公开(公告)号：JPH10199430A

公开(公告)日：1998-07-31

申请号：JP20598

申请日：1998-01-05

Applicant: EATON CORP

Inventor： HORSKY THOMAS N ,  REYNOLDS WILLIAM E ,  CLOUTIER RICHARD M

IPC: C23C14/48 ,  H01J27/08 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To lengthen the service life by using a cathode to shield a cathode filament from a plasma flow as well as to strengthen it to sputtering by a plasma ion as compared with a sunk cathode. SOLUTION: An ion source to be used in an ion implantation machine, constitutes a gas blocking up chamber having conductive chamber walls 130a to 130d to decide a gas ionizing area R, and has an outlet opening 78 to emit an ion in this blocking-up chamber. A structure to form an ion beam by emitting an ion from the blocking-up chamber is arranged in the blocking-up chamber. A part of a cathode extends in an opening of the blocking-up chamber, and a cathode body in which a filament 178 is arranged, contains an inside cylindrical member 162, an outside cylindrical member 160 coaxial with this and an end cap 164 pressed in the inside cylindrical member 162. The filament 178 is excited, and the end cap 164 is heated, and an electron is emitted to the ionizing area. The filament 178 is protected from plasma excited in the ionizing area R by the cathode body.

公开(公告)号：JPH10134728A

公开(公告)日：1998-05-22

申请号：JP29829097

申请日：1997-10-30

Applicant: EATON CORP

Inventor： HORSKY THOMAS N ,  REYNOLDS WILLIAM E ,  CLOUTIER RICHARD M

IPC: C23C14/48 ,  H01J27/08 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide a novel, improved ion source employed for an ion implanting machine and a cathode structure thereof. SOLUTION: An ion source employed for an ion implanting machine has a conductive chamber walls (130a to 130d) defining a gas ionized area. A gas closing chamber has an exit opening 78 for discharging an ion from this chamber, and a base of the gas closing chamber constituted by an ion source housing, a flange 82, and an ion source block 120 with respect to a structure such as an analysis magnet for forming an ion beam by an ion discharged from the gas closing chamber and a lead electrode is disposed.

公开(公告)号：CA2162748A1

公开(公告)日：1996-05-16

申请号：CA2162748

申请日：1995-11-14

Applicant: EATON CORP

Inventor： SFERLAZZO PIERO ,  MCINTYRE EDWARD K JR ,  REYNOLDS WILLIAM E ,  CLOUTIER RICHARD M ,  HORSKY THOMAS N

IPC: H01J27/20 ,  H01J27/14 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01J3/00 ,  H01J3/04

Abstract: An ion source (12) embodying the present invention is for use in an ion implanter (10). The ion source comprises a gas confinement chamber (76) having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening (78) to allow ions to exit the chamber. A base (120) positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A gas supply is in communication with the gas confinement chamber for conducing an ionizable gas into the gas confinement chamber. A cathode (124) is supported by the base and positioned with respect to said gas confinement chamber to emit ionizaing electrons into the gas ionization zone. The cathode comprises a tubular conductive body (160, 162) that partially extends into the gas confinement chamber and includes a conductive cap (164) that faces into the gas confinement chamber for emitting ionizaing electrons into the gas confinement chamber. A filament (178) is supported by the base (120) at a position inside the tubular conductive body of the cathode for heating the cap and cause the ionizing electrons to be emitted from the cap into the gas confinement chamber.

公开(公告)号：CA2216818C

公开(公告)日：2002-10-08

申请号：CA2216818

申请日：1997-10-16

Applicant: EATON CORP

Inventor： REYNOLDS WILLIAM E ,  CLOUTIER RICHARD M ,  HORSKY THOMAS N

IPC: C23C14/48 ,  H01J27/08 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01J37/30 ,  H01L21/77

Abstract: An ion source embodying the present invention is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber.

