公开(公告)号：JPH0799206A

公开(公告)日：1995-04-11

申请号：JP12518694

申请日：1994-06-07

Applicant: CONS RIC MICROELETTRONICA

Inventor： SEBASUCHIAANO APARO ,  ARUFUONSO PATEI ,  ARUDO BITANTSUA

IPC: H01L27/06 ,  H01L27/07 ,  H01L21/331 ,  H01L21/06 ,  H01L29/73

Abstract: PURPOSE: To remove a problem of parasitic elements by a method wherein a first junction diode is connected between an external base terminal and a collector of a bipolar switching transistor, and a second junction diode is connected between the external base terminal and a base area of the bipolar switching transistor. CONSTITUTION: A first junction diode D1 comprising a base-collector junction of zero gain transistors is connected between an external base terminal B2 and a collector 2 of a bipolar switching transistor T. Meanwhile, a second junction diode D2 comprising a base-emitter junction of zero gain transistors is connected between the external base terminal B2 and a base area P2 of the bipolar switching transistor T. Thereby, the transistors can be manufactured without causing a problem in a parasitic element.