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    Semiconductor yaw rate sensor
    2.
    发明专利
    Semiconductor yaw rate sensor 未知

    公开(公告)号：DE19828606A1

    公开(公告)日：1999-01-07

    申请号：DE19828606

    申请日：1998-06-26

    Applicant: DENSO CORP

    Inventor： KANO KAZUHIKO ,  FUJITA MAKIKO ,  OHTSUKA YOSHINORI

    IPC: G01L1/18 ,  G01C19/56 ,  G01C19/5719 ,  G01P15/00 ,  G01P15/08 ,  G01P15/12 ,  G01P15/14 ,  H01L29/84 ,  G01P9/04 ,  G01B7/16 ,  H01L49/00

    Abstract: The sensor includes a substrate (1), and a movable structure (2,3) formed from a semiconductor material, and comprising at least one anchor part (4a-4d) arranged on the substrate, an weight part (7) arranged in a predetermined distance above the substrate, and at least one flexible part (5,6) which extends from the anchor part and carries the weight part. Movable electrodes (8,9) are formed on the weight part. A fixed electrode (10,12) is formed on the substrate in such way, that it lies opposite the movable electrode, whereby if a control voltage is applied at the movable electrode and the fixed electrode, the movable structure is forced to swing in a direction horizontally with respect to a substrate surface plane. A yaw rate detector (7,13) records a yaw rate based on a displacement of the structure in a direction vertically to the substrate surface plane during the forced oscillation of the structure. At least one extension measuring device (15,19) is formed in the flexible part and monitors the forced oscillation of the structure.

    3.
    发明专利
    未知

    公开(公告)号：DE4444149C2

    公开(公告)日：2003-06-05

    申请号：DE4444149

    申请日：1994-12-12

    Applicant: DENSO CORP

    Inventor： TAKEUCHI YUKIHIRO ,  SHIBATA KOZO ,  OHTSUKA YOSHINORI ,  KANO KAZUHIKO ,  YAMAMOTO TOSHIMASA

    IPC: G01P15/08 ,  B81B3/00 ,  B81C1/00 ,  G01C19/56 ,  G01C19/5719 ,  G01C19/5755 ,  G01C19/5769 ,  G01P15/14 ,  H01L29/84 ,  G01P9/04 ,  G01G19/56 ,  H01L49/00

    Abstract: A semiconductor yaw rate sensor, which can be structured easily by means of an IC fabrication process, such that a yaw rate detection signal due to a current value is obtained by means of a transistor structure and a method of producing the same is disclosed. A weight supported by beams is disposed at a specified interval from a surface of a semiconductor substrate, and movable electrodes and excitation electrodes are formed integrally with the weight. Fixed electrodes for excitation use are fixed to the substrate in correspondence to the excitation electrodes. Along with this, source electrodes as well as drain electrodes are formed by means of a diffusion layer on a surface of the substrate at positions opposing the movable electrodes, such that drain current changes in correspondence with displacement of the movable electrodes by means of Corioli's force due to yaw rate, and the yaw rate is detected by this current.

    4.
    发明专利
    未知

    公开(公告)号：DE19623072B4

    公开(公告)日：2006-07-27

    申请号：DE19623072

    申请日：1996-06-10

    Applicant: DENSO CORP

    Inventor： KANO KAZUHIKO ,  NARA KENICHI ,  YAMAMOTO TOSHIMASA ,  KATO NOBUYUKI ,  GOTOH YOSHITAKA ,  OHTSUKA YOSHINORI ,  AO KENICHI

    IPC: B81C1/00 ,  B81B3/00 ,  G01L1/22 ,  G01P15/08 ,  G01P15/125

    Abstract: A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween.

    Ring oscillator and pulse phase difference encoding circuit
    5.
    发明专利
    Ring oscillator and pulse phase difference encoding circuit 未知

    公开(公告)号：DE4447936B4

    公开(公告)日：2004-07-22

    申请号：DE4447936

    申请日：1994-01-13

    Applicant: DENSO CORP

    Inventor： YAMAUCHI SHIGENORI ,  WATANABE TAKAMOTO ,  OHTSUKA YOSHINORI

    IPC: G01R25/08 ,  H03K3/03 ,  H03K5/13 ,  H03K3/027

    Abstract: The oscillator and encoding circuit contains an integer number of inverting circuits connected together to form a ring. One inverting circuit contains an inverting starting circuit which begins the inversion of an input signal in response to an externally applied control signal. A control signal input device inputs the second control input during an interval between a first time at which the first control signal is input and a second time at which a pulse edge, which is generated at the start of the first inversion, enters the second inverting start circuit.

