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    METHOD OF USING A PLURALITY OF SMALLER MEMS DEVICES TO REPLACE A LARGER MEMS DEVICE
    2.
    发明申请
    METHOD OF USING A PLURALITY OF SMALLER MEMS DEVICES TO REPLACE A LARGER MEMS DEVICE 审中-公开
    使用多个小型MEMS器件来替代大型MEMS器件的方法

    公开(公告)号：WO2010054244A2

    公开(公告)日：2010-05-14

    申请号：PCT/US2009/063616

    申请日：2009-11-06

    Applicant: CAVENDISH KINETICS, INC. ,  SMITH, Charles Gordon ,  KNIPE, Richard L. ,  JOSHI, Vikram ,  GADDI, Roberto ,  UNAMUNO, Anartz ,  VAN KAMPEN, Robertus Petrus

    Inventor： SMITH, Charles Gordon ,  KNIPE, Richard L. ,  JOSHI, Vikram ,  GADDI, Roberto ,  UNAMUNO, Anartz ,  VAN KAMPEN, Robertus Petrus

    IPC: B81C1/00

    CPC classification number: B81B7/04 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2207/053 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/135 ,  H01G5/18 ,  H01G5/40

    Abstract: Embodiments disclosed herein generally include using a large number of small MEMS devices to replace the function of an individual larger MEMS device or digital variable capacitor. The large number of smaller MEMS devices perform the same function as the larger device, but because of the smaller size, they can be encapsulated in a cavity using complementary metal oxide semiconductor (CMOS) compatible processes. Signal averaging over a large number of the smaller devices allows the accuracy of the array of smaller devices to be equivalent to the larger device. The process is exemplified by considering the use of a MEMS based accelerometer switch array with an integrated analog to digital conversion of the inertial response. The process is also exemplified by considering the use of a MEMS based device structure where the MEMS devices operate in parallel as a digital variable capacitor.

    Abstract translation: 本文公开的实施例通常包括使用大量的小MEMS器件来代替单个更大的MEMS器件或数字可变电容器的功能。 大量较小的MEMS器件具有与较大器件相同的功能，但是由于尺寸较小，因此可以使用互补金属氧化物半导体（CMOS）兼容工艺封装在腔中。 通过大量较小器件的信号平均，允许较小器件阵列的精度等同于较大的器件。 通过考虑使用具有惯性响应的集成模数转换的基于MEMS的加速度计开关阵列来举例说明该过程。 还通过考虑使用MEMS器件结构（其中MEMS器件并行地作为数字可变电容器）来使用该过程。

    MEMS LIFETIME ENHANCEMENT
    4.
    发明申请
    MEMS LIFETIME ENHANCEMENT 审中-公开
    MEMS LIFETIME ENMANCEMENT

    公开(公告)号：WO2013188633A1

    公开(公告)日：2013-12-19

    申请号：PCT/US2013/045590

    申请日：2013-06-13

    Applicant: CAVENDISH KINETICS, INC

    Inventor： KHIEU, Cong Quoc ,  JOSHI, Vikram ,  KNIPE, Richard L.

    IPC: H01G5/18 ,  H01G5/38 ,  H01H59/00 ,  H01L27/085

    CPC classification number: H01G5/16 ,  B81B7/02 ,  H01G5/18 ,  H01G5/38 ,  H01H59/0009

    Abstract: The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the number of movements of a switching element in the MEMS device. Rather than returning to a ground state between cycles, the switching element can remain in the same state if both cycles necessitate the same capacitance. For example, if in both a first and second cycle, the switching element of the MEMS device is in a state of high capacitance the switching element can remain in place between the first and second cycle rather than move to the ground state. Even if the polarity of the capacitance is different in successive cycles, the switching element can remain in place and the polarity can be switched. Because the switching element remains in place between cycles, the switching element, while having the same finite number of movements, should have a longer lifetime.

    Abstract translation: 本发明一般涉及通过减少MEMS器件中的开关元件的移动次数来增加MEMS器件寿命的方法。 不是在循环之间返回到基态，如果两个循环都需要相同的电容，则开关元件可以保持在相同的状态。 例如，如果在第一和第二周期中，MEMS器件的开关元件处于高电容的状态，则开关元件可以在第一和第二周期之间保持就位，而不是移动到基态。 即使电容的极性在连续的循环中不同，开关元件也可以保持在适当的位置，并且可以切换极性。 因为开关元件在周期之间保持原位，所以开关元件虽然具有相同的有限数量的运动，应该具有更长的寿命。

    MEMS DEVICE ANCHORING
    8.
    发明申请
    MEMS DEVICE ANCHORING 审中-公开
    MEMS器件锚定

    公开(公告)号：WO2013033526A2

    公开(公告)日：2013-03-07

    申请号：PCT/US2012/053327

    申请日：2012-08-31

    Applicant: CAVENDISH KINETICS, INC ,  RENAULT, Mickael ,  JOSHI, Vikram ,  KNIPE, Richard, L. ,  UNAMUNO, Anartz

    Inventor： RENAULT, Mickael ,  JOSHI, Vikram ,  KNIPE, Richard, L. ,  UNAMUNO, Anartz

