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    METHOD OF FORMING A SILICON LAYER ON A SURFACE
    1.
    发明公开
    METHOD OF FORMING A SILICON LAYER ON A SURFACE 失效
    一种用于生产硅层的表面

    公开(公告)号：EP0986461A4

    公开(公告)日：2004-05-26

    申请号：EP98922495

    申请日：1998-05-26

    Applicant: CORNING INC

    Inventor： BEGUIN ALAIN ,  LEHUEDE PHILIPPE

    IPC: G02B6/13 ,  B32B9/00 ,  C03C17/22 ,  C23C14/14 ,  C23C14/18 ,  C23C14/22 ,  C23F4/00

    CPC classification number: C03C17/22 ,  C03C2217/282 ,  C03C2218/151 ,  C23C14/18 ,  C23C14/22

    Abstract: A method of forming a layer of silicon on a surface of a substrate (10) comprises the steps of depositing silicon on the surface by a physical deposition process such as electron beam evaporation using a silicon source (4) and, during said deposition process, subjecting the forming film to ionic bombardment from an ion gun (20). The resultant silicon film has stresses which are considerably reduced compared to a film produced by an ordinary physical deposition process. This method is particularly well adapted to the formation of relatively thick silicon layers (≥lνm) on a layer (or stack of layers) of silica, to serve as an etching mask in a subsequent deep etching of the silica by reactive ion etching.

    METHOD OF FABRICATING AN OPTICAL COMPONENT AND OPTICAL COMPONENT MADE THEREBY
    2.
    发明公开
    METHOD OF FABRICATING AN OPTICAL COMPONENT AND OPTICAL COMPONENT MADE THEREBY 失效
    过程中的光学元件和用此方法生产的组成

    公开(公告)号：EP1002246A4

    公开(公告)日：2000-09-27

    申请号：EP98933204

    申请日：1998-07-07

    Applicant: CORNING INC

    Inventor： BEGUIN ALAIN ,  LEHUEDE PHILIPPE

    IPC: G02B6/13 ,  G02B6/02 ,  G02B6/12 ,  G02B6/28 ,  G02B6/26 ,  G02B6/32 ,  G02B6/34

    CPC classification number: G02B6/12004 ,  G02B6/12007 ,  G02B2006/12102 ,  G02B2006/12107 ,  G02B2006/12114 ,  G02B2006/12173 ,  G02B2006/12176

    Abstract: An optical component comprising one or more optical elements (35') aligned with the end(s) of one or more waveguides (25') is fabricated by a process in which, first of all, a doped silica core layer (20) is deposited on a substrate (10) (or on a buffer layer on the substrate), and subsequently a partial overclad layer (30A) typically 1-5 mu m thick is deposited on the core layer. The partial overclad layer and core layer are patterned and etched so as simultaneously to define the optical element(s) and the waveguide core(s). Afterwards, the overclad is completed by depositing a further overclad layer (30B). In the case of application of this fabrication method to a grating-based NBWDM device, the metallisation of the grating can precede or follow the deposition of the second overclad portion (30B). In either case, low-temperature deposition processes are required for deposition of this second overclad portion.

    Abstract translation: 一种光学部件，包括“（具有一个或多个波导25）的端部（S）对齐的一个或多个光学元件（35）”由其中一个工艺来制造，首先，掺杂的二氧化硅纤芯层（20）是 沉积在基片（10）（或在衬底上的缓冲层上），并且随后的部分包层（30A）典型地1-5妈妈厚沉积在芯层上。 部分包覆层和核心层图案化并蚀刻以同时限定所述光学元件（S）和波导芯（多个）。 然后，包覆由沉积另一包层（30B）完成。 在该制造方法的应用，以基于光栅的NBWDM装置的情况下，光栅的金属化可以之前或之后的第二包覆部（30B）的沉积。 在任一情况下，需要用于此第二包覆部的沉积的低温沉积工艺。

    METHOD OF FORMING A SILICON LAYER ON A SURFACE
    4.
    发明专利
    METHOD OF FORMING A SILICON LAYER ON A SURFACE 未知

    公开(公告)号：CA2288757A1

    公开(公告)日：1998-12-10

    申请号：CA2288757

    申请日：1998-05-26

    Applicant: CORNING INC

    Inventor： BEGUIN ALAIN ,  LEHUEDE PHILIPPE

    IPC: G02B6/13 ,  B32B9/00 ,  C03C17/22 ,  C23C14/14 ,  C23C14/18 ,  C23C14/22 ,  C23F4/00 ,  B05D3/06

    Abstract: A method of forming a layer of silicon on a surface of a substrate (10) comprises the steps of depositing silicon on the surface by a physical deposition process such as electron beam evaporation using a silicon source (4) and, during said deposition process, subjecting the forming film to ionic bombardment from an ion gun (20). The resultant silicon film has stresses which are considerably reduced compared to a film produced by an ordinary physical deposition process. This method is particularly well adapted to the formation of relatively thick silicon layers (l.mu.m) on a layer (or stack of layers) of silica, to serve as an etching mask in a subsequent deep etching of the silica by reactive ion etching.

    6.
    发明专利
    未知

    公开(公告)号：FR2758321A1

    公开(公告)日：1998-07-17

    申请号：FR9700271

    申请日：1997-01-14

    Applicant: CORNING INC

    Inventor： BEGUIN ALAIN ,  LABORDE PASCALE ,  CAMY PATRICE ,  LERMINIAUX CHRISTIAN

    IPC: G02B6/12 ,  C03C3/095 ,  C03C4/00 ,  C03C13/04 ,  G02B6/00 ,  H01S3/063 ,  H01S3/16 ,  H01S3/17 ,  C03C3/089 ,  G02B6/10

    Abstract: Phosphate free, Er/Yb co-doped borosilicate glass compositions and optical devices made from said compositions are disclosed; said compositions comprising, for 100 parts by weight of: 60 to 70 parts by weight SiO2 or SiO2 + GeO2 with SiO2 always being greater than 40 parts by weight, 8 to 12 parts by weight of B2O3, 10 to 25 parts by weight M2O wherein M2O is an alkali metal oxide, 0 to 3 parts by weight of BaO, 0.1 to 5 parts by weight Er2O3, and from 0.1 to 12 parts by weight of Yb2O3 and from 0 to less than 5 parts by weight F; and within which, the boron atoms are of tetrahedral spatial coordination.

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