Abstract:
PROBLEM TO BE SOLVED: To enable to obtain a temper proof coating film excellent in abrasion resistance, adhesivity and toughness and useful for electronic devices, etc., by coating a substrate with a specific coating composition and subsequently heating the coated substrate at a specific temperature. SOLUTION: This coating film is obtained by coating (A) a substrate such as an electronic device (concretely a silicon device, an optical electronic device, a photovoltanic cell, etc.) with (B) a coating composition comprising (B1 ) a preceramic material such as a silicon oxide precursor [e.g. a hydrogen silsesquioxane resin, a (partial) hydrolyzate of a compound of the formula: R n Si(OR )4-n (R is a 1-20C aliphatic, alicyclic or aromatic substituent; (n) is 0-3)], (B2 ) a flux material such as B2 O3 , PBO2 or P2 O5 , if necessary, (B3 ) a filler such as an inorganic filler and (B4 ) a solvent, and subsequently heating the coated substrate at a temperature (usually 50-1000 deg.C) sufficient to evaporate the component B4 , melt the component B2 and convert the component B1 into the ceramic coating film.
Abstract:
PROBLEM TO BE SOLVED: To provide an IC chip or a die suitable for testing a die which yet to be mounted. SOLUTION: An IC die is manufactured with high elasticity of ability, handling related to distribution, testing, and storage as a known good die(KGD). The IC device 30A is provided with a mechanically tough, chemically inert top layer to prevent damages. Contacts are formed of thin films enabling reversible electrical connections for KGD test. Particularly, the overall contact structure prevents the device from irreversible damages during the procedure for connection, testing and release.
Abstract:
PROBLEM TO BE SOLVED: To obtain a coating contg. an opaque material or a shielding material. SOLUTION: This method for forming a coating on an electronic device comprises the steps of: applying a coating compsn., comprising phosphoric anhydride and a preceramic silicon-contg. material selected from among (i) a silsesquioxane hydrogen resin, (ii) a hydrolyzed or partially hydrolyzed compd. represented by the formula Rn Si(OR)4-n (wherein Rs each independently represents a 1-20 C aliph. substituent group, a 3-20C alicyclic substituent group, or a 6-20C arom. substituent group; and (n) is an integer of 0 to 3), (iii) a hydridopolysilazane resin, (iv) methylpolydisilylazane, and (v) boron-modified hydropolysilazane, on the surface of an electronic device; and converting the coating compsn. to a ceramic SiO2 -contg. coating.
Abstract:
PROBLEM TO BE SOLVED: To provide a mullilayered film which can be used for hermetic protection and can enhance protection of an electronic device against illegal probing, inspection or invasion. SOLUTION: Hydrogenated silses quioxane resin (H resin) is first applied to a surface of an electronic device, and then the resin is heated to be converted to a ceramic layer containing silica. Then a silicon carbide film is formed on the first film by a chemical vapor deposition(CVD) process. Next, a third ceramic layer containing impermeable or opaque porous silica is formed on the silicon carbide film, the H resin is applied thereto and then heated to be converted to ceramic containing porous silica. Impregnated into the third layer containing porous silica is impermeable material or material containing a filling agent. A fourth layer is made of metal or alloy. Next, The fourth layer is covered with substantially the same fifth layer as the third ceramic layer containing opaque porous silica. However, the composition of the fifth opaque layer is preferably different from that of the third opaque layer.
Abstract:
PROBLEM TO BE SOLVED: To provide a coating resistant to wet etching. SOLUTION: A coating composition contg. an aq. alkanol dispersion of the partial condensate of colloidal silica and RSi(OH)3 (where R is selected from a group consisting of 1-3C alkyls, at least 70% of which is methyl, vinyl, 3,3,3- trifluoropropyl, γ-glycidoxypropyl and γ-methacryloxypropyl) is applied on an electronic substrate. The coated electronic substrate is heated at 200-1000 deg.C to convert the coating composition into a ceramic coating, and a ceramic coating is formed on the electron substrate.
Abstract:
PROBLEM TO BE SOLVED: To obtain a coating compsn. as a stable soln. capable of deposing a coating film having superior quality and an unexpected thickness on an electronic device by incorporating specified linear siloxane as a carrier fluid for a precursor of Si-contg. ceramic. SOLUTION: This coating compsn. contains 1-50wt.% precursor of Si-contg. ceramic and 50-99wt.% linear siloxane represented by the formula, R3 -(SiR2 -O)-R3 [where each of R1 -R3 is H, 1-6C alkyl, alkenyl or aryl and (n) is 1-6]. A coating film obtd. from this coating compsn. has high quality (e.g. purity and dielectric constant) and the desired thickness. Since this coating compsn. has a long shelf life even at room temp. and contains a small amt. of a volatile org. component, it has satisfactory fitness for a storage vessel and does not adversely affect the environment.
Abstract:
Disclosed are coating compositions which include a preceramic silicon-containing material dissolved in short chain linear siloxanes. These compositions surprisingly have a long shelf life and are useful for forming coatings which are thick and of good quality.
Abstract:
The present invention relates to a method of forming coatings on substrates and the substrates coated thereby. The method comprises applying a coating comprising hydrogen silsesquioxane resin and a filler on a substrate and heating the coated substrate at a temperature sufficient to convert the hydrogen silsesquioxane resin to a ceramic coating. This method is especially valuable for forming coatings on electronic devices.
Abstract:
This invention relates to integrated circuits which are protected from the environment. Such circuits are sealed by applying a non-corroding metal layer (4) to the bond pads (2) and a passivation layer (5) to the remainder of the circuit.