公开(公告)号：EP0892169A4

公开(公告)日：2000-06-28

申请号：EP97912519

申请日：1997-11-19

Applicant: DENSO CORP

Inventor： YAMAGUCHI AKIHIDE ,  NOMURA YURIO ,  MIKAMI SYUYA ,  KAMEDA YASUTOSHI ,  NAKAYAMA TOSHIAKI ,  YAMAMOTO TAKAO

IPC: F02B27/02 ,  F02M15/06 ,  F02M35/024 ,  F02M35/10 ,  F02M35/12 ,  F02M35/14

CPC classification number: F02M35/10321 ,  F02B27/0215 ,  F02B27/0273 ,  F02M15/06 ,  F02M35/024 ,  F02M35/10039 ,  F02M35/10052 ,  F02M35/10111 ,  F02M35/10216 ,  F02M35/10268 ,  F02M35/10334 ,  F02M35/10347 ,  F02M35/10354 ,  F02M35/14 ,  F05C2225/08 ,  Y02T10/146

Abstract: The intake device includes an air filter (21) for filtrating air sucked into an engine (10), an intake manifold (100), for introducing the suction air into an intake port (10a) of the engine, and a main body casing (12) and a cap portion (13). The intake manifold, main casing and cap are made of resin. The air filter, the intake manifold and a fuel injection valve (40), are accommodated in the main casing and the cap portion. The cap portion and the main casing have a double-wall structure with inside (14,15) and outside (16,17) walls. The cavities (18,19) between the walls are filled with air for insulation.

公开(公告)号：DE112022001189T5

公开(公告)日：2023-12-07

申请号：DE112022001189

申请日：2022-02-09

Applicant: DENSO CORP

Inventor： FUKUDA YASUHISA ,  YANAGIDA ETSUGO ,  HOKUTO DAISUKE ,  YAMAMOTO TAKAO

IPC: G05G1/30 ,  G05G5/05

Abstract: Eine Pedalvorrichtung (1), die an einem Fahrzeug montiert ist, beinhaltet ein Gehäuse (10), eine Pedalauflage (30) und einen Reaktionskrafterzeugungsmechanismus (50, 501, 502). Das Gehäuse (10) ist an einer Fahrzeugkarosserie montiert. Die Pedalauflage (30) ist derart vorgesehen, dass diese in Hinblick auf das Gehäuse (10) drehbar ist. Der Reaktionskrafterzeugungsmechanismus (50, 501, 502) ist derart konfiguriert, dass dieser eine Mehrzahl von federnden Bauteilen beinhaltet, die jeweils eine vorgegebene Blattfeder (51) aufweisen. Der Reaktionskrafterzeugungsmechanismus ist bei der Pedalauflage (30) in einem Raum auf der Seite gegenüber einer Oberfläche angeordnet, auf die durch einen Fahrer getreten wird, um eine Reaktionskraft entgegen einer Tretkraft zu erzeugen, die durch den Fahrer auf die Pedalauflage (30) ausgeübt wird.

公开(公告)号：DE59707508D1

公开(公告)日：2002-07-18

申请号：DE59707508

申请日：1997-11-19

Applicant: DENSO CORP

Inventor： YAMAGUCHI AKIHIDE ,  NOMURA YURIO ,  MIKAMI SYUYA ,  KAMEDA YASUTOSHI ,  NAKAYAMA TOSHIAKI ,  YAMAMOTO TAKAO

IPC: F02B27/02 ,  F02M15/06 ,  F02M35/024 ,  F02M35/10 ,  F02M35/12 ,  F02M35/14

Abstract: The intake device includes an air filter (21) for filtrating air sucked into an engine (10), an intake manifold (100), for introducing the suction air into an intake port (10a) of the engine, and a main body casing (12) and a cap portion (13). The intake manifold, main casing and cap are made of resin. The air filter, the intake manifold and a fuel injection valve (40), are accommodated in the main casing and the cap portion. The cap portion and the main casing have a double-wall structure with inside (14,15) and outside (16,17) walls. The cavities (18,19) between the walls are filled with air for insulation.

