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公开(公告)号:DE69232607T2
公开(公告)日:2002-12-05
申请号:DE69232607
申请日:1992-06-02
Applicant: DOW CORNING
IPC: B05D3/02 , B05D7/24 , C04B41/50 , C23C18/12 , H01L21/312 , H01L21/316
Abstract: The present invention relates to a method of forming a silica coating on a substrate. The method comprises coating a substrate with a silica precursor having a melting point between about 50 and about 450 DEG C. The coating is heated to a temperature above its melting point in an inert environment to allow the coating to melt and flow. The melted coating is then heated in an environment which facilitates conversion to silica for a time sufficient to convert it to silica.
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公开(公告)号:DE69525101D1
公开(公告)日:2002-03-14
申请号:DE69525101
申请日:1995-05-01
Applicant: DOW CORNING
Inventor: GENTLE THERESA EILEEN , LUTZ MICHAEL ANDREW
IPC: C08K5/5415 , C08K5/5419 , C08K5/5425 , C08L83/04 , C08L83/07 , C08K5/54
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公开(公告)号:DE69512307D1
公开(公告)日:1999-10-28
申请号:DE69512307
申请日:1995-05-01
Applicant: DOW CORNING
Inventor: GENTLE THERESA EILEEN , LUTZ MICHAEL ANDREW
Abstract: A curable organosiloxane compsn. comprises: (A) a curable polyorganosiloxane; (B) a curing agent; (C) a cure promoter; and (D) an adhesion-promoter effective during curing at below 100[deg]C., comprising: (I) a first liq. organo-Si cpd. of formula (R1O)aSi(OR2)4-a or R3(OSi(OR2)3)2; and (II) a second liq. organo-Si cpd. from; (1) organosilanes in which the Si is bonded to (a) >= one alkoxy, enoloxy or silanol gp. or (b) >= one Si-bonded H or ethylenically-unsatd. gp. bonded to Si via C that will participate in a hydrosilation reaction; and (2) organosiloxanes comprising (a) units of formula R11dR12eSiO(4-d-e)/2, and (b) units contg. >=one Si-bonded alkoxy, enoloxy or silanol gp.; the alkoxy gps. contg. 1-4C; the enoloxy gps.contg. 3-8C. In the formulae, R1 = CH2C(R4)CH2R8-; CH2=C(R4)R5OR6-; (CH2=C(R4)R5O)bR9-; (CH2=C(R4))bR9-; CH2=C(R4)R8C(O)OR6-; CH2=C(R4)R8OC(O)OR6- and CH2 =C(R4)R5OC(O)R7-; R2 = 1-4C alkyl, or 1-alkenyl and 1-cycloalkenyl radials; R3 = divalent radical from CH2C(R4)R10=; CH2=C(R4)R5OR10=; CH2-C(R4)R8c(O)OR10=; CH2-C(R4)R8OC(O)OR10=; and CH2=c(R4)R5OC(O)R10=; R4 = H or alkyl; R5 = hydrocarbylene radical; R6 = R5, with the proviso that R6 contains >= 2C; R7 = R5; R8 = single bond or R5; R9 = hydrocarbon radicals with a valence of b+1; R10 = trivalent hydrocarbon radical; R11 = H or unsatd. gp.bonded to Si via C and capable of undergoing hydrosilation; R12 = monovalent hydrocarbon radical; a = 1,2, or 3; b = 2 or 3; d = 0, 1 2 or 3; and e = 0, 1 or 2; with the proviso that the d+e does not exceed 3. The compsn. is cured using a reaction from: (i) hydrolysation reaction catalysed by Pt gp. metals and cpds.; (ii) reactions of Si-bonded H with silanol gps.; and (iii) free radical reactions initiated by the decompsn. of a photolytically unstable cpd.
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公开(公告)号:DE69117353D1
公开(公告)日:1996-04-04
申请号:DE69117353
申请日:1991-05-31
Applicant: DOW CORNING
Inventor: CHANDRA GRISH , GENTLE THERESA EILEEN
IPC: C08J7/04 , C09D183/00 , C09D183/02 , C23C18/12 , H01L21/312 , H01L21/314 , B05D3/06 , H01L21/316 , H01L21/56 , C04B41/50 , C08J3/28
Abstract: The present invention is based on the discovery that rapid thermal processing (RTP) can convert hydrogen silsesquioxane resin coatings to ceramic silica coatings. This technique is especially valuable for the application of protective and dielectric layers on electronic devices.
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公开(公告)号:DE69517773T2
公开(公告)日:2000-11-30
申请号:DE69517773
申请日:1995-11-24
Applicant: DOW CORNING
Inventor: GENTLE THERESA EILEEN , LUTZ MICHAEL ANDREW
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公开(公告)号:DE69606942D1
公开(公告)日:2000-04-13
申请号:DE69606942
申请日:1996-08-27
Applicant: DOW CORNING
Inventor: BEARINGER CLAYTON R , CAMILLETTI ROBERT CHARLES , CHANDRA GRISH , HALUSKA LOREN ANDREW , GENTLE THERESA EILEEN
IPC: H05K7/12 , C09J5/02 , C09J5/06 , H01L21/58 , C09J183/16 , H01L23/498
Abstract: A method of adhering an electronic component to a substrate in which a layer of a preceramic polymer is applied between the electronic component and the substrate to which it is to be adhered followed by heating to convert the preceramic polymer into a ceramic. The method forms a strong bond which is not affected by the environment. The method is valuable for adhering integrated circuit chips to carriers or circuit boards.
