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    Device for improving negative potential immunity of an integrated circuit
    1.
    发明公开
    Device for improving negative potential immunity of an integrated circuit 审中-公开
    设备，用于减少对负的电位的集成电路的易感性

    公开(公告)号：EP1713127A2

    公开(公告)日：2006-10-18

    申请号：EP06075748.1

    申请日：2006-03-30

    Applicant: Delphi Technologies, Inc.

    Inventor： Glenn, Jack L. ,  Clear, Troy D. ,  Gose, Mark W.

    IPC: H01L29/06 ,  H01L29/78

    CPC classification number: H01L29/7809 ,  H01L27/0722 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/7815 ,  H01L29/7816 ,  H01L29/7826 ,  H03K17/0822

    Abstract: An integrated circuit (IC) (200) with negative potential protection includes at least one double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket (108), which is formed in a second-type substrate (110). The IC (200) also includes a second-type+ isolation ring (110A) formed in the substrate (110) to isolate the first-type epitaxial pocket (108) and a first-type+ ring (114) formed through the first-type epitaxial pocket (108) between the second-type+ isolation ring (110A) and the DMOS cell.

    Abstract translation: 一种集成电路（IC）（200）与负电位保护包括至少一个双扩散金属氧化物半导体（DMOS）在第一型外延口袋（108）形成的细胞，其在第二类型的基体构成（ 110）。 因此，IC（200）包括在所述基板形成的第二型+隔离环（110A）（110）至所述第一型外延袋（108）和通过所述第一型外延形成的第一型+环（114）隔离 第二类型+隔离环（110A）和所述DMOS细胞之间口袋（108）。

    Protection device for handling energy transients
    4.
    发明公开
    Protection device for handling energy transients 审中-公开
    Schutzvorrichtung zum Ableiten von Energietransienten

    公开(公告)号：EP1703561A2

    公开(公告)日：2006-09-20

    申请号：EP06075470.2

    申请日：2006-03-01

    Applicant: Delphi Technologies, Inc.

    Inventor： Glenn, Jack L. ,  Clear, Troy D. ,  Gose, Mark W. ,  Dikeman, John M.

    IPC: H01L27/102 ,  H02H9/04 ,  H01L29/866

    CPC classification number: H01L29/0638 ,  H01L24/05 ,  H01L27/0255 ,  H01L27/0814 ,  H01L29/866 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12035 ,  H01L2924/13091 ,  H01L2924/00

    Abstract: A protection device (400) for handling energy transients includes a plurality of basic unit Zener diodes (109) connected in series to achieve a desired breakdown voltage. Each of the basic unit Zener diodes (109) is formed in a first-type substrate (102). Each of the basic unit Zener diodes (109) comprises a second-type well (104) formed in the substrate (102), a second-type Zener region (110) formed in the second-type well (104) and a first-type+ region (112) formed over the second-type Zener region (110) between a first and second second-type+ region (108).

    Abstract translation: 用于处理能量瞬变的保护装置（400）包括串联连接以实现期望的击穿电压的多个基本单位齐纳二极管（109）。 基本单元齐纳二极管（109）中的每一个形成在第一类型的基板（102）中。 每个基本单位齐纳二极管（109）包括形成在衬底（102）中的第二类型阱（104），形成在第二类型阱（104）中的第二类型齐纳一个区域（110） 类型+区域（112）形成在第一和第二第二类型+区域（108）之间的第二类型齐纳一个区域（110）上。

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