MEMS DIGITAL VARIABLE CAPACITOR DESIGN WITH HIGH LINEARITY
    1.
    发明申请
    MEMS DIGITAL VARIABLE CAPACITOR DESIGN WITH HIGH LINEARITY 审中-公开
    MEMS数字可变电容器高线性设计

    公开(公告)号:WO2014165624A1

    公开(公告)日:2014-10-09

    申请号:PCT/US2014/032723

    申请日:2014-04-02

    Abstract: The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent C max value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.

    Abstract translation: 本发明一般涉及一种MEMS DVC及其制造方法。 MEMS DVC包括可从距离RF电极间隔第一距离的位置移动的板和距离RF电极间隔第二距离的第二位置小于第一距离的板。 当处于第二位置时,板通过在RF电极上具有RF平台的电介质层与RF电极间隔开。 还可以存在一个或多个次级着陆触点和一个或多个板弯曲触点,以确保该板获得与RF平台的良好接触,并且可以获得一致的C max值。 在图中,PB接触是板弯接触,SL接触是第二着陆接触,PD电极是下拉电极。

    MEMS DEVICE ANCHORING
    3.
    发明申请
    MEMS DEVICE ANCHORING 审中-公开
    MEMS器件锚定

    公开(公告)号:WO2013033526A2

    公开(公告)日:2013-03-07

    申请号:PCT/US2012/053327

    申请日:2012-08-31

    Abstract: Embodiments of the present invention generally relate to a MEMS device that is anchored using the layer that is deposited to form the cavity sealing layer and/or with the layer that is deposited to form the pull-off electrode. The switching element of the MEMS device will have a flexible or movable portion and will also have a fixed or anchor portion that is electrically coupled to ground. The layer that is used to seal the cavity in which the switching element is disposed can also be coupled to the fixed or anchor portion of the switching element to anchor the fixed or anchor portion within the cavity. Additionally, the layer that is used to form one of the electrodes may be used to provide additional leverage for anchoring the fixed or anchor portion within the cavity. In either situation, the movement of the flexible or movable portion is not hindered.

    Abstract translation: 本发明的实施例总体上涉及一种MEMS器件,其使用被沉积以形成空腔密封层的层和/或被沉积以形成拉脱电极的层来锚定 。 MEMS器件的开关元件将具有柔性或可移动部分,并且还将具有电耦合到地的固定或锚定部分。 用于密封设置开关元件的空腔的层也可以耦合到开关元件的固定部分或锚定部分,以将固定部分或锚定部分锚定在空腔内。 另外,用于形成电极中的一个的层可以用于提供用于将固定或锚定部分锚定在空腔内的附加杠杆作用。 在任何一种情况下,柔性或活动部分的移动都不会受到阻碍。

    STRESS CONTROL DURING PROCESSING OF A MEMS DIGITAL VARIABLE CAPACITOR (DVC)
    4.
    发明申请
    STRESS CONTROL DURING PROCESSING OF A MEMS DIGITAL VARIABLE CAPACITOR (DVC) 审中-公开
    MEMS数字可变电容器(DVC)处理过程中的应力控制

    公开(公告)号:WO2014209556A1

    公开(公告)日:2014-12-31

    申请号:PCT/US2014/040824

    申请日:2014-06-04

    CPC classification number: H01G5/16 H01G5/18 H01L28/60

    Abstract: The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.

    Abstract translation: 本发明一般涉及一种MEMS数字可变电容器(DVC)(900)及其制造方法。 MEMS DVC内的可移动板(938)应具有相同的应力水平,以确保MEMS DVC的正常工作。 为了获得相同的应力水平,在制造过程中可移动板与CMOS接地分离。 在板已经完全形成之后,可移动板仅电连接到CMOS接地。 通过使用形成上拉电极的相同层(948)作为将可移动板电耦合到CMOS地的层而发生耦合。 由于相同的层将可移动板耦合到CMOS地,并且还为MEMS DVC提供上拉电极,所以沉积在相同的处理步骤中发生。 通过在形成后将可动板电耦合到CMOS地,可移动板的每个层中的应力可以是基本相同的。

    FABRICATION OF A FLOATING ROCKER MEMS DEVICE FOR LIGHT MODULATION

    公开(公告)号:WO2011028504A3

    公开(公告)日:2011-03-10

    申请号:PCT/US2010/046425

    申请日:2010-08-24

    Abstract: The current disclosure shows how to make a fast switching array of mirrors for projection displays. Because the mirror does not have a via in the middle connecting to the underlying spring support, there is an improved contrast ratio that results from not having light scatter off the legs or vias like existing technologies. Because there are no supporting contacts, the mirror can be made smaller making smaller pixels that can be used to make higher density displays. In addition, because there is not restoring force from any supporting spring support, the mirror stays in place facing one or other direction due to adhesion. This means there is no need to use a voltage to hold the mirror in position. This means that less power is required to run the display.

    MEMS DIGITAL VARIABLE CAPACITOR DESIGN WITH HIGH LINEARITY
    8.
    发明公开
    MEMS DIGITAL VARIABLE CAPACITOR DESIGN WITH HIGH LINEARITY 审中-公开
    数字变压器MEMS-KONDENSATOR MIT HOHERLINEARITÄT

    公开(公告)号:EP2981981A1

    公开(公告)日:2016-02-10

    申请号:EP14724902.3

    申请日:2014-04-02

    Abstract: The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent Cmax value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.

    Abstract translation: 本发明一般涉及一种MEMS DVC及其制造方法。 MEMS DVC包括可从距离RF电极间隔第一距离的位置移动的板和距离RF电极间隔第二距离的第二位置小于第一距离的板。 当处于第二位置时,板通过在RF电极上具有RF平台的电介质层与RF电极间隔开。 也可以存在一个或多个次级着陆触点和一个或多个板弯曲触点,以确保板获得与RF平台的良好接触,并且可以获得一致的C max值。 在图中,PB接触是板弯接触,SL接触是第二着陆接触,PD电极是下拉电极。

    STRESS CONTROL DURING PROCESSING OF A MEMS DIGITAL VARIABLE CAPACITOR (DVC)
    10.
    发明公开
    STRESS CONTROL DURING PROCESSING OF A MEMS DIGITAL VARIABLE CAPACITOR (DVC) 审中-公开
    曝光控制微机电DIGITAL可变电容器的加工过程中(DVC)

    公开(公告)号:EP3014639A1

    公开(公告)日:2016-05-04

    申请号:EP14733050.0

    申请日:2014-06-04

    CPC classification number: H01G5/16 H01G5/18 H01L28/60

    Abstract: The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.

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