公开(公告)号：JPH08139080A

公开(公告)日：1996-05-31

申请号：JP24610495

申请日：1995-09-25

Applicant: CONS RIC MICROELETTRONICA

Inventor： SHIRINO RAPISARUDA

IPC: C30B33/12 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a method for etching a cobalt silicide layer for prescribing small shape dimensions. SOLUTION: In a method for etching a cobalt silicide layer 15, that is superposed on a polysilicon layer 14 formed on a silicon substrate 12 and is selectively covered with a mask material 16, the cobalt silicide layer 15 is exposed to a pressure stipulated to a gas nitrogen flow, a gas nitrogen is ionized by using a prescribed power, and a plasma for selectively eliminating the cobalt silicide layer 15 is formed.