Integrated circuit having negative potential protection
    1.
    发明公开
    Integrated circuit having negative potential protection 审中-公开
    与对潜在的负面保护集成电路

    公开(公告)号:EP1780793A3

    公开(公告)日:2008-05-28

    申请号:EP06076874.4

    申请日:2006-10-12

    CPC classification number: H03K17/0822 H01L29/7816

    Abstract: An integrated circuit (IC) (200) with negative potential protection includes a switch (M1), a gate drive circuit (GD) and a comparator (CMP1). The switch (M1) includes a double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket (108), which is formed in a second-type substrate (110). The switch (M1) also includes a second-type+ isolation ring (110A) formed in the substrate (110) to isolate the first-type epitaxial pocket (108). An output of the gate drive circuit (GD) is coupled across a gate and a source of the switch (M1). An output of the comparator (CMP1) is coupled to a second input of the gate drive circuit (GD) and a first input of the comparator (CMP1) receives a reference signal. A second input of the comparator (CMP1) is coupled to the epitaxial pocket (108). The comparator (CMP1) provides a turn-on signal that causes the switch (M1) to conduct current, when a signal at the second input of the comparator (CMP1) is below the reference signal.

    Liquid metal rotary connector apparatus for a vehicle steering wheel and column
    2.
    发明公开
    Liquid metal rotary connector apparatus for a vehicle steering wheel and column 有权
    与液态金属的旋转连接器用于方向盘和车辆的转向柱

    公开(公告)号:EP2275309A1

    公开(公告)日:2011-01-19

    申请号:EP10167130.3

    申请日:2010-06-24

    CPC classification number: H01R39/646 B60R16/027 C22C28/00 H01R2201/26

    Abstract: A liquid metal rotary connector (16) for a vehicle steering mechanism (10) utilizes a conductive alloy comprising Gallium, Indium, Tin and Zinc to electrically couple stationary and rotary terminals (26a, 26b; 28a, 28b) of the connector (16). The alloy is a liquid at ambient temperatures, and has a melting point of -36°C, though testing has shown that it operates satisfactorily at temperatures as low as -40°C. In a preferred arrangement, the rotary connector (16) provides a two-wire connection through which power is supplied from the steering column (12) to the steering wheel (14), and electronic modules (22, 24) located in the steering column (12) and the steering wheel (14) support bi-directional data communication through voltage and current modulation of the supplied power.

    Abstract translation: 一种用于车辆的转向机构(10)的液体金属旋转连接器(16)利用导电性合金包括镓,铟,锡和锌以电耦合固定和旋转端子(26A,26B; 28A,28B)的连接器(16)的 , 该合金是在环境温度下是液体,并具有-36℃的熔点,尽管测试已经显示它并在温度低到-40℃的满意地工作 在一个优选的布置中,旋转连接器(16)提供,通过该动力从转向柱(12)提供一个两线连接到位于转向柱的方向盘(14)和电子模块(22,24) (12)与方向盘(14)支持双向数据通信通过供给的电力的电压和电流调制。

    Device and method for determining a load current
    3.
    发明公开
    Device and method for determining a load current 审中-公开
    Einrichtung und Verfahren zur Bestimmung vonLastströmen

    公开(公告)号:EP1762853A2

    公开(公告)日:2007-03-14

    申请号:EP06076636.7

    申请日:2006-08-29

    CPC classification number: H03F3/347 G01R19/0092 H03F2200/321 H03F2200/462

    Abstract: An integrated driver (200) with improved load current sense capability includes a first transistor (M1), a first amplifier (OA1), a second transistor (M3), a third transistor (M2), a second amplifier (OA2) and a fourth transistor (M4). The integrated driver (200) allows for significantly better fault handling capability, provides accurate thermal and current sensing capability and reduces I/O pin count over prior designs.

    Abstract translation: 具有改善的负载电流检测能力的集成驱动器(200)包括第一晶体管(M1),第一放大器(OA1),第二晶体管(M3),第三晶体管(M2),第二放大器(OA2)和第四 晶体管(M4)。 集成驱动器(200)允许显着更好的故障处理能力,提供精确的热和电流感测能力,并减少I / O引脚数量超过以前的设计。

    Protection device for handling energy transients
    8.
    发明公开
    Protection device for handling energy transients 审中-公开
    Schutzvorrichtung zum Ableiten von Energietransienten

    公开(公告)号:EP1703561A2

    公开(公告)日:2006-09-20

    申请号:EP06075470.2

    申请日:2006-03-01

    Abstract: A protection device (400) for handling energy transients includes a plurality of basic unit Zener diodes (109) connected in series to achieve a desired breakdown voltage. Each of the basic unit Zener diodes (109) is formed in a first-type substrate (102). Each of the basic unit Zener diodes (109) comprises a second-type well (104) formed in the substrate (102), a second-type Zener region (110) formed in the second-type well (104) and a first-type+ region (112) formed over the second-type Zener region (110) between a first and second second-type+ region (108).

    Abstract translation: 用于处理能量瞬变的保护装置(400)包括串联连接以实现期望的击穿电压的多个基本单位齐纳二极管(109)。 基本单元齐纳二极管(109)中的每一个形成在第一类型的基板(102)中。 每个基本单位齐纳二极管(109)包括形成在衬底(102)中的第二类型阱(104),形成在第二类型阱(104)中的第二类型齐纳一个区域(110) 类型+区域(112)形成在第一和第二第二类型+区域(108)之间的第二类型齐纳一个区域(110)上。

    Integrated circuit having negative potential protection
    10.
    发明公开
    Integrated circuit having negative potential protection 审中-公开
    Integrierte Schaltung mit Schutz gegen negative Potentiale

    公开(公告)号:EP1780793A2

    公开(公告)日:2007-05-02

    申请号:EP06076874.4

    申请日:2006-10-12

    CPC classification number: H03K17/0822 H01L29/7816

    Abstract: An integrated circuit (IC) (200) with negative potential protection includes a switch (M1), a gate drive circuit (GD) and a comparator (CMP1). The switch (M1) includes a double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket (108), which is formed in a second-type substrate (110). The switch (M1) also includes a second-type+ isolation ring (110A) formed in the substrate (110) to isolate the first-type epitaxial pocket (108). An output of the gate drive circuit (GD) is coupled across a gate and a source of the switch (M1). An output of the comparator (CMP1) is coupled to a second input of the gate drive circuit (GD) and a first input of the comparator (CMP1) receives a reference signal. A second input of the comparator (CMP1) is coupled to the epitaxial pocket (108). The comparator (CMP1) provides a turn-on signal that causes the switch (M1) to conduct current, when a signal at the second input of the comparator (CMP1) is below the reference signal.

    Abstract translation: 具有负电位保护的集成电路(IC)(200)包括开关(M1),栅极驱动电路(GD)和比较器(CMP1)。 开关(M1)包括形成在第二型衬底(110)中的第一型外延袋(108)中形成的双扩散金属氧化物半导体(DMOS)单元。 开关(M1)还包括形成在衬底(110)中以隔离第一类型外延袋(108)的第二类型+隔离环(110A)。 栅极驱动电路(GD)的输出端跨越开关(M1)的栅极和源极耦合。 比较器(CMP1)的输出端耦合到栅极驱动电路(GD)的第二输入,比较器(CMP1)的第一输入端接收参考信号。 比较器(CMP1)的第二输入耦合到外延口(108)。 当比较器(CMP1)的第二输入端的信号低于参考信号时,比较器(CMP1)提供使开关(M1)导通电流的导通信号。

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