公开(公告)号：EP0962275A2

公开(公告)日：1999-12-08

申请号：EP99201577.6

申请日：1999-05-19

Applicant: Delphi Technologies, Inc.

Inventor： Yeh, Shing ,  Jordan, Larry Lee ,  Duffer, Anthony Alan ,  Sparks, Douglas Ray ,  Beni, Ruth Ellen

IPC: B23K1/00 ,  H01L21/00

CPC classification number: B81C1/00269

Abstract: A method by which semiconductor wafers (10, 12) can be solder bonded to form a semiconductor device, such as a sensor with a micromachined structure (14). The method entails forming a solderable ring (18) on the mating surface of a device wafer (10), such that the solderable ring (18) circumscribes the micromachine (14) on the wafer (10). A solderable layer (20, 26, 28) is formed on a capping wafer (12), such that at least the mating surface (24) of the capping wafer (12) is entirely covered by the solderable layer (20, 26, 28). The solderable layer (20, 26, 28) can be formed by etching the mating surface (24) of the capping wafer (12) to form a recess (16) circumscribed by the mating surface (24), and then forming the solderable layer (26) to cover the mating surface (24) and the recess (16) of the capping wafer (12). Alternatively, the solderable layer (28) can be formed by depositing a solderable material to cover the entire lower surface of the capping wafer (12), patterning the resulting solderable layer (28) to form an etch mask on the capping wafer (12), and then to form the recess (16), such that the solderable layer (28) covers the mating surface (24) but not the surfaces of the recess (16).

Abstract translation: 可以将半导体晶片（10,12）焊接在一起以形成诸如具有微加工结构（14）的传感器的半导体器件的方法。 该方法需要在器件晶片（10）的配合表面上形成可焊接环（18），使得可焊接环（18）围绕晶片（10）上的微机械（14）。 在封盖晶片（12）上形成可焊层（20,26,28），使得封盖晶片（12）的至少配合表面（24）完全被可焊层（20,26,28）覆盖 ）。 可焊层（20,26,28）可以通过蚀刻封盖晶片（12）的配合表面（24）形成由配合表面（24）限定的凹陷（16），然后形成可焊层 （26）以覆盖封盖晶片（12）的配合表面（24）和凹部（16）。 或者，可焊层（28）可以通过沉积可焊接材料以覆盖封盖晶片（12）的整个下表面，形成所得到的可焊接层（28）以在封盖晶片（12）上形成蚀刻掩模 ，然后形成凹部（16），使得可焊接层（28）覆盖配合表面（24），而不覆盖凹部（16）的表面。

公开(公告)号：EP0962275A3

公开(公告)日：2005-08-10

申请号：EP99201577.6

申请日：1999-05-19

Applicant: Delphi Technologies, Inc.

Inventor： Yeh, Shing ,  Jordan, Larry Lee ,  Duffer, Anthony Alan ,  Sparks, Douglas Ray ,  Beni, Ruth Ellen

IPC: B23K1/00 ,  H01L21/00

CPC classification number: B81C1/00269

Abstract: A method by which semiconductor wafers (10, 12) can be solder bonded to form a semiconductor device, such as a sensor with a micromachined structure (14). The method entails forming a solderable ring (18) on the mating surface of a device wafer (10), such that the solderable ring (18) circumscribes the micromachine (14) on the wafer (10). A solderable layer (20, 26, 28) is formed on a capping wafer (12), such that at least the mating surface (24) of the capping wafer (12) is entirely covered by the solderable layer (20, 26, 28). The solderable layer (20, 26, 28) can be formed by etching the mating surface (24) of the capping wafer (12) to form a recess (16) circumscribed by the mating surface (24), and then forming the solderable layer (26) to cover the mating surface (24) and the recess (16) of the capping wafer (12). Alternatively, the solderable layer (28) can be formed by depositing a solderable material to cover the entire lower surface of the capping wafer (12), patterning the resulting solderable layer (28) to form an etch mask on the capping wafer (12), and then to form the recess (16), such that the solderable layer (28) covers the mating surface (24) but not the surfaces of the recess (16).