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公开(公告)号:AU4091996A
公开(公告)日:1996-07-18
申请号:AU4091996
申请日:1996-01-10
Applicant: DOW CORNING
Inventor: GENTLE THERESA EILEEN , LUTZ MICHAEL ANDREW
IPC: C07F7/02 , A61K8/58 , A61K8/89 , A61Q1/00 , A61Q1/12 , A61Q15/00 , A61Q17/04 , A61Q19/10 , C07F7/08 , C07F7/18 , C08G77/04 , C08G77/12 , C08G77/20 , C08G77/22 , C08G77/50 , C08K5/5419 , C08L83/04 , H05K3/28 , C08G77/18 , C08G77/26 , C08G77/28
Abstract: An organosiloxane cpd. has the formula XmR2(3-m)SiOR1(Si(R3)3)n (I) where R1 contains at least 3C, has a valence of n+1 and is selected from -R4;, -R4OR5-, -R4OC(O)R6-, -R7C(O)OR5- when n = 1 and from (-R4O)2R8- when n = 2; R5, R6, R8 are bonded to the oxygen in the formula; R4, R6 = hydrocarbylene radical contg. at least 3C opt. substd. by hydroxyl or alkoxy; R5 = 2-12C hydrocarbylene or alkoxy-substd. hydrocarbylene radical; R7 = as R6 or a single bond; R8 = trivalent hydrocarbon radical; R2 = opt. substd. monovalent hydrocarbon radical; R3 = opt. monovalent hydrocarbon radical, silicon bonded H atom, X or siloxane units of formula -O(SiR9pO(3-p)/2)q (II), q = at least 1, the siloxane units being sequential when q is greater than 1; R9 = X, H, opt. substd. monovalent hydrocarbon radicals, XmR23-mSiOR1- (III) or -R11(R10sSiO(3-s)/2)r (IV); r = at least 1 and the siloxane units (R10sSiO(3-s)/2)r are sequential when r is greater than 1; with the proviso that at least one substit. R3 contains a Si-bonded H atom or alkenyl radical; R10 = monovalent hydrocarbon radical, H or X; R11 = hydrocarbylene radical contg. at least 2C opt. substd. by hydroxyl or alkoxy; the substits. present on the substd. hydrocarbon radicals represented by R2, R3, R9, R10 and R11 are selected from halogen, epoxy, amino, mercapto and 3-methacryloxpropyl; X = hydrolysable gp.; m = 2 or 3; n = 1 or 2; and p, s = 0, 1, 2 or 3.
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公开(公告)号:DE69100590T2
公开(公告)日:1994-05-11
申请号:DE69100590
申请日:1991-11-13
Applicant: DOW CORNING
Inventor: HANNEMAN LARRY FRAZIER , GENTLE THERESA EILEEN , SHARP KENNETH GEORGE
IPC: C04B35/571 , C04B41/45 , C08G77/12 , C08G77/22 , C08G77/32 , C08L83/04 , C08L83/05 , C09D183/04 , C09D183/05 , H01L21/312 , H01L21/316 , H01L21/48 , C08G77/36 , C04B41/50 , C04B35/00
Abstract: The present invention relates to hydrogen silsesquioxane resin (H-resin) fractions derived from an extraction process using one or more fluids at, near or above their critical state. These fractions can comprise narrow molecular weight fractions with a dispersity less than about 3.0 or fractions useful for applying coatings on substrates. The invention also relates to a method of using these fractions for forming ceramic coatings on substrates.
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公开(公告)号:ES2176184T3
公开(公告)日:2002-12-01
申请号:ES92305028
申请日:1992-06-02
Applicant: DOW CORNING
IPC: B05D3/02 , B05D7/24 , C04B41/50 , C23C18/12 , H01L21/312 , H01L21/316
Abstract: The present invention relates to a method of forming a silica coating on a substrate. The method comprises coating a substrate with a silica precursor having a melting point between about 50 and about 450 DEG C. The coating is heated to a temperature above its melting point in an inert environment to allow the coating to melt and flow. The melted coating is then heated in an environment which facilitates conversion to silica for a time sufficient to convert it to silica.
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公开(公告)号:DE69606942T2
公开(公告)日:2000-10-05
申请号:DE69606942
申请日:1996-08-27
Applicant: DOW CORNING
Inventor: BEARINGER CLAYTON R , CAMILLETTI ROBERT CHARLES , CHANDRA GRISH , HALUSKA LOREN ANDREW , GENTLE THERESA EILEEN
IPC: H05K7/12 , C09J5/02 , C09J5/06 , H01L21/58 , C09J183/16 , H01L23/498
Abstract: A method of adhering an electronic component to a substrate in which a layer of a preceramic polymer is applied between the electronic component and the substrate to which it is to be adhered followed by heating to convert the preceramic polymer into a ceramic. The method forms a strong bond which is not affected by the environment. The method is valuable for adhering integrated circuit chips to carriers or circuit boards.
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