公开(公告)号：DE69637863D1

公开(公告)日：2009-04-23

申请号：DE69637863

申请日：1996-06-20

Applicant: CORNELL RES FOUNDATION INC

Inventor： ADAMS SCOTT G ,  BERTSCH FRED M ,  SHAW KEVIN A ,  MACDONALD NOEL C

IPC: H03H9/125 ,  H03H9/205 ,  H02N1/00 ,  H03H9/02 ,  H03H9/24 ,  H03H9/46

Abstract: A tunable electromicromechanical resonator structure incorporates an electrostatic actuator which permits reduction or enhancement of the resonant frequency of the structure. The actuator consists of two sets of opposed electrode fingers, each set having a multiplicity of spaced, parallel fingers. One set is mounted on a movable portion of the resonator structure and one set is mounted on an adjacent fixed base on substrate, with the fingers in opposed relationship and their adjacent ends spaced apart by a gap. An adjustable bias voltage across the sets of electrodes adjusts the resonant frequency of the movable structure.

公开(公告)号：DE69233641T2

公开(公告)日：2007-08-09

申请号：DE69233641

申请日：1992-05-12

Applicant: CORNELL RES FOUNDATION INC

Inventor： ARNEY SUSANNE CHRISTINE ,  MACDONALD NOEL C ,  YAO JUN JASON

IPC: G01B7/34 ,  H01J37/063 ,  B81B1/00 ,  B81B3/00 ,  G01B7/00 ,  G01N27/00 ,  G01N37/00 ,  G01Q20/04 ,  G01Q60/16 ,  G01Q70/12 ,  G01Q70/14 ,  H01J37/28 ,  H02N1/00

Abstract: Self-aligned, opposed, nanometer dimension tips (12, 22) are fabricated in pairs, one of each pair being located on a movable (24) single crystal beam, with the beam being movable in three dimensions with respect to a substrate (18) carrying the other tip (12) of a pair. Motion of one tip with respect to the other is controlled or sensed by transducers (120, 122, 124, 126) formed on the supporting beams (62, 64). Spring means (76, 80, 86, 88) in each beam allow axial motion of the beam. The tips (12, 22) and beams (62, 64) are fabricated from single crystal silicon substrate (18) and the tips (12, 22) may be electrically isolated from the substrate (18) by fabricating insulating segments (40, 54) in the beam structure.

公开(公告)号：DK0834218T3

公开(公告)日：2009-04-20

申请号：DK96923321

申请日：1996-06-20

Applicant: CORNELL RES FOUNDATION INC

Inventor： ADAMS SCOTT G ,  MACDONALD NOEL C ,  BERTSCH FRED M ,  SHAW KEVIN A

IPC: H03H9/125 ,  H03H9/205 ,  H02N1/00 ,  H03H9/02 ,  H03H9/24 ,  H03H9/46

Abstract: A tunable electromicromechanical resonator structure incorporates an electrostatic actuator which permits reduction or enhancement of the resonant frequency of the structure. The actuator consists of two sets of opposed electrode fingers, each set having a multiplicity of spaced, parallel fingers. One set is mounted on a movable portion of the resonator structure and one set is mounted on an adjacent fixed base on substrate, with the fingers in opposed relationship and their adjacent ends spaced apart by a gap. An adjustable bias voltage across the sets of electrodes adjusts the resonant frequency of the movable structure.

公开(公告)号：CA2224402C

公开(公告)日：2008-06-17

申请号：CA2224402

申请日：1996-06-20

Applicant: CORNELL RES FOUNDATION INC

Inventor： ADAMS SCOTT G ,  MACDONALD NOEL C ,  SHAW KEVIN A ,  BERTSCH FRED M

IPC: H03H9/125 ,  H03H9/24 ,  H02N1/00 ,  H03H9/02 ,  H03H9/205 ,  H03H9/46

Abstract: A tunable electromechanical resonator structure incorporates an electrostatic actuator (66, 68) which permits reduction or enhancement of the resonant frequency of the structure. The actuator consists of two sets of opposed electrode fingers, each set having a multiplicity of spaced, parallel fingers (70, 72, 84, 90). One set (70, 72) is mounted on a movable portion (54) of the resonator structure and one set (84, 90) is mounted on an adjacent fixed base (132, 134) on the substrate, adjacent ends spaced apart by a gap (86, 92). An adjustable bias voltage (130) across the sets of electrodes adjusts the resonant frequency of the movable structure.

