公开(公告)号：WO9732335A3

公开(公告)日：1997-11-13

申请号：PCT/US9702412

申请日：1997-02-14

Applicant: EATON CORP

Inventor： BLAKE JULIAN G ,  SFERLAZZO PIERO ,  ROSE PETER H ,  BRAILOVE ADAM A

IPC: H01J37/04 ,  C23C14/48 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317 ,  H01L21/00 ,  H01L21/265 ,  H01L21/677 ,  H01L21/683

CPC classification number: H01L21/67109 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/083 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/31701 ,  H01J2237/31705 ,  H01L21/67069 ,  H01L21/67739 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/67778 ,  H01L21/6838

Abstract: A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and an ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.

公开(公告)号：DE69507232T2

公开(公告)日：1999-08-19

申请号：DE69507232

申请日：1995-09-22

Applicant: EATON CORP

Inventor： SFERLAZZO PIERO ,  ROSE PETER ,  TRUEIRA FRANK RAYMOND

IPC: C23C14/48 ,  H01J27/18 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01J37/32

Abstract: A microwave energized ion source apparatus (12) is supported by a support tube (94) extending into a cavity (57) defined by a housing assembly (22) and includes a dielectric plasma chamber (42), a pair of vaporizers (44), a microwave tuning and transmission assembly (40) and a magnetic field generating assembly (46). The chamber (42) defines an interior region (50) into which source material and ionizable gas are routed. The chamber (42) is overlied by a cap (62) having an arc slit (64) through which generated ions exit the chamber (42). The microwave tuning and transmission assembly (40), which feeds microwave energy to the chamber (42) in the TEM mode, includes a coaxial microwave energy transmission line center conductor (54). One end (66) of the conductor (54) fits into a recessed portion (68) of the chamber (42) and transmits microwave energy to the chamber (42). The center conductor (54) extends through an evacuated portion of a coaxial tube (56) surrounding the conductor (54). A vacuum seal (58) is disposed in or adjacent the coaxial tube (56) and from the boundary between the evacuated coaxial tube (56) and a non-evacuated region.

公开(公告)号：ES2127999T3

公开(公告)日：1999-05-01

申请号：ES95306700

申请日：1995-09-22

Applicant: EATON CORP

Inventor： SFERLAZZO PIERO ,  ROSE PETER ,  TRUEIRA FRANK RAYMOND

IPC: H01J27/18 ,  H01J37/08 ,  C23C14/48 ,  H01J37/317 ,  H01L21/265 ,  H01J37/32

Abstract: A microwave energized ion source apparatus (12) is supported by a support tube (94) extending into a cavity (57) defined by a housing assembly (22) and includes a dielectric plasma chamber (42), a pair of vaporizers (44), a microwave tuning and transmission assembly (40) and a magnetic field generating assembly (46). The chamber (42) defines an interior region (50) into which source material and ionizable gas are routed. The chamber (42) is overlied by a cap (62) having an arc slit (64) through which generated ions exit the chamber (42). The microwave tuning and transmission assembly (40), which feeds microwave energy to the chamber (42) in the TEM mode, includes a coaxial microwave energy transmission line center conductor (54). One end (66) of the conductor (54) fits into a recessed portion (68) of the chamber (42) and transmits microwave energy to the chamber (42). The center conductor (54) extends through an evacuated portion of a coaxial tube (56) surrounding the conductor (54). A vacuum seal (58) is disposed in or adjacent the coaxial tube (56) and from the boundary between the evacuated coaxial tube (56) and a non-evacuated region.

公开(公告)号：DE69209865T2

公开(公告)日：1996-11-28

申请号：DE69209865

申请日：1992-01-16

Applicant: EATON CORP

Inventor： SFERLAZZO PIERO

IPC: C23C14/48 ,  C23C14/54 ,  H01J37/02 ,  H01J37/04 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265

Abstract: A sensor (110, 210) positioned relative to an ion beam (20) for use in an ion implantation system (10) for doping semiconductor wafers (41). The sensor allows relatively accurate determination of ion beam potential so that steps can be taken to minimize this potential. In a preferred design, a number of electrodes (130, 132) are positioned relative the ion beam and biased at control voltages which allow the ion beam potential to be determined. In one embodiment, the ion beam potential is used to control injection of neutralizing electrons into the ion beam.

公开(公告)号：DE69507776T2

公开(公告)日：1999-09-16

申请号：DE69507776

申请日：1995-11-10

Applicant: EATON CORP

Inventor： SFERLAZZO PIERO ,  MCINTYRE EDWARD KIRBY ,  REYNOLDS WILLIAM EDWARD ,  CLOUTIER RICHARD MAURICE ,  HORSKY THOMAS NEIL

IPC: H01J27/20 ,  H01J27/14 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265

Abstract: The ion source comprises a confinement chamber with conductive chamber walls which bound a confinement chamber interior defines an ion exit aperture. The confinement chamber includes an access opening in one of the conductive chamber walls at a position spaced from the exit aperture and a base supports the confinement chamber in a position relative to structure for forming an ion beam. A cathode (124) is supported by the base and positioned to emit ionising electrons into the chamber interior for ionising the material in the interior of the confinement chamber. The cathode comprises a tubular conductive part extending through the access opening into the confinement chamber and supports a conductive cap (164) at one end which faces into the interior of the confinement chamber and includes an open end axially opposite the conductive cap. A filament (178) is supported by the base at a position inside the tubular conductive part for heating the cap to cause the ionising electrons to be emitted from the conductive cap into the confinement chamber. A mounting arm is spaced from the base by an insulator and supports the cathode within the access opening in a spaced relation to the conductive chamber wall. Another mounting structure is electrically isolated from the mounting arm and extends into the open end of the tubular conductive part to support the filament in spaced relation to the conductive cap of the cathode.