公开(公告)号：CA2162748C

公开(公告)日：2001-04-17

申请号：CA2162748

申请日：1995-11-14

Applicant: EATON CORP

Inventor： SFERLAZZO PIERO ,  MCINTYRE EDWARD K JR ,  REYNOLDS WILLIAM E ,  CLOUTIER RICHARD M ,  HORSKY THOMAS N

IPC: H01J27/20 ,  H01J27/14 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01J3/00 ,  H01J3/04

Abstract: An ion source (12) embodying the present invention is for use in an ion implanter (10). The ion source comprises a gas confinement chamber (76) havi ng conductive chamber walls that bound a gas ionization zone. The gas confineme nt chamber includes an exit opening (78) to allow ions to exit the chamber. A b ase (120) positions the gas confinement chamber relative to structure for formin g an ion beam from ions exiting the gas confinement chamber. A gas supply is in communication with the gas confinement chamber for conducing an ionizable ga s into the gas confinement chamber. A cathode (124) is supported by the base and positioned with respect to said gas confinement chamber to emit ionizaing el ectrons into the gas ionization zone. The cathode comprises a tubular conductive bod y (160, 162) that partially extends into the gas confinement chamber and includes a conductive cap (164) that faces into the gas confinement chamber for emittin g ionizaing electrons into the gas confinement chamber. A filament (178) is su pported by the base (120) at a position inside the tubular conductive body of the ca thode for heating the cap and cause the ionizing electrons to be emitted from the cap into the gas confinement chamber.

公开(公告)号：CA1303254C

公开(公告)日：1992-06-09

申请号：CA614869

申请日：1989-09-29

Applicant: EATON CORP

Inventor： BRAMHALL ROBERT B JR ,  CLOUTIER RICHARD M

IPC: C23C14/50 ,  C23C14/56 ,  H01L21/203 ,  H01L21/687 ,  C23C14/34

Abstract: A platen assembly (66) for holding a semiconductor wafer (30) for vacuum processing. The platen is a substantially solid, circular plate (194) which is surrounded by a movable clamp assembly (192) in the form of a ring having formed thereon a first set of projections (257, 258) for initially receiving a wafer above the plate, and a second set of projections (256) spaced axially from the first set for clamping the wafer to the plate. The ring is formed of two parts (251, 252) spaced apart axially and connected by spring members (254). A slot (255) is formed in the ring to permit the entry of wafers between the sets of projections. The clamp assembly is moved between a water receiving position and a clamping position by an annular fluid cylinder (228) and piston (232) assembly. The fluid cylinder and piston assembly includes bellows seals acting between the cylinder and piston rods (238) to maintain the vacuum integrity of the system.

公开(公告)号：CA2222369C

公开(公告)日：2002-10-22

申请号：CA2222369

申请日：1997-12-16

Applicant: EATON CORP

Inventor： HORSKY THOMAS N ,  CLOUTIER RICHARD M ,  REYNOLDS WILLIAM E

IPC: C23C14/48 ,  H01J27/08 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01J37/06

Abstract: An ion source embodying the present invention is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A portion of a cathode extends into an opening in the gas confinement chamber. The cathode includes a cathode body defining an interior region in which a filament is disposed. The cathode body comprises an inner tubular member a coaxial outer tubular member and an endcap having a reduced cross section body portion with a radially expending rim. The endcap is pressed into the inner tubular member. The filament is energized to heat the endcap which, in turn , emits electrons into the gas ionization zone. The filament is protected fro m energized plasma in the gas ionization zone by the cathode body.

公开(公告)号：CA2222369A1

公开(公告)日：1998-06-30

申请号：CA2222369

申请日：1997-12-16

Applicant: EATON CORP

Inventor： HORSKY THOMAS N ,  CLOUTIER RICHARD M ,  REYNOLDS WILLIAM E

IPC: C23C14/48 ,  H01J27/08 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01J37/06

Abstract: An ion source embodying the present invention is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A portion of a cathode extends into an opening in the gas confinement chamber. The cathode includes a cathode body defining an interior region in which a filament is disposed. The cathode body comprises an inner tubular member a coaxial outer tubular member and an endcap having a reduced cross section body portion with a radially expending rim. The endcap is pressed into the inner tubular member. The filament is energized to heat the endcap which, in turn , emits electrons into the gas ionization zone. The filament is protected fro m energized plasma in the gas ionization zone by the cathode body.

公开(公告)号：CA2216818A1

公开(公告)日：1998-04-30

申请号：CA2216818

申请日：1997-10-16

Applicant: EATON CORP

Inventor： REYNOLDS WILLIAM E ,  CLOUTIER RICHARD M ,  HORSKY THOMAS N

IPC: C23C14/48 ,  H01J27/08 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01J37/30 ,  H01L21/77

Abstract: An ion source embodying the present invention is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber.