公开(公告)号：EP1754970A2

公开(公告)日：2007-02-21

申请号：EP06076379.4

申请日：2006-07-07

Applicant: Delphi Technologies, Inc.

Inventor： Mowery, Kenneth D. ,  Tackitt, Douglas J.

IPC: G01N27/12

CPC classification number: G01N27/122

Abstract: A technique for reducing a parasitic DC bias voltage on a sensor (S1) monitors the parasitic DC bias voltage on a first element (10) of the sensor (S1). A controlled bias voltage that is applied between the first element (10) of the sensor (S1) and a second element (12) of the sensor (S1) is then modified to substantially maintain the parasitic DC bias voltage at a desired potential.

Abstract translation: 用于减小传感器（S1）上的寄生直流偏置电压的技术监视传感器（S1）的第一元件（10）上的寄生DC偏置电压。 施加在传感器（S1）的第一元件（10）和传感器（S1）的第二元件（12）之间的受控偏置电压被修改，以将寄生DC偏置电压基本上保持在期望的电位。

公开(公告)号：EP1601079A2

公开(公告)日：2005-11-30

申请号：EP05076196.4

申请日：2005-05-24

Applicant: Delphi Technologies, Inc.

Inventor： Choi, Hyun-Sung ,  Tackitt, Douglas J.

IPC: H02J7/34

CPC classification number: H02J7/345 ,  H02M2001/322

Abstract: A technique for discharging an energy storage device coupled to a power bus provides a first discharge path for the energy storage device (C BUS ), when the power bus is connected to a battery (V BATT ), and a second discharge path for the energy storage device (C BUS ), when the power bus is disconnected from the battery (V BATT ). The first discharge path has a higher impedance value than the second discharge path.

Abstract translation: 当功率总线连接到电池（VBATT）时，用于释放耦合到功率总线的能量存储装置的技术提供用于能量存储装置（CBUS）的第一放电路径，并且用于能量存储装置 （CBUS），当电源总线与电池断开时（VBATT）。 第一放电路径具有比第二放电路径更高的阻抗值。

公开(公告)号：EP1754970A3

公开(公告)日：2010-03-31

申请号：EP06076379.4

申请日：2006-07-07

Applicant: Delphi Technologies, Inc.

Inventor： Mowery, Kenneth D. ,  Tackitt, Douglas J.

IPC: G01N27/12

CPC classification number: G01N27/122

Abstract: A technique for reducing a parasitic DC bias voltage on a sensor (S1) monitors the parasitic DC bias voltage on a first element (10) of the sensor (S1). A controlled bias voltage that is applied between the first element (10) of the sensor (S1) and a second element (12) of the sensor (S1) is then modified to substantially maintain the parasitic DC bias voltage at a desired potential.

公开(公告)号：EP1541997A1

公开(公告)日：2005-06-15

申请号：EP04078339.1

申请日：2004-12-09

Applicant: Delphi Technologies, Inc.

Inventor： Mowery, Kenneth D. ,  Tackitt, Douglas J.

IPC: G01N27/12 ,  G01N33/00

CPC classification number: G01N33/0054 ,  G01N27/122 ,  Y02A50/246

Abstract: A method for measuring an impedance of a sensor (S1) that is subject to ion migration includes a number of steps. Initially, a first electrical pulse (VCELL) is applied to an input of the sensor (S1), whose impedance varies according to a first gas concentration in a gas stream. Next, a second electrical pulse (VCELL) is applied to the input of the sensor (S1). The energy of the first and second electrical pulses (VCELL) is approximately the same and the first and second electrical pulses (VCELL) have opposite polarity. A sensor load current (ICELL) is determined during at least one of the first and second electrical pulses (VCELL) to provide a first sensor current (ICELL). Then, the sensor load current (ICELL) during the same one of the first and second electrical pulses (VCELL) is determined to provide a second sensor current (ICELL). Finally, at least one component of the impedance of the sensor (S1) is determined based upon the first and second sensor currents (ICELL).

Abstract translation: 用于测量经受离子迁移的传感器（S1）的阻抗的方法包括多个步骤。 最初，将第一电脉冲（VCELL）施加到传感器（S1）的输入端，其阻抗根据气流中的第一气体浓度而变化。 接下来，将第二电脉冲（VCELL）施加到传感器（S1）的输入端。 第一和第二电脉冲（VCELL）的能量大致相同，并且第一和第二电脉冲（VCELL）具有相反的极性。 在第一和第二电脉冲（VCELL）中的至少一个期间确定传感器负载电流（ICELL）以提供第一传感器电流（ICELL）。 然后，确定在第一和第二电脉冲（VCELL）中相同的一个期间的传感器负载电流（ICELL）以提供第二传感器电流（ICELL）。 最后，基于第一和第二传感器电流（ICELL）来确定传感器（S1）的阻抗的至少一个分量。