公开(公告)号：JPH065866A

公开(公告)日：1994-01-14

申请号：JP6763491

申请日：1991-03-08

Applicant: CONS RIC MICROELETTRONICA

Inventor： SESARE RONSHISUBAARE

IPC: H01L29/78 ,  H01L21/331 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/739 ,  H01L29/784

Abstract: PURPOSE: To form a device with a high breakdown voltage in an inverse direction by forming a top-bottom side part separation region, allowing the side part of an anode junction to be bounced upwards, and covering the termination part of the surface region of a chip with SiO2 layer and a metallic layer that constitutes the electric field plate of a device successively. CONSTITUTION: A silicon thin film 2 is subjected to epitaxial growth on a single- crystal silicon substrate 1 of P . Silicon is subjected to thermal oxidation treatment, thus forming SiO2 layer 3. The SiO2 oxide layer 3 is eliminated along a side frame 4, and B is injected. The B is diffused, a region 5 is formed, and then the surface oxide layer 3 is eliminated. A silicon layer 6, in which P is doped, is subjected to epitaxial growth. The B is injected during this process, and a diffused side part region 5 is also diffused upwards. The silicon is subjected to a thermal oxidation treatment, and SiO2 layer 7 is formed. The B is injected to a frame 8 at a position corresponding to the frame 4, before an oxidation diffusion treatment. The part where B is injected is diffused and becomes one part with the region 5 that is located at a lower side, and a top and a bottom are isolated, thus forming a device.