公开(公告)号：EP1684371A1

公开(公告)日：2006-07-26

申请号：EP06075101.3

申请日：2006-01-17

Applicant: Delphi Technologies, Inc.

Inventor： Eddy, David Sturge ,  Aukland, Neil R. ,  Mantese, Joseph V. ,  Wang, Su-chee Simon ,  Thompson, Margarita

IPC: H01M8/02 ,  C23C8/10 ,  C23C14/08

CPC classification number: C22C14/00 ,  B32B15/013 ,  B32B15/017 ,  C22C9/01 ,  C22C9/05 ,  C22C9/10 ,  C22C27/02 ,  C22C30/00 ,  C22C30/02 ,  C22C30/04 ,  C23C8/02 ,  C23C8/10 ,  C23C14/165 ,  H01M8/0204 ,  H01M8/0208 ,  H01M8/0228 ,  H01M2008/1095

Abstract: Described is a metal alloy comprising at least two metal elements which are not precious metals, said alloy being capable of forming a surface metal oxide layer that is conductive having a contact resistivity of 100 Ωcm or less after the alloy has been subjected to 125°C for 1008 hours.
Also described is a process of preparing a metal alloy providing two metal elements which are not precious metals and oxidizing the metal alloy to produce a surface metal oxide layer that is conductive having a contact resistivity of 100 Ω-cm or less after the alloy has been subjected to 125°C for 1008 hours.

Abstract translation: 描述了包含至少两种不是贵金属的金属元素的金属合金，所述合金能够在合金经受125°之后形成导电性接触电阻率为100Ωcm或更小的表面金属氧化物层 C为1008小时。 还描述了一种制备金属合金的方法，该金属合金提供两种不是贵金属的金属元素，并且氧化金属合金以在合金已经被制成表面金属氧化物层之后具有接触电阻率为100Ω-cm或更小的导电性 在125℃下进行1008小时。

公开(公告)号：EP1956658A3

公开(公告)日：2011-03-23

申请号：EP08151080.2

申请日：2008-02-05

Applicant: Delphi Technologies, Inc.

Inventor： Chang, Shih-Chia ,  Mantese, Joseph V.

IPC: H01L31/032 ,  H01L31/09 ,  H01L31/18

CPC classification number: H01L31/09 ,  H01L31/032 ,  H01L31/18

Abstract: Infrared sensors and methods for manufacturing the infrared sensors are provided. In one exemplary embodiment, the method includes depositing a germanium layer (204) on a silicon substrate (202). The method further includes depositing a first electrically conductive layer (208) on both the germanium layer (204) and a portion of the silicon substrate (202). The method further includes depositing a ferroelectric layer (210) on the first electrically conductive layer (208) opposite the germanium layer (204). The method further includes depositing a second electrically conductive layer (212) on both the ferroelectric layer (210) and a portion of the silicon substrate (202). The method further includes removing the germanium layer (204) by applying a liquid on the germanium layer (204) that dissolves the germanium layer (204) such that a cavity (206) is formed between the first electrically conductive layer (208) and the silicon substrate (202).

公开(公告)号：EP1956658A2

公开(公告)日：2008-08-13

申请号：EP08151080.2

申请日：2008-02-05

Applicant: Delphi Technologies, Inc.

Inventor： Chang, Shih-Chia ,  Mantese, Joseph V.

IPC: H01L31/032 ,  H01L31/09 ,  H01L31/18

CPC classification number: H01L31/09 ,  H01L31/032 ,  H01L31/18

Abstract: Infrared sensors and methods for manufacturing the infrared sensors are provided. In one exemplary embodiment, the method includes depositing a germanium layer (204) on a silicon substrate (202). The method further includes depositing a first electrically conductive layer (208) on both the germanium layer (204) and a portion of the silicon substrate (202). The method further includes depositing a ferroelectric layer (210) on the first electrically conductive layer (208) opposite the germanium layer (204). The method further includes depositing a second electrically conductive layer (212) on both the ferroelectric layer (210) and a portion of the silicon substrate (202). The method further includes removing the germanium layer (204) by applying a liquid on the germanium layer (204) that dissolves the germanium layer (204) such that a cavity (206) is formed between the first electrically conductive layer (208) and the silicon substrate (202).

Abstract translation: 提供了用于制造红外传感器的红外传感器和方法。 在一个示例性实施例中，该方法包括在硅衬底（202）上沉积锗层（204）。 该方法还包括在锗层（204）和硅衬底（202）的一部分上沉积第一导电层（208）。 该方法还包括在与锗层（204）相对的第一导电层（208）上沉积铁电层（210）。 该方法还包括在铁电层（210）和硅衬底（202）的一部分上沉积第二导电层（212）。 所述方法还包括通过在溶解锗层（204）的锗层（204）上施加液体来移除锗层（204），使得在第一导电层（208）和 硅衬底（202）。

公开(公告)号：EP1106989A1

公开(公告)日：2001-06-13

申请号：EP00201352.2

申请日：2000-04-14

Applicant: Delphi Technologies, Inc.

Inventor： Schubring, Norman W. ,  Mantese, Joseph V. ,  Micheli, Adolph L. ,  Catalan, Antonio B.

IPC: G01N21/17 ,  G01J5/34 ,  G01K7/00

CPC classification number: G01J5/34 ,  G01K7/003

Abstract: A ferroelectric/pyroelectric sensor (92) that employs a technique for determining a charge output of a pyroelectric element (96) of the sensor (92) by measuring the hysteresis loop output of the element (96) several times during a particular time frame for the same temperature. An external AC signal (104) is applied to the pyroelectric element (96) to cause the hysteresis loop output from the element (96) to switch polarization. Charge integration circuitry (106), such as a combination capacitor (108) and operational amplifier (110), is employed to measure the charge from the element (96). A mechanical shutter is not used, and thus the charge integration output from the element (96) is directly proportional to the incident radiation thereof.

Abstract translation: 一种铁电/热电传感器（92），其采用用于通过在特定时间范围内测量元件（96）的滞后回路输出数次来确定传感器（92）的热电元件（96）的电荷输出的技术， 相同的温度。 外部AC信号（104）被施加到热电元件（96），以使得从元件（96）输出的磁滞回线切换偏振。 使用诸如组合电容器（108）和运算放大器（110）的电荷积分电路（106）来测量来自元件（96）的电荷。 不使用机械快门，因此来自元件（96）的电荷积分输出与其入射辐射成正比。