公开(公告)号：DE102011080351A1

公开(公告)日：2012-06-28

申请号：DE102011080351

申请日：2011-08-03

Applicant: DENSO CORP

Inventor： YAMAMOTO TAKAO ,  TOKURA NORIHITO ,  KATO HISATO ,  NAKAGAWA AKIO

IPC: H01L29/861

Abstract: Eine Halbleitereinrichtung, die eine laterale Diode aufweist, umfasst eine Halbleiterschicht (1c, 1f, 1g), eine erste Halbleiterregion (2) in der Halbleiterschicht, eine Kontaktregion (4), die eine größere Verunreinigungskonzentration als die erste Halbleiterregion aufweist, eine zweite Halbleiterregion (6), die in der Halbleiterschicht angeordnet und von der Kontaktregion getrennt ist, eine erste Elektrode (10), die durch die Kontaktregion mit der ersten Halbleiterregion elektrisch verbunden ist, und eine zweite Elektrode (11), die mit der zweiten Halbleiterregion elektrisch verbunden ist. Die zweite Halbleiterregion weist einen Abschnitt (7) mit einer niedrigen Verunreinigungskonzentration, einen Abschnitt (8) mit einer hohen Verunreinigungskonzentration und einen Verlängerungsabschnitt (9) auf. Die zweite Elektrode bildet einen ohmschen Kontakt mit dem Abschnitt mit der hohen Verunreinigungskonzentration. Der Verlängerungsabschnitt weist eine Verunreinigungskonzentration auf, die größer ist als diejenige des Abschnitts mit der niedrigen Verunreinigungskonzentration, und erstreckt sich in einer Dickenrichtung der Halbleiterschicht.

公开(公告)号：JP2014225615A

公开(公告)日：2014-12-04

申请号：JP2013105137

申请日：2013-05-17

Applicant: 株式会社デンソー ,  Denso Corp

Inventor： YAMAMOTO TAKAO

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/739

Abstract: 【課題】簡易な構成で、低いオン電圧を維持しつつ、スイッチング時の負性容量の低減化を図ることが可能な半導体装置を提供する。【解決手段】半導体基板3の表面側に形成されるベース層7が、トレンチ20によって複数領域に分離されており、それら分離された領域は、エミッタ領域13を介してエミッタ電極17に接続されるチャネル領域7aと、エミッタ電極17に接続されないフローティング領域7bとして構成されている。そして、フローティング領域7bには、トレンチ20の他側壁面20bに沿ってN型のN+層25が形成されており、N+層25の一端部25aは、少なくともトレンチ20の底部20c寄りの位置まで到達するように設けられている。【選択図】図1

Abstract translation: 要解决的问题：提供一种具有简单结构的半导体器件，并且可以在保持低导通电压的同时降低开关时的负电容。解决方案：形成在半导体衬底的表面侧上的基极层7 3通过沟槽20分成多个区域。分割区域由通过发射极区域13连接到发射极电极17的通道区域7a和未连接到发射极电极17的浮置区域7b构成。在 浮动区域7b，N型N +层25沿着沟槽20的另一侧壁表面20b形成，并且N +层25的一端25a设置成至少到达靠近底部20c的位置 沟槽20。

公开(公告)号：JP2012087685A

公开(公告)日：2012-05-10

申请号：JP2010235309

申请日：2010-10-20

Applicant: Denso Corp ,  株式会社デンソー

Inventor： YAMAMOTO TAKAO

IPC: F02B39/00 ,  F02B37/00

CPC classification number: Y02T10/144

Abstract: PROBLEM TO BE SOLVED: To provide a turbocharger capable of efficiently recovering exhaust energy.SOLUTION: A turbine wheel 30 has a body part 31 and a blade part 32. The blade part 32 is constituted of a first blade 33 and a second blade 34 planarly extending from the body part 31 to the radial outside. The length of a first trailing edge 333 of the first blade 33 is L1 and the length of the second trailing edge 343 of the second blade 34 is L2, and so the L1 is different from the L2. Thus, choke due to an increase in the flow rate of exhaust gas can be inhibited. When the flow rate of the exhaust gas is small, the energy of the exhaust gas can be efficiently recovered, and when the flow rate of the exhaust gas is large, the flow disturbance of the exhaust gas can be inhibited.

