公开(公告)号：DE69100590D1

公开(公告)日：1993-12-09

申请号：DE69100590

申请日：1991-11-13

Applicant: DOW CORNING

Inventor： HANNEMAN LARRY FRAZIER ,  GENTLE THERESA EILEEN ,  SHARP KENNETH GEORGE

IPC: C04B35/571 ,  C04B41/45 ,  C08G77/12 ,  C08G77/22 ,  C08G77/32 ,  C08L83/04 ,  C08L83/05 ,  C09D183/04 ,  C09D183/05 ,  H01L21/312 ,  H01L21/316 ,  H01L21/48 ,  C08G77/36 ,  C04B41/50 ,  C04B35/00

Abstract: The present invention relates to hydrogen silsesquioxane resin (H-resin) fractions derived from an extraction process using one or more fluids at, near or above their critical state. These fractions can comprise narrow molecular weight fractions with a dispersity less than about 3.0 or fractions useful for applying coatings on substrates. The invention also relates to a method of using these fractions for forming ceramic coatings on substrates.

公开(公告)号：DE3782605D1

公开(公告)日：1992-12-17

申请号：DE3782605

申请日：1987-10-02

Applicant: DOW CORNING

Inventor： SHARP KENNETH GEORGE

IPC: H01L31/04 ,  C23C16/24 ,  C23C16/30 ,  H01L21/205 ,  H01L31/20 ,  H01L31/18

Abstract: The invention relates to the chemical vapor deposition of dihalogenated silanes to form stable, abrasion resistant, photoconductive, dopable semiconductor amorphous films on substrates. Additional hydrogen and plasma discharge conditions are not necessary to practice the invention.

公开(公告)号：DE3485699D1

公开(公告)日：1992-06-11

申请号：DE3485699

申请日：1984-10-19

Applicant: DOW CORNING

Inventor： SHARP KENNETH GEORGE ,  STARK LESLIE DIANE ,  CHU HSIEN-KUN

IPC: C01B33/107 ,  C23C16/24 ,  H01L21/205

Abstract: There is described herein a method of forming amorphous polymeric halosilane films by decomposition on a substrate of bromo-, chloro-, fluoro-, di- or polysilanes at a temperature of between about 250 DEG C and 550 DEG C. As an example, hexafluorodisilane was decomposed at 350 DEG C for 45 minutes and formed a gold lightly reflective film on a glass substrate. The films so formed may have application as solar cells, thin film transistors, optical data storage media and scratch resistant coatings.

公开(公告)号：AU569336B2

公开(公告)日：1988-01-28

申请号：AU3484484

申请日：1984-10-30

Applicant: DOW CORNING

Inventor： SHARP KENNETH GEORGE ,  START LESLIE DIANE ,  CHU HSIEN-KUN

IPC: C01B33/107 ,  C23C16/24 ,  H01L21/205 ,  C03C17/30 ,  G02B1/10

Abstract: There is described herein a method of forming amorphous polymeric halosilane films by decomposition on a substrate of bromo-, chloro-, fluoro-, di- or polysilanes at a temperature of between about 250 DEG C and 550 DEG C. As an example, hexafluorodisilane was decomposed at 350 DEG C for 45 minutes and formed a gold lightly reflective film on a glass substrate. The films so formed may have application as solar cells, thin film transistors, optical data storage media and scratch resistant coatings.

公开(公告)号：ES2047987T3

公开(公告)日：1994-03-01

申请号：ES91310448

申请日：1991-11-13

Applicant: DOW CORNING

Inventor： HANNEMAN LARRY FRAZIER ,  GENTLE THERESA EILEEN ,  SHARP KENNETH GEORGE

IPC: C04B35/571 ,  C04B41/45 ,  C08G77/12 ,  C08G77/22 ,  C08G77/32 ,  C08L83/04 ,  C08L83/05 ,  C09D183/04 ,  C09D183/05 ,  H01L21/312 ,  H01L21/316 ,  H01L21/48 ,  C08G77/36 ,  C04B41/50 ,  C04B35/00

Abstract: The present invention relates to hydrogen silsesquioxane resin (H-resin) fractions derived from an extraction process using one or more fluids at, near or above their critical state. These fractions can comprise narrow molecular weight fractions with a dispersity less than about 3.0 or fractions useful for applying coatings on substrates. The invention also relates to a method of using these fractions for forming ceramic coatings on substrates.

公开(公告)号：AU610153B2

公开(公告)日：1991-05-16

申请号：AU1476488

申请日：1988-04-19

Applicant: DOW CORNING

Inventor： SHARP KENNETH GEORGE ,  ERRICO JOHN JOSEPH D

IPC: C23C16/42 ,  C23C16/24 ,  H01L21/205 ,  H01L31/04 ,  H01L21/18 ,  G03G5/082

Abstract: The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

公开(公告)号：AU5310990A

公开(公告)日：1990-10-18

申请号：AU5310990

申请日：1990-04-11

Applicant: DOW CORNING

Inventor： SHARP KENNETH GEORGE ,  TARHAY LEO

IPC: C01B31/36 ,  C23C16/32 ,  C23C16/511 ,  H01L21/205 ,  H01L21/314 ,  H01G4/06 ,  B32B15/02 ,  B32B15/04 ,  H05K3/46

Abstract: The invention is a method of forming a continuous coating of amorphous silicon carbide on the surface of articles by plasma enhanced chemical vapor deposition. In the method, the chemical vapor comprises a silicon-containing cyclobutane, such as a silacyclobutane or a 1,3-disilacyclobutane. The coatings formed by the invention are useful for application to solar cells, for preventing corrosion of electronic devices, for forming interlevel dielectric layers between metallization layers of electronic devices and for providing abrasion resistance to surfaces.

公开(公告)号：BR8801912A

公开(公告)日：1989-01-03

申请号：BR8801912

申请日：1988-04-21

Applicant: DOW CORNING

Inventor： SHARP KENNETH GEORGE ,  ERRICO JOHN JOSEPH D

IPC: C23C16/42 ,  C23C16/24 ,  H01L21/205 ,  H01L31/04 ,  C03C17/22

Abstract: The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

公开(公告)号：AU1476488A

公开(公告)日：1988-12-22

申请号：AU1476488

申请日：1988-04-19

Applicant: DOW CORNING

Inventor： SHARP KENNETH GEORGE ,  ERRICO JOHN JOSEPH D

IPC: C23C16/42 ,  C23C16/24 ,  H01L21/205 ,  H01L31/04 ,  H01L21/18 ,  G03G5/082

Abstract: The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

公开(公告)号：DE3782605T2

公开(公告)日：1993-05-13

申请号：DE3782605

申请日：1987-10-02

Applicant: DOW CORNING

Inventor： SHARP KENNETH GEORGE

IPC: H01L31/04 ,  C23C16/24 ,  C23C16/30 ,  H01L21/205 ,  H01L31/20 ,  H01L31/18

Abstract: The invention relates to the chemical vapor deposition of dihalogenated silanes to form stable, abrasion resistant, photoconductive, dopable semiconductor amorphous films on substrates. Additional hydrogen and plasma discharge conditions are not necessary to practice the invention.