公开(公告)号：DE69209865D1

公开(公告)日：1996-05-23

申请号：DE69209865

申请日：1992-01-16

Applicant: EATON CORP

Inventor： SFERLAZZO PIERO

IPC: C23C14/48 ,  C23C14/54 ,  H01J37/02 ,  H01J37/04 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265

Abstract: A sensor (110, 210) positioned relative to an ion beam (20) for use in an ion implantation system (10) for doping semiconductor wafers (41). The sensor allows relatively accurate determination of ion beam potential so that steps can be taken to minimize this potential. In a preferred design, a number of electrodes (130, 132) are positioned relative the ion beam and biased at control voltages which allow the ion beam potential to be determined. In one embodiment, the ion beam potential is used to control injection of neutralizing electrons into the ion beam.

公开(公告)号：CA2162748C

公开(公告)日：2001-04-17

申请号：CA2162748

申请日：1995-11-14

Applicant: EATON CORP

Inventor： SFERLAZZO PIERO ,  MCINTYRE EDWARD K JR ,  REYNOLDS WILLIAM E ,  CLOUTIER RICHARD M ,  HORSKY THOMAS N

IPC: H01J27/20 ,  H01J27/14 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01J3/00 ,  H01J3/04

Abstract: An ion source (12) embodying the present invention is for use in an ion implanter (10). The ion source comprises a gas confinement chamber (76) havi ng conductive chamber walls that bound a gas ionization zone. The gas confineme nt chamber includes an exit opening (78) to allow ions to exit the chamber. A b ase (120) positions the gas confinement chamber relative to structure for formin g an ion beam from ions exiting the gas confinement chamber. A gas supply is in communication with the gas confinement chamber for conducing an ionizable ga s into the gas confinement chamber. A cathode (124) is supported by the base and positioned with respect to said gas confinement chamber to emit ionizaing el ectrons into the gas ionization zone. The cathode comprises a tubular conductive bod y (160, 162) that partially extends into the gas confinement chamber and includes a conductive cap (164) that faces into the gas confinement chamber for emittin g ionizaing electrons into the gas confinement chamber. A filament (178) is su pported by the base (120) at a position inside the tubular conductive body of the ca thode for heating the cap and cause the ionizing electrons to be emitted from the cap into the gas confinement chamber.

公开(公告)号：DE69507776D1

公开(公告)日：1999-03-25

申请号：DE69507776

申请日：1995-11-10

Applicant: EATON CORP

Inventor： SFERLAZZO PIERO ,  MCINTYRE EDWARD KIRBY ,  REYNOLDS WILLIAM EDWARD ,  CLOUTIER RICHARD MAURICE ,  HORSKY THOMAS NEIL

IPC: H01J27/20 ,  H01J27/14 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265

Abstract: The ion source comprises a confinement chamber with conductive chamber walls which bound a confinement chamber interior defines an ion exit aperture. The confinement chamber includes an access opening in one of the conductive chamber walls at a position spaced from the exit aperture and a base supports the confinement chamber in a position relative to structure for forming an ion beam. A cathode (124) is supported by the base and positioned to emit ionising electrons into the chamber interior for ionising the material in the interior of the confinement chamber. The cathode comprises a tubular conductive part extending through the access opening into the confinement chamber and supports a conductive cap (164) at one end which faces into the interior of the confinement chamber and includes an open end axially opposite the conductive cap. A filament (178) is supported by the base at a position inside the tubular conductive part for heating the cap to cause the ionising electrons to be emitted from the conductive cap into the confinement chamber. A mounting arm is spaced from the base by an insulator and supports the cathode within the access opening in a spaced relation to the conductive chamber wall. Another mounting structure is electrically isolated from the mounting arm and extends into the open end of the tubular conductive part to support the filament in spaced relation to the conductive cap of the cathode.

公开(公告)号：DE69507232D1

公开(公告)日：1999-02-25

申请号：DE69507232

申请日：1995-09-22

Applicant: EATON CORP

Inventor： SFERLAZZO PIERO ,  ROSE PETER ,  TRUEIRA FRANK RAYMOND

IPC: C23C14/48 ,  H01J27/18 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01J37/32

Abstract: A microwave energized ion source apparatus (12) is supported by a support tube (94) extending into a cavity (57) defined by a housing assembly (22) and includes a dielectric plasma chamber (42), a pair of vaporizers (44), a microwave tuning and transmission assembly (40) and a magnetic field generating assembly (46). The chamber (42) defines an interior region (50) into which source material and ionizable gas are routed. The chamber (42) is overlied by a cap (62) having an arc slit (64) through which generated ions exit the chamber (42). The microwave tuning and transmission assembly (40), which feeds microwave energy to the chamber (42) in the TEM mode, includes a coaxial microwave energy transmission line center conductor (54). One end (66) of the conductor (54) fits into a recessed portion (68) of the chamber (42) and transmits microwave energy to the chamber (42). The center conductor (54) extends through an evacuated portion of a coaxial tube (56) surrounding the conductor (54). A vacuum seal (58) is disposed in or adjacent the coaxial tube (56) and from the boundary between the evacuated coaxial tube (56) and a non-evacuated region.

公开(公告)号：AU1960197A

公开(公告)日：1997-09-16

申请号：AU1960197

申请日：1997-02-14

Applicant: EATON CORP

Inventor： BLAKE JULIAN G ,  SFERLAZZO PIERO ,  ROSE PETER H ,  BRAILOVE ADAM A

IPC: H01J37/04 ,  C23C14/48 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317 ,  H01L21/00 ,  H01L21/265 ,  H01L21/677 ,  H01L21/683

Abstract: A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.