公开(公告)号：AU2003290510A1

公开(公告)日：2004-04-19

申请号：AU2003290510

申请日：2003-06-26

Applicant: CORNELL RES FOUNDATION INC

Inventor： SUBRAMANIAN KANAKASABAPATHI ,  MACDONALD NOEL C

IPC: B81C1/00 ,  H01L21/20

Abstract: A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.

公开(公告)号：DE69233641D1

公开(公告)日：2006-09-07

申请号：DE69233641

申请日：1992-05-12

Applicant: CORNELL RES FOUNDATION INC

Inventor： ARNEY SUSANNE CHRISTINE ,  MACDONALD NOEL C ,  YAO JUN JASON

IPC: G01B7/34 ,  H01J37/063 ,  B81B1/00 ,  B81B3/00 ,  G01B7/00 ,  G01N27/00 ,  G01N37/00 ,  G01Q20/04 ,  G01Q60/16 ,  G01Q70/12 ,  G01Q70/14 ,  H01J37/28 ,  H02N1/00

Abstract: Self-aligned, opposed, nanometer dimension tips (12, 22) are fabricated in pairs, one of each pair being located on a movable (24) single crystal beam, with the beam being movable in three dimensions with respect to a substrate (18) carrying the other tip (12) of a pair. Motion of one tip with respect to the other is controlled or sensed by transducers (120, 122, 124, 126) formed on the supporting beams (62, 64). Spring means (76, 80, 86, 88) in each beam allow axial motion of the beam. The tips (12, 22) and beams (62, 64) are fabricated from single crystal silicon substrate (18) and the tips (12, 22) may be electrically isolated from the substrate (18) by fabricating insulating segments (40, 54) in the beam structure.

公开(公告)号：CA2154357C

公开(公告)日：2004-03-02

申请号：CA2154357

申请日：1993-12-03

Applicant: CORNELL RES FOUNDATION INC

Inventor： SHAW KEVIN A ,  ZHANG Z LISA ,  MACDONALD NOEL C

IPC: C23F4/00 ,  B81B3/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/302 ,  H01L21/3065 ,  H01L29/82 ,  H01L29/84 ,  H01L21/64 ,  G02B5/08 ,  H01L21/44

Abstract: The invention provides a single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independent of crystal orientation . A dielectric mask (12) on a single-crystal substrate (154) is patterned to define isolating trenches. A protective conformal layer (28) is applied to the resultant structure. The conformal layer (28) on the floor of the trenches is removed and a second etch deepens the trench to expose the mesa walls which are removed during the release step by isotropic etching. A metal layer (44) is formed on the resultant structur e providing opposed plates (156) and (158) of a capacitor. The cantilever beam (52) with the supporting end wall (152) extends the grid-lik e structure (150) into the protection of the deepened isolation trenches (54). A membrane can be added to the released structures to increas e their weight for use in accelerometers, and polished for use as movable mirrors.

