Abstract:
A technique for reducing a parasitic DC bias voltage on a sensor (S1) monitors the parasitic DC bias voltage on a first element (10) of the sensor (S1). A controlled bias voltage that is applied between the first element (10) of the sensor (S1) and a second element (12) of the sensor (S1) is then modified to substantially maintain the parasitic DC bias voltage at a desired potential.
Abstract:
A sensing system, comprising: a sensing assembly, the sensing assembly having: a trim resistor integrally formed with the sensing assembly, the trim resistor having a resistance value; a first sensing element for providing a first signal in response to a first sensed condition; a second sensing element for providing a second signal in response to a second sensed condition; and a controller removably secured to the sensing assembly and receiving the first signal and the second signal, the controller being configured to determine the resistance value of the trim resistor; a database associated with the controller, the database having a plurality of resistance values, each resistance value in the database identifies a pair of compensation values; a microprocessor associated with the controller, the microprocessor receiving the resistance value of the trim resistor, the first signal and the second signal, the resistance value of the trim resistor being used to define a selected pair of compensation values from the database, one of the selected pair of compensation values is used to adjust the first signal to provide a first adjusted signal and the other one of the selected pair of compensation values is used to adjust the second signal to provide a second adjusted signal.
Abstract:
A technique for reducing a parasitic DC bias voltage on a sensor (S1) monitors the parasitic DC bias voltage on a first element (10) of the sensor (S1). A controlled bias voltage that is applied between the first element (10) of the sensor (S1) and a second element (12) of the sensor (S1) is then modified to substantially maintain the parasitic DC bias voltage at a desired potential.
Abstract:
A method for measuring an impedance of a sensor (S1) that is subject to ion migration includes a number of steps. Initially, a first electrical pulse (VCELL) is applied to an input of the sensor (S1), whose impedance varies according to a first gas concentration in a gas stream. Next, a second electrical pulse (VCELL) is applied to the input of the sensor (S1). The energy of the first and second electrical pulses (VCELL) is approximately the same and the first and second electrical pulses (VCELL) have opposite polarity. A sensor load current (ICELL) is determined during at least one of the first and second electrical pulses (VCELL) to provide a first sensor current (ICELL). Then, the sensor load current (ICELL) during the same one of the first and second electrical pulses (VCELL) is determined to provide a second sensor current (ICELL). Finally, at least one component of the impedance of the sensor (S1) is determined based upon the first and second sensor currents (ICELL).