    7.
    发明专利
    未知

    公开(公告)号：DE4339190B4

    公开(公告)日：2006-04-13

    申请号：DE4339190

    申请日：1993-11-16

    Applicant: DENSO CORP

    Inventor： TAKEUCHI YUKIHIRO ,  YAMAMOTO TOSHIMASA ,  OHTSUKA YOSHINORI ,  AKITA SHIGEYUKI ,  HATTORI TADASHI ,  KANOU KAZUHIKO ,  IKEDA HIROTANE

    IPC: B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/12 ,  H01L21/306

    Abstract: This invention aims at providing a novel semiconductor accelerometer comprising a smaller number of substrates and a production method thereof. An insulating film is formed on a main plane of a P-type silicon substrate, and a beam-like movable electrode is formed on the insulating film. Fixed electrodes are then formed on both sides of the movable electrode in self-alignment with the movable electrode by diffusing an impurity into the P-type silicon substrate, and the insulating film below the movable electrode is etched and removed. There is thus produced a semiconductor accelerometer comprising the P-type silicon substrate 1, the movable electrode 4 having the beam structure and disposed above the P-type silicon substrate 1 with a predetermined gap between them, and the fixed electrodes 8, 9 consisting of the impurity diffusion layer and formed on both sides of the movable electrode 4 on the P-type silicon substrate 1 in self-alignment with the movable electrode 4. This sensor can detect acceleration from the change (increase/decrease) of a current between the fixed electrodes 8 and 9 resulting from the displacement of the movable electrode 4 due to acceleration.

    9.
    发明专利
    未知

    公开(公告)号：DE69320853T2

    公开(公告)日：1999-04-01

    申请号：DE69320853

    申请日：1993-03-15

    Applicant: DENSO CORP

    Inventor： WATANABE TAKAMOTO ,  OHTSUKA YOSHINORI ,  HATTORI TADASHI

    IPC: H03M1/06 ,  H03K3/03 ,  H03M1/14 ,  H03M1/50 ,  H03M1/64 ,  H03M1/12

    Abstract: A pulse circulating circuit includes inverting circuits each for inverting an input signal and outputting an inversion of the input signal. A time of signal inversion by each of the inverting circuits varies in accordance with a power supply voltage applied thereto. One of the inverting circuits constitutes an inverting circuit for starting which is controllable in inversion operation. The pulse circulating circuit circulates a pulse signal therethrough after the inverting circuit for starting starts to operate. An input terminal subjected to an analog voltage signal is connected to power supply lines of the respective inverting circuits for applying the analog voltage signal to the inverting circuits as a power supply voltage fed thereto. A counter serves to count a number of times of complete circulation of the pulse signal through the pulse circulating circuit. A circulation position detecting device serves to detect a circulation position of the pulse signal in the pulse circulating circuit on the basis of output signals of the respective inverting circuits. A control device is operative for activating the inverting circuit for starting and thereby starting pulse circulating operation of the pulse circulating circuit, and for activating the circulation position detecting means at a moment which follows a moment of starting pulse circulating operation by a given time. An output device is operative for outputting digital data as an A/D conversion result. The A/D conversion result data has lower bits composed of output digital data of the circulation position detecting device, and higher bits composed of output digital data of the counter.

    10.
    发明专利
    未知

    公开(公告)号：DE69320853D1

    公开(公告)日：1998-10-15

    申请号：DE69320853

    申请日：1993-03-15

    Applicant: DENSO CORP

    Inventor： WATANABE TAKAMOTO ,  OHTSUKA YOSHINORI ,  HATTORI TADASHI

    IPC: H03M1/06 ,  H03K3/03 ,  H03M1/14 ,  H03M1/50 ,  H03M1/64 ,  H03M1/12

    Abstract: A pulse circulating circuit includes inverting circuits each for inverting an input signal and outputting an inversion of the input signal. A time of signal inversion by each of the inverting circuits varies in accordance with a power supply voltage applied thereto. One of the inverting circuits constitutes an inverting circuit for starting which is controllable in inversion operation. The pulse circulating circuit circulates a pulse signal therethrough after the inverting circuit for starting starts to operate. An input terminal subjected to an analog voltage signal is connected to power supply lines of the respective inverting circuits for applying the analog voltage signal to the inverting circuits as a power supply voltage fed thereto. A counter serves to count a number of times of complete circulation of the pulse signal through the pulse circulating circuit. A circulation position detecting device serves to detect a circulation position of the pulse signal in the pulse circulating circuit on the basis of output signals of the respective inverting circuits. A control device is operative for activating the inverting circuit for starting and thereby starting pulse circulating operation of the pulse circulating circuit, and for activating the circulation position detecting means at a moment which follows a moment of starting pulse circulating operation by a given time. An output device is operative for outputting digital data as an A/D conversion result. The A/D conversion result data has lower bits composed of output digital data of the circulation position detecting device, and higher bits composed of output digital data of the counter.

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