    IPC: B81C1/00

    CPC classification number: B81B7/00 ,  B81B2201/016 ,  B81B2203/0307 ,  B81C1/00039 ,  B81C2203/0136 ,  H01G5/16 ,  H01H59/0009 ,  Y10T29/49105

    Abstract: Embodiments of the present invention generally relate to a MEMS device that is anchored using the layer that is deposited to form the cavity sealing layer and/or with the layer that is deposited to form the pull-off electrode. The switching element of the MEMS device will have a flexible or movable portion and will also have a fixed or anchor portion that is electrically coupled to ground. The layer that is used to seal the cavity in which the switching element is disposed can also be coupled to the fixed or anchor portion of the switching element to anchor the fixed or anchor portion within the cavity. Additionally, the layer that is used to form one of the electrodes may be used to provide additional leverage for anchoring the fixed or anchor portion within the cavity. In either situation, the movement of the flexible or movable portion is not hindered.

    Abstract translation: 本发明的实施例总体上涉及一种MEMS器件，其使用被沉积以形成空腔密封层的层和/或被沉积以形成拉脱电极的层来锚定 。 MEMS器件的开关元件将具有柔性或可移动部分，并且还将具有电耦合到地的固定或锚定部分。 用于密封设置开关元件的空腔的层也可以耦合到开关元件的固定部分或锚定部分，以将固定部分或锚定部分锚定在空腔内。 另外，用于形成电极中的一个的层可以用于提供用于将固定或锚定部分锚定在空腔内的附加杠杆作用。 在任何一种情况下，柔性或活动部分的移动都不会受到阻碍。

    METHOD FOR MEMS DEVICE FABRICATION AND DEVICE FORMED
    9.
    发明申请
    METHOD FOR MEMS DEVICE FABRICATION AND DEVICE FORMED 审中-公开
    用于MEMS器件制造的方法和形成的器件

    公开(公告)号：WO2012097234A2

    公开(公告)日：2012-07-19

    申请号：PCT/US2012/021218

    申请日：2012-01-13

    Applicant: CAVENDISH KINETICS, INC ,  RENAULT, Mickael ,  LACEY, Joseph Damian Gordon ,  JOSHI, Vikram ,  MAGUIRE, Thomas L.

    Inventor： RENAULT, Mickael ,  LACEY, Joseph Damian Gordon ,  JOSHI, Vikram ,  MAGUIRE, Thomas L.

    IPC: B81C1/00

    CPC classification number: B81B3/0072 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/096 ,  B81C1/00039 ,  B81C1/00333 ,  B81C1/00476 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2203/0145 ,  B81C2203/0714

    Abstract: The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

    Abstract translation: 本发明一般涉及用于生产MEMS或NEMS装置和装置本身的方法。 与悬臂结构相比，具有较低复合系数的材料的薄层可以沉积在悬臂结构，RF电极和拉出电极上。 薄层允许引入空腔的蚀刻气体降低空腔内的整体蚀刻剂复合速率，从而提高空腔内的牺牲材料的蚀刻速率。 蚀刻剂本身可以通过与悬臂结构的锚固部分线性对准的封装层中的开口引入，使得首先蚀刻最顶层的牺牲材料。 此后，密封材料可以密封空腔并且一直延伸到空腔中，以锚定部分，以向锚固部分提供额外的强度。

    CMP PROCESS FLOW FOR MEMS
    10.
    发明申请
    CMP PROCESS FLOW FOR MEMS 审中-公开
    CMP的CMP过程流程

    公开(公告)号：WO2011109231A2

    公开(公告)日：2011-09-09

    申请号：PCT/US2011/026167

    申请日：2011-02-25

    Applicant: CAVENDISH KINETICS, INC. ,  LACEY, Joseph Damian Gordon ,  MAGUIRE, Thomas L. ,  JOSHI, Vikram ,  YOST, Dennis J.

    Inventor： LACEY, Joseph Damian Gordon ,  MAGUIRE, Thomas L. ,  JOSHI, Vikram ,  YOST, Dennis J.

    IPC: B81C1/00

    CPC classification number: B81C1/00095 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0104

    Abstract: The present invention generally relates to the formation of a micro-electromechanical system (MEMS) cantilever switch in a complementary metal oxide semiconductor (CMOS) back end of the line (BEOL) process. The cantilever switch is formed in electrical communication with a lower electrode in the structure. The lower electrode may be either blanket deposited and patterned or simply deposited in vias or trenches of the underlying structure. The excess material used for the lower electrode is then planarized by chemical mechanical polishing or planarization (CMP). The cantilever switch is then formed over the planarized lower electrode.

    Abstract translation: 本发明一般涉及在线路（BEOL）工艺的互补金属氧化物半导体（CMOS）后端中形成微机电系统（MEMS）悬臂开关。 悬臂开关形成为与结构中的下电极电连通。 下电极可以是毯式沉积和图案化或简单地沉积在底层结构的通孔或沟槽中。 然后通过化学机械抛光或平面化（CMP）将用于下电极的多余材料平坦化。 然后在平坦化的下电极上形成悬臂开关。

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