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    COATING CONTAINING SILICONE DIOXIDE
    2.
    发明专利
    COATING CONTAINING SILICONE DIOXIDE 失效

    公开(公告)号：JP2000104017A

    公开(公告)日：2000-04-11

    申请号：JP22194099

    申请日：1999-08-05

    Applicant: DOW CORNING

    Inventor： CHANDRA GRISH ,  HALUSKA LOREN ANDREW

    IPC: B05D5/00 ,  B05D3/02 ,  B05D7/24 ,  C09D183/16 ,  H01L21/316

    Abstract: PROBLEM TO BE SOLVED: To form a coating containing silicone dioxide without damaging a substrate by painting a coating composition containing a polysilastyrene on the substrate and then forming a coating containing silicone dioxide through heating in an oxidative atmosphere. SOLUTION: A coating composition is obtained by blending a polysilastyrene having the ratio of the silicone-bonding methyl group to the silicone-bonding phenyl group of 1:1-4:1, a ceramic oxide precursor for reforming, 1-96 wt.% of a filler, 0.01-10 wt.% of a silane coupling agent, 5-1,000 ppm of a catalyst, a flux and 20-99.1 wt.% of a solvent. A coating is formed by stenciling this coating composition on a substrate. Then polysilastyrene is melted and fluidized by heating to a temperature not lower than the melting point of polysilastyrene. Following that, a coating containing silicone dioxide having a thickness of 1-500 μm is formed by heating at 50-1,000 deg.C in an inert atmosphere.

    COATING FILM FOR ELECTRONIC DEVICE
    3.
    发明专利
    COATING FILM FOR ELECTRONIC DEVICE 失效

    公开(公告)号：JPH10130532A

    公开(公告)日：1998-05-19

    申请号：JP27167397

    申请日：1997-10-03

    Applicant: DOW CORNING

    Inventor： BEARINGER CLAYTON R ,  CAMILLETTI ROBERT CHARLES ,  HALUSKA LOREN ANDREW ,  MICHAEL KEITH WINTON

    IPC: C09D1/00 ,  C09D183/05 ,  H01L21/316 ,  H01L23/29 ,  H01L23/498

    Abstract: PROBLEM TO BE SOLVED: To enable to obtain a temper proof coating film excellent in abrasion resistance, adhesivity and toughness and useful for electronic devices, etc., by coating a substrate with a specific coating composition and subsequently heating the coated substrate at a specific temperature. SOLUTION: This coating film is obtained by coating (A) a substrate such as an electronic device (concretely a silicon device, an optical electronic device, a photovoltanic cell, etc.) with (B) a coating composition comprising (B1 ) a preceramic material such as a silicon oxide precursor [e.g. a hydrogen silsesquioxane resin, a (partial) hydrolyzate of a compound of the formula: R n Si(OR )4-n (R is a 1-20C aliphatic, alicyclic or aromatic substituent; (n) is 0-3)], (B2 ) a flux material such as B2 O3 , PBO2 or P2 O5 , if necessary, (B3 ) a filler such as an inorganic filler and (B4 ) a solvent, and subsequently heating the coated substrate at a temperature (usually 50-1000 deg.C) sufficient to evaporate the component B4 , melt the component B2 and convert the component B1 into the ceramic coating film.

    METHOD FOR FORMING PROTECTIVE FILM ON ELECTRONIC DEVICE
    5.
    发明专利
    METHOD FOR FORMING PROTECTIVE FILM ON ELECTRONIC DEVICE 失效

    公开(公告)号：JPH10107024A

    公开(公告)日：1998-04-24

    申请号：JP14760297

    申请日：1997-06-05

    Applicant: DOW CORNING

    Inventor： CAMILLETTI ROBERT CHARLES ,  HALUSKA LOREN ANDREW ,  MICHAEL KEITH WINTON

    IPC: C04B41/90 ,  C08G77/12 ,  C23C16/42 ,  C23C28/04 ,  C30B29/36 ,  H01L21/312 ,  H01L21/314 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L23/58

    Abstract: PROBLEM TO BE SOLVED: To provide a mullilayered film which can be used for hermetic protection and can enhance protection of an electronic device against illegal probing, inspection or invasion. SOLUTION: Hydrogenated silses quioxane resin (H resin) is first applied to a surface of an electronic device, and then the resin is heated to be converted to a ceramic layer containing silica. Then a silicon carbide film is formed on the first film by a chemical vapor deposition(CVD) process. Next, a third ceramic layer containing impermeable or opaque porous silica is formed on the silicon carbide film, the H resin is applied thereto and then heated to be converted to ceramic containing porous silica. Impregnated into the third layer containing porous silica is impermeable material or material containing a filling agent. A fourth layer is made of metal or alloy. Next, The fourth layer is covered with substantially the same fifth layer as the third ceramic layer containing opaque porous silica. However, the composition of the fifth opaque layer is preferably different from that of the third opaque layer.

    7.
    发明专利
    未知

    公开(公告)号：DE69709597D1

    公开(公告)日：2002-02-21

    申请号：DE69709597

    申请日：1997-09-25

    Applicant: DOW CORNING

    Inventor： CAMILETTI ROBERT CHARLES ,  HALUSKA LOREN ANDREW ,  MICHAEL KEITH WINTON

    IPC: C04B41/50 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C23C26/00 ,  C23C24/08 ,  H01L21/316 ,  H01L21/48 ,  H01L23/498 ,  H01L23/28

    Abstract: This invention pertains to a method of forming a coating on an electronic substrate and to the electronic substrates coated thereby. The method comprises applying on the electronic substrate a coating composition comprising an aqueous alkanol dispersion of colloidal silica and partial condensate of RSi(OH)3 where R is selected from the group consisting of an alkyl radical having from 1 to 3 carbon atoms, the vinyl radical, the 3,3,3-trifluoropropyl radical, the gamma-glycidoxypropyl radical and the gamma-methacryloxypropyl radical with the provision that at least 70% of the R radicals are methyl and thereafter ceramifying the coating by heating at a temperature of 200 to 1000 DEG C. The use of the coating composition comprising an aqueous alkanol dispersion of colloidal silica and partial condensate of RSi(OH)3 allows for the formation of thick planarizing coatings on the electronic substrate. This invention also pertains to thick opaque ceramic coatings which are used to protect delicate microelectronic devices against excited energy sources, radiation, light, abrasion and wet etching techniques. The thick opaque ceramic coating are prepared from a mixture containing tungsten carbide (WC), tungsten metal (W) and phosphoric anhydride, i.e., phosphorous pentoxide (P2O5), carried in an aqueous alkanol dispersion of colloidal silica and partial condensate of methylsilanetriol. The coating is pyrolyzed to form a ceramic SiO2 containing coating.

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