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公开(公告)号：WO2004028952A3
公开(公告)日：2004-09-16
申请号：PCT/US0320057
申请日：2003-06-26
Applicant: CORNELL RES FOUNDATION INC
Inventor： SUBRAMANIAN KANAKASABAPATHI , MACDONALD NOEL C
CPC classification number: B81C1/00142 , B81B2203/0361 , B81C1/00071 , B81C1/00111 , B81C2201/0112 , Y10S977/70 , Y10S977/762
Abstract: A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.
Abstract translation: 蚀刻和化学钝化之间的过程会产生粗糙的侧壁，并转化为小的结构。 在一个实施例中，使用掩模来限定单晶硅晶片中的线。 该过程在与周期对应的线的侧壁上产生波纹。 在一个实施例中，线被氧化以形成对应于每个波纹的硅线。 在另一个实施例中去除氧化物以形成从微锐尖到金属丝光子阵列的结构。 流体通道通过氧化相邻的波纹侧壁而形成。 同样的掩模也用于形成MEMS器件的其他结构。
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公开(公告)号：AU2003290510A1
公开(公告)日：2004-04-19
申请号：AU2003290510
申请日：2003-06-26
Applicant: CORNELL RES FOUNDATION INC
Inventor： SUBRAMANIAN KANAKASABAPATHI , MACDONALD NOEL C
Abstract: A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.
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