公开(公告)号：WO9936941A3

公开(公告)日：2000-02-10

申请号：PCT/US9900784

申请日：1999-01-14

Applicant: CORNELL RES FOUNDATION INC

Inventor： ADAMS SCOTT G ,  SHAW KEVIN A ,  WEBB RUSSELL Y ,  REED BRYAN W ,  MACDONALD NOEL C ,  DAVIS TIMOTHY J

IPC: B81C1/00 ,  B81B3/00 ,  H01L21/76 ,  H01L21/762 ,  H01L29/84 ,  H01L21/00

CPC classification number: H01L21/76224 ,  B81B2203/0118 ,  B81B2203/033 ,  B81C1/00142 ,  B81C1/00698

Abstract: An isolation process which enhances the performance of silicon micromechanical devices incorporates dielectric isolation segments (254, 256) within the silicon microstructure, which is otherwise composed of an interconnected grid of cantilevered beams. A metal layer on top of the beams (276, 278) provides interconnects (244, 246) and also allows contact to the silicon beams. Multiple conduction paths are incorporated through a metal patterning step prior to structure definition. The invention improves manufacturability of previous processes by performing all lithographic patterning steps on flat topographies, and removing complicated metal sputtering steps required of most high aspect ratio processes. With little modification, the invention can be implemented with integrated circuit fabrication sequences for fully integrated devices.

Abstract translation: 提高硅微机械器件性能的隔离工艺在硅微结构内部包含介质隔离段（254,256），否则由互连的悬臂梁组成。 梁（276,278）的顶部上的金属层提供互连（244,246），并且还允许与硅光束的接触。 在结构定义之前，通过金属图案化步骤并入多个导电路径。 本发明通过在平面形貌上进行所有平版印刷图案化步骤，以及去除大多数高纵横比工艺所需的复杂金属溅射步骤，从而提高先前工艺的可制造性。 通过很少的修改，本发明可以用于完全集成的器件的集成电路制造序列。

公开(公告)号：DE69942486D1

公开(公告)日：2010-07-22

申请号：DE69942486

申请日：1999-01-14

Applicant: CORNELL RES FOUNDATION INC

Inventor： ADAMS SCOTT G ,  SHAW KEVIN A ,  WEBB RUSSELL Y ,  REED BRYAN W ,  MACDONALD NOEL C ,  DAVIS TIMOTHY J

IPC: B81C1/00 ,  H01L21/00 ,  B81B3/00 ,  H01L21/76 ,  H01L21/762 ,  H01L29/84

公开(公告)号：ES2321889T3

公开(公告)日：2009-06-12

申请号：ES96923321

申请日：1996-06-20

Applicant: CORNELL RES FOUNDATION INC

Inventor： ADAMS SCOTT G ,  BERTSCH FRED M ,  SHAW KEVIN A ,  MACDONALD NOEL C

IPC: H03H9/125 ,  H03H9/205 ,  H02N1/00 ,  H03H9/02 ,  H03H9/24 ,  H03H9/46

Abstract: SE TRATA DE UNA ESTRUCTURA DE RESONADOR ELECTROMECANICO QUE SE PUEDE AFINAR Y QUE INCORPORA UN IMPULSOR ELECTROSTATICO (66, 68) QUE PERMITE LA ATENUACION O LA ELEVACION DE LA FRECUENCIA DE RESONANCIA DE LA ESTRUCTURA. EL IMPULSOR CONSISTE EN DOS CONJUNTOS DE ELECTRODOS OPUESTOS, EN FORMA DE DEDOS, CADA UNO DE CUYOS CONJUNTOS TIENE VARIOS DEDOS SEPARADOS Y PARALELOS ENTRE SI (70, 72, 84, 90). UN CONJUNTO (70, 72) ESTA MONTADO SOBRE UNA PARTE MOVIL (54) DE LA ESTRUCTURA DEL RESONADOR Y EL OTRO CONJUNTO (84, 90) ESTA MONTADO SOBRE UNA BASE FIJA ADYACENTE (132, 134) SITUADA SOBRE EL SUSTRATO; LOS EXTREMOS ADYACENTES ESTAN SEPARADOS POR UN ESPACIO VACIO (86, 92). UNA TENSION DE POLARIZACION GRADUABLE (130) PASANDO POR LOS DOS CONJUNTOS DE ELECTRODOS AFINA LA FRECUENCIA DE RESONANCIA DE LA ESTRUCTURA MOVIL.