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    Detection of low lead impurity level in transmitting optical fluoride crystal for manufacturing integrated circuit chips, by measuring transmission test wavelength through optical fluoride crystal light transmission path length
    1.
    发明专利
    Detection of low lead impurity level in transmitting optical fluoride crystal for manufacturing integrated circuit chips, by measuring transmission test wavelength through optical fluoride crystal light transmission path length 未知

    公开(公告)号：FR2833704A1

    公开(公告)日：2003-06-20

    申请号：FR0116097

    申请日：2001-12-13

    Applicant: CORNING INC

    Inventor： PELL MICHAEL ,  MAYOLET ALEXANDRE ,  TIMOFEEV NIKOLAY

    IPC: C30B11/00 ,  G01N21/33 ,  G01N21/35 ,  G02B1/02

    Abstract: A low lead impurity level in a below 200 nm transmitting optical fluoride crystal is determined by transmitting a transmission test wavelength of 200-210 nm through below 200 nm wavelength transmitting optical fluoride crystal light transmission path length and measuring the transmission of the 200-210 nm test wavelength to provide a lead ppb impurity level measurement less than 900 ppb. Detection of a low lead impurity level in a below 200 nm transmitting optical fluoride crystal, comprises providing a below 200 nm wavelength transmitting optical fluoride crystal (20) having a crystal light transmitting path length (21). The below 200 nm wavelength transmits optical fluoride crystal light transmission path length \-2 mm. A light transmission spectrophotometer is provided having a lamp for producing a transmission test wavelength of 200-210 nm and a transmission detector (28) for measuring transmission of the test wavelength. The transmission test wavelength of 200-210 nm is transmitted through below 200 nm wavelength transmitting optical fluoride crystal light transmission path length and measuring the transmission of the 200-210 nm test wavelength through the path length to provide a lead ppb impurity level measurement less than 900 ppb. An Independent claim is also included for a method of making a below 200 nm wavelength optical element having an absorption coefficient at 200-210 nm of less than 0.0017 cm .

    BEADS OF POLYCRYSTALLINE ALKALI-METAL OR ALKALINE-EARTH METAL FLUORIDE, THEIR PREPARATION AND THEIR USE
    6.
    发明申请
    BEADS OF POLYCRYSTALLINE ALKALI-METAL OR ALKALINE-EARTH METAL FLUORIDE, THEIR PREPARATION AND THEIR USE 审中-公开
    多金属碱金属或碱金属氟化物的珠子及其制备及其使用

    公开(公告)号：WO0125001A9

    公开(公告)日：2002-11-07

    申请号：PCT/US0026439

    申请日：2000-09-26

    Applicant: CORNING INC ,  MAYOLET ALEXANDRE ,  PELL MICHAEL

    Inventor： MAYOLET ALEXANDRE ,  PELL MICHAEL

    IPC: G02B1/02 ,  C01D3/02 ,  C01D15/04 ,  C01F11/22 ,  C30B11/00 ,  C30B29/12 ,  C30B29/60 ,  B32B5/16 ,  C01B9/08 ,  C01F5/28

    CPC classification number: C30B29/60 ,  C01D3/02 ,  C01D15/04 ,  C01F11/22 ,  C30B11/00 ,  C30B29/12

    Abstract: The present invention has the following objectives: polycrystalline alkali-metal or alkaline-earth metal (more particularly CaF2) fluorides, produced in an original form, namely in the form of beads; said beads having a diameter or equivalent diameter greater than or equal to 100 mu m, advantageously between 100 mu m and 2 cm and an apparent density greater than or equal to 60 %, advantageously at least 90 % of the theoretical density of said fluoride; a process for the preparation (the conditioning) of said fluorides; a process for the preparation of single crystals of the corresponding alkali-metal or alkaline-earth metal fluorides that uses polycrystalline fluorides in the aforementioned original form.

    Abstract translation: 本发明具有如下目的：以原始形式即珠粒形式生产的多晶碱金属或碱土金属（更特别是CaF 2）氟化物; 所述珠具有大于或等于100μm的直径或当量直径，有利地在100μm和2cm之间，并且表观密度大于或等于所述氟化物的理论密度的60％，有利地至少90％。 一种用于制备（调节）所述氟化物的方法; 制备使用上述原始形式的多晶氟化物的相应的碱金属或碱土金属氟化物的单晶的方法。

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