Abstract:
The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent C max value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.
Abstract:
The present invention generally relates to a MEMS DVC utilizing one or more MIM capacitors. The MIM capacitor may be disposed between the MEMS device and the RF pad or the MIM capacitor may be integrated into the MEMS device itself. The MIM capacitor ensures that a low resistance for the MEMS DVC is achieved.
Abstract:
Embodiments of the present invention generally relate to a MEMS device that is anchored using the layer that is deposited to form the cavity sealing layer and/or with the layer that is deposited to form the pull-off electrode. The switching element of the MEMS device will have a flexible or movable portion and will also have a fixed or anchor portion that is electrically coupled to ground. The layer that is used to seal the cavity in which the switching element is disposed can also be coupled to the fixed or anchor portion of the switching element to anchor the fixed or anchor portion within the cavity. Additionally, the layer that is used to form one of the electrodes may be used to provide additional leverage for anchoring the fixed or anchor portion within the cavity. In either situation, the movement of the flexible or movable portion is not hindered.
Abstract:
The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.
Abstract:
The current disclosure shows how to make a fast switching array of mirrors for projection displays. Because the mirror does not have a via in the middle connecting to the underlying spring support, there is an improved contrast ratio that results from not having light scatter off the legs or vias like existing technologies. Because there are no supporting contacts, the mirror can be made smaller making smaller pixels that can be used to make higher density displays. In addition, because there is not restoring force from any supporting spring support, the mirror stays in place facing one or other direction due to adhesion. This means there is no need to use a voltage to hold the mirror in position. This means that less power is required to run the display.
Abstract:
Embodiments disclosed herein generally solve a stiction problem in switching devices by using a series of pulses of force which take the switch from being strongly adhered to a landing electrode to the point where it is only weakly adhered. Once in the low adhesion state, the switch can then be pulled away from contact with a lower force provided by either the spring constant of the switch and/or the electrostatic forces resulting from low voltages applied to nearby electrodes.
Abstract:
The present invention generally relates to a MEMS DVC utilizing one or more MIM capacitors. The MIM capacitor may be disposed between the MEMS device and the RF pad or the MIM capacitor may be integrated into the MEMS device itself. The MIM capacitor ensures that a low resistance for the MEMS DVC is achieved.
Abstract:
The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent Cmax value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.
Abstract:
The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.