Abstract translation: 要解决的问题：提供能够有效地回收排气能量的涡轮增压器。 涡轮机叶轮30具有主体部分31和叶片部分32.叶片部分32由从主体部分31平面地延伸到径向外侧的第一叶片33和第二叶片34构成。 第一叶片33的第一后缘333的长度为L1，第二叶片34的第二后缘343的长度为L2，因此L1与L2不同。 因此，可以抑制由于废气流量的增加引起的扼流圈。 当排气的流量小时，可以有效地回收废气的能量，并且当排气的流量大时，可以抑制废气的流动干扰。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012054532A

公开(公告)日：2012-03-15

申请号：JP2011118863

申请日：2011-05-27

Applicant: Denso Corp ,  株式会社デンソー

Inventor： YAMAMOTO TAKAO ,  TOKURA NORIHITO ,  KATO HISATO ,  NAKAGAWA AKIO

IPC: H01L29/861 ,  H01L21/329 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/08 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L29/868 ,  H01L27/0664 ,  H01L29/0615 ,  H01L29/0692 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/7394 ,  H01L29/7824

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device having a lateral diode capable of improving avalanche resistance while improving reverse recovery resistance by suppressing hole injection.SOLUTION: An anode electrode 11 is Schottky-contacted or ohmic-contacted to a p-type low-impurity-concentration region 7 and is ohmic-contacted to a p-type high-impurity-concentration region 8. A p-type anode expansion region 9 is provided on a side more distant from a cathode electrode 10 than the p-type low-impurity-concentration region 7 and the p-type high-impurity-concentration region 8. The electrical connection of the anode electrode 11 to the p-type low-impurity-concentration region 7 reduces electron injection, thereby reducing hole injection even if the same amount of current flows. As a result, the reverse recovery resistance can be improved by reducing a reverse recovery charge Qrr. Additionally, the provision of the p-type anode expansion region 9 can enhance the avalanche resistance.

Abstract translation: 要解决的问题：提供具有能够通过抑制空穴注入而提高反向恢复电阻的能够提高雪崩电阻的横向二极管的半导体器件。

解决方案：阳极11与p 型低杂质浓度区7肖特基接触或欧姆接触，并与p + 型高杂质浓度区域8.在更远离的一侧设置p + 型阳极膨胀区域9。 比p + / SP>型高杂质 - 浓度区域8.阳极电极11与p + 型阳极膨胀区域9可以增强雪崩阻力。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2009156185A

公开(公告)日：2009-07-16

申请号：JP2007336125

申请日：2007-12-27

Applicant: Denso Corp ,  株式会社デンソー

Inventor： SEKO TADASHI ,  YAMAMOTO TAKAO ,  NISHIO YOSHITAKA ,  NAKAYAMA TOSHIAKI

IPC: F02M35/12 ,  F02M35/10

Abstract: PROBLEM TO BE SOLVED: To inhibit generation of abnormal sound by preventing a protruding directions of respective bend portions 43, 44 of a root portion of a first, second polygon annular rib 7 provided at a second, fifth thin film portion 5 of an inner duct 4 from rapidly reversing. SOLUTION: In respective vibrating surfaces of a second, fifth thin film portion 5 provided at an inner duct (vibrating film) 4, a shape when seeing a first, second polygon annular rib 7, in particular, respective bend portions 43, 44 of a root portion of a second, fifth protrusion rib, from a perpendicular direction orthogonal to respective vibrating surfaces of the second, fifth thin film portion 5, is shaped to include protrusion portions 51, 52 protruding toward the outside from the both slant portions of the second, fifth protrusion rib. Alternatively, planar views of respective bend portions 45, 46 of the root portion of the first, second polygon annular rib 7 is waveform shaped extending meandering in wave shape in vertical direction substantially orthogonal to a plurality of first to sixth flexion portion 6. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：通过防止设置在第二，第五薄膜部分5的第一，第二多边形环形肋7的根部的各个弯曲部分43,44的突出方向来抑制异常声音的产生 内管4快速反转。 解决方案：在设置在内部管道（振动膜）4上的第二，第五薄膜部分5的各个振动表面中，当看到第一，第二多边形环形肋7，特别是各个弯曲部分43时的形状， 第二，第五突出肋的从与第二，第五薄膜部5的各个振动面正交的垂直方向的根部44的44形成为包括从两个倾斜部向外侧突出的突出部51,52 的第二突出肋。 或者，第一，第二多边形环形肋7的根部的各个弯曲部45,46的平面图是波形形状，在与多个第一至第六屈曲部6大致正交的垂直方向上以波浪形状延伸。

