公开(公告)号：JPH07202202A

公开(公告)日：1995-08-04

申请号：JP32275894

申请日：1994-12-26

Applicant: CONS RIC MICROELETTRONICA

Inventor： SESAARE RONSHISUBUEERU

IPC: H01L21/52 ,  H01L23/051 ,  H01L23/48 ,  H01L29/06 ,  H01L29/417 ,  H01L29/78

Abstract: PURPOSE: To eliminate the risk of damaging the surface of a semiconductor, even when a contact pressure required for superior electrical contact to a power MOS device is applied. CONSTITUTION: A semiconductor device chip 22 is provided with a dummy cell 11, and the thickness of an oxide layer 7 in dummy cell 11 is made thicker than that of the oxide layer 7 in the residual part of the semiconductor device chip 22, and a polysilicon layer 8 and a metal layer 10 are protruded higher than the residual part of the semiconductor device chip 2, and the pressure applied with a washer 16 is made to be applied to the entire surface of the dummy cell 11.