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    Method for the mitigation of hot spots in integrated circuits chip
    1.
    发明公开
    Method for the mitigation of hot spots in integrated circuits chip 审中-公开
    Verfahren zur Verminderung heisser Stellen in einem integrierten Schaltungschip

    公开(公告)号：EP1750303A2

    公开(公告)日：2007-02-07

    申请号：EP06076370.3

    申请日：2006-07-06

    Applicant: Delphi Technologies, Inc.

    Inventor： Lee, Poh-Seng ,  Chang, Shih-Chia

    IPC: H01L23/473

    CPC classification number: H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to a method and apparatus for controlling the temperature of integrated circuit chips. Specifically, the invention relates to method and apparatus for controlling the temperature gradient across integrated circuit chips (30).

    Abstract translation: 本发明涉及一种用于控制集成电路芯片的温度的方法和装置。 具体地，本发明涉及用于控制跨越集成电路芯片（30）的温度梯度的方法和装置。

    Method for forming ferromagnetic targets for position sensors
    4.
    发明公开
    Method for forming ferromagnetic targets for position sensors 审中-公开
    Verfahren zur Herstellung von ferromagnetischen瞄准Positionssensoren

    公开(公告)号：EP1388730A2

    公开(公告)日：2004-02-11

    申请号：EP03077375.8

    申请日：2003-07-29

    Applicant: Delphi Technologies, Inc.

    Inventor： Schroeder, Thaddeus ,  Chang, Shih-Chia ,  Guerra, Jose A.

    IPC: G01D5/14

    CPC classification number: G01D5/14 ,  Y10T29/49069 ,  Y10T29/49075 ,  Y10T29/49156

    Abstract: A process for forming ferromagnetic targets 8 for position and speed sensors 15. The targets 8 are formed on a conductor-clad substrate 23 by first applying a layer of photoresist material 26 and then patterning and etching the photoresist 26 to form trenches 42 defined by the shape and dimensions of the required targets 8. Ferromagnetic material is formed in the trenches 42 to complete the formation of the targets 8.

    Abstract translation: 用于形成用于位置和速度传感器15的铁磁体目标8的工艺。靶8通过首先施加一层光致抗蚀剂材料26形成在导体覆盖的基板23上，然后对光致抗蚀剂26进行图案化和蚀刻以形成由 所需目标的形状和尺寸8.在沟槽42中形成铁磁材料以完成靶8的形成。

    Ferroelectric infrared sensors and methods for their manufacturing
    5.
    发明公开
    Ferroelectric infrared sensors and methods for their manufacturing 审中-公开
    铁电红外传感器和它们的制备方法

    公开(公告)号：EP1956658A3

    公开(公告)日：2011-03-23

    申请号：EP08151080.2

    申请日：2008-02-05

    Applicant: Delphi Technologies, Inc.

    Inventor： Chang, Shih-Chia ,  Mantese, Joseph V.

    IPC: H01L31/032 ,  H01L31/09 ,  H01L31/18

    CPC classification number: H01L31/09 ,  H01L31/032 ,  H01L31/18

    Abstract: Infrared sensors and methods for manufacturing the infrared sensors are provided. In one exemplary embodiment, the method includes depositing a germanium layer (204) on a silicon substrate (202). The method further includes depositing a first electrically conductive layer (208) on both the germanium layer (204) and a portion of the silicon substrate (202). The method further includes depositing a ferroelectric layer (210) on the first electrically conductive layer (208) opposite the germanium layer (204). The method further includes depositing a second electrically conductive layer (212) on both the ferroelectric layer (210) and a portion of the silicon substrate (202). The method further includes removing the germanium layer (204) by applying a liquid on the germanium layer (204) that dissolves the germanium layer (204) such that a cavity (206) is formed between the first electrically conductive layer (208) and the silicon substrate (202).

    Ferroelectric infrared sensors and methods for their manufacturing
    7.
    发明公开
    Ferroelectric infrared sensors and methods for their manufacturing 审中-公开
    Ferroelektrische Infrarot-Sensoren und Verfahren zu ihrer Herstellung

    公开(公告)号：EP1956658A2

    公开(公告)日：2008-08-13

    申请号：EP08151080.2

    申请日：2008-02-05

    Applicant: Delphi Technologies, Inc.

    Inventor： Chang, Shih-Chia ,  Mantese, Joseph V.

    IPC: H01L31/032 ,  H01L31/09 ,  H01L31/18

    CPC classification number: H01L31/09 ,  H01L31/032 ,  H01L31/18

    Abstract: Infrared sensors and methods for manufacturing the infrared sensors are provided. In one exemplary embodiment, the method includes depositing a germanium layer (204) on a silicon substrate (202). The method further includes depositing a first electrically conductive layer (208) on both the germanium layer (204) and a portion of the silicon substrate (202). The method further includes depositing a ferroelectric layer (210) on the first electrically conductive layer (208) opposite the germanium layer (204). The method further includes depositing a second electrically conductive layer (212) on both the ferroelectric layer (210) and a portion of the silicon substrate (202). The method further includes removing the germanium layer (204) by applying a liquid on the germanium layer (204) that dissolves the germanium layer (204) such that a cavity (206) is formed between the first electrically conductive layer (208) and the silicon substrate (202).

    Abstract translation: 提供了用于制造红外传感器的红外传感器和方法。 在一个示例性实施例中，该方法包括在硅衬底（202）上沉积锗层（204）。 该方法还包括在锗层（204）和硅衬底（202）的一部分上沉积第一导电层（208）。 该方法还包括在与锗层（204）相对的第一导电层（208）上沉积铁电层（210）。 该方法还包括在铁电层（210）和硅衬底（202）的一部分上沉积第二导电层（212）。 所述方法还包括通过在溶解锗层（204）的锗层（204）上施加液体来移除锗层（204），使得在第一导电层（208）和 硅衬底（202）。

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