sensing resistor of an integrated structure consists of a doped-region, which extends from the deep body region of at least one piece of the cell of first cells to the deep body region of the cell, which corresponds to the above cell, of second cells. CONSTITUTION: A power MOS device, such as an N-channel MOSFET, is constituted of a plurality of cells 1a, and a plurality of cells 1b and all of these cells are provided with a highly-doped P deep body region 2. The P deep body region 2 of at least one piece of the cell 1a of the main power MOSFET is extendedly provided for annexing the deep body region 2 of the cell 1a to the P deep body region 2 of the cell 1b, which corresponds to the deep body region 2 of the cell 1a, of a sensing MOSFET, extending to deep body regions 20 obtained in such a way as to come into contact with each other on the sides opposite to each other by source electrodes Sa and Sb. Such electrodes Sa and Sb are electrically connected with each other by the extended deep body regions 20, and a sensing resistor R is introduced in the series-connection of the source electrodes Sa and Sb to source electrodes Sb of the sensing MOSFET.