版权所有（C）2009，JPO＆INPIT

公开(公告)号：JPH11147266A

公开(公告)日：1999-06-02

申请号：JP31858797

申请日：1997-11-19

Applicant: DENSO CORP

Inventor： YAMAMOTO TAKAO ,  NOMURA YURIO ,  SENGOKU TAKEHIRO

IPC: B65D1/02 ,  B29C45/14 ,  B29C45/26 ,  B29C65/70 ,  B29D22/00 ,  B29D23/00 ,  F02M35/104

Abstract: PROBLEM TO BE SOLVED: To avoid the generation of an undercut shape part obstructing the demolding a molded resin from a mold and to simplify the mold, in producing a hollow product made of a resin having constitution integrally connecting a plurality of hollow tubular elements, by dividing a hollow tubular body into two divided elements to subject both elements to primary molded and subsequently integrally bonding two divided elements by secondary molding. SOLUTION: A connection part 251 connecting a plurality of hollow tubular elements mutually is formed on one divided element 240 among two divided elements 240, 241 obtained by dividing a hollow tubular member 24 in its axial direction and the flange part projected toward the outer periphery of the hollow tubular member 24 is formed only on the joining part of the other divided element and the joining part of one divided member is abutted on the inner peripheral side of the flange part of the other divided element to integrally bond both divided elements.

公开(公告)号：JP2013165381A

公开(公告)日：2013-08-22

申请号：JP2012027140

申请日：2012-02-10

Applicant: Denso Corp ,  株式会社デンソー

Inventor： YAMAMOTO TAKAO ,  KATO HISATO ,  KONDO YOSUKE

IPC: H03K17/16 ,  H02M1/08 ,  H03K17/695

Abstract: PROBLEM TO BE SOLVED: To reduce voltage fluctuation noise when one driving transistor is turned on while suppressing an increase in time to turn on the other driving transistor.SOLUTION: A gate drive circuit 5 for driving a driving transistor T2 includes a CMOS circuit 9 and a turn-off resistance R1. The CMOS circuit 9 feeds an on voltage for turning on the driving transistor T2 or an off voltage for turning it off between a gate and a source of the driving transistor T2 on the basis of a control signal Sb. The CMOS circuit 9 includes a turn-on transistor M1 adapted to be turned on to turn on the driving transistor T2, and a turn-off transistor M2 adapted to be turned on to turn it off. The turn-off resistance R1 is interposed in a conduction path extending from an output node N3 of the CMOS circuit 9 to the source of the driving transistor T2 via the turn-off transistor M2.

Abstract translation: 要解决的问题：为了减少一个驱动晶体管导通时的电压波动噪声，同时抑制导通另一个驱动晶体管的时间增加。解决方案：用于驱动驱动晶体管T2的栅极驱动电路5包括CMOS电路9和 关断电阻R1。 CMOS电路9基于控制信号Sb馈送用于导通驱动晶体管T2的导通电压或用于在驱动晶体管T2的栅极和源极之间切断驱动晶体管T2的截止电压。 CMOS电路9包括：导通晶体管M1，其导通以导通驱动晶体管T2;以及截止晶体管M2，其被导通以使其截止。 关断电阻R1插入从CMOS电路9的输出节点N3经由截止晶体管M2延伸到驱动晶体管T2的源极的导电路径。