Abstract:
An integrated circuit (IC) (200) with negative potential protection includes a switch (M1), a gate drive circuit (GD) and a comparator (CMP1). The switch (M1) includes a double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket (108), which is formed in a second-type substrate (110). The switch (M1) also includes a second-type+ isolation ring (110A) formed in the substrate (110) to isolate the first-type epitaxial pocket (108). An output of the gate drive circuit (GD) is coupled across a gate and a source of the switch (M1). An output of the comparator (CMP1) is coupled to a second input of the gate drive circuit (GD) and a first input of the comparator (CMP1) receives a reference signal. A second input of the comparator (CMP1) is coupled to the epitaxial pocket (108). The comparator (CMP1) provides a turn-on signal that causes the switch (M1) to conduct current, when a signal at the second input of the comparator (CMP1) is below the reference signal.
Abstract:
A liquid metal rotary connector (16) for a vehicle steering mechanism (10) utilizes a conductive alloy comprising Gallium, Indium, Tin and Zinc to electrically couple stationary and rotary terminals (26a, 26b; 28a, 28b) of the connector (16). The alloy is a liquid at ambient temperatures, and has a melting point of -36°C, though testing has shown that it operates satisfactorily at temperatures as low as -40°C. In a preferred arrangement, the rotary connector (16) provides a two-wire connection through which power is supplied from the steering column (12) to the steering wheel (14), and electronic modules (22, 24) located in the steering column (12) and the steering wheel (14) support bi-directional data communication through voltage and current modulation of the supplied power.
Abstract:
An integrated driver (200) with improved load current sense capability includes a first transistor (M1), a first amplifier (OA1), a second transistor (M3), a third transistor (M2), a second amplifier (OA2) and a fourth transistor (M4). The integrated driver (200) allows for significantly better fault handling capability, provides accurate thermal and current sensing capability and reduces I/O pin count over prior designs.
Abstract:
An integrated driver (200) with improved load current sense capability includes a first transistor (M1), a first amplifier (OA1), a second transistor (M3), a third transistor (M2), a second amplifier (OA2) and a fourth transistor (M4). The integrated driver (200) allows for significantly better fault handling capability, provides accurate thermal and current sensing capability and reduces I/O pin count over prior designs.
Abstract:
A protection device (400) for handling energy transients includes a plurality of basic unit Zener diodes (109) connected in series to achieve a desired breakdown voltage. Each of the basic unit Zener diodes (109) is formed in a first-type substrate (102). Each of the basic unit Zener diodes (109) comprises a second-type well (104) formed in the substrate (102), a second-type Zener region (110) formed in the second-type well (104) and a first-type+ region (112) formed over the second-type Zener region (110) between a first and second second-type+ region (108).
Abstract:
An integrated circuit (IC) (200) with negative potential protection includes at least one double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket (108), which is formed in a second-type substrate (110). The IC (200) also includes a second-type+ isolation ring (110A) formed in the substrate (110) to isolate the first-type epitaxial pocket (108) and a first-type+ ring (114) formed through the first-type epitaxial pocket (108) between the second-type+ isolation ring (110A) and the DMOS cell.
Abstract:
A protection device (400) for handling energy transients includes a plurality of basic unit Zener diodes (109) connected in series to achieve a desired breakdown voltage. Each of the basic unit Zener diodes (109) is formed in a first-type substrate (102). Each of the basic unit Zener diodes (109) comprises a second-type well (104) formed in the substrate (102), a second-type Zener region (110) formed in the second-type well (104) and a first-type+ region (112) formed over the second-type Zener region (110) between a first and second second-type+ region (108).
Abstract:
An integrated circuit (IC) (200) with negative potential protection includes a switch (M1), a gate drive circuit (GD) and a comparator (CMP1). The switch (M1) includes a double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket (108), which is formed in a second-type substrate (110). The switch (M1) also includes a second-type+ isolation ring (110A) formed in the substrate (110) to isolate the first-type epitaxial pocket (108). An output of the gate drive circuit (GD) is coupled across a gate and a source of the switch (M1). An output of the comparator (CMP1) is coupled to a second input of the gate drive circuit (GD) and a first input of the comparator (CMP1) receives a reference signal. A second input of the comparator (CMP1) is coupled to the epitaxial pocket (108). The comparator (CMP1) provides a turn-on signal that causes the switch (M1) to conduct current, when a signal at the second input of the comparator (CMP1) is below the reference signal.