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公开(公告)号:DE69507776T2
公开(公告)日:1999-09-16
申请号:DE69507776
申请日:1995-11-10
Applicant: EATON CORP
Inventor: SFERLAZZO PIERO , MCINTYRE EDWARD KIRBY , REYNOLDS WILLIAM EDWARD , CLOUTIER RICHARD MAURICE , HORSKY THOMAS NEIL
IPC: H01J27/20 , H01J27/14 , H01J37/08 , H01J37/317 , H01L21/265
Abstract: The ion source comprises a confinement chamber with conductive chamber walls which bound a confinement chamber interior defines an ion exit aperture. The confinement chamber includes an access opening in one of the conductive chamber walls at a position spaced from the exit aperture and a base supports the confinement chamber in a position relative to structure for forming an ion beam. A cathode (124) is supported by the base and positioned to emit ionising electrons into the chamber interior for ionising the material in the interior of the confinement chamber. The cathode comprises a tubular conductive part extending through the access opening into the confinement chamber and supports a conductive cap (164) at one end which faces into the interior of the confinement chamber and includes an open end axially opposite the conductive cap. A filament (178) is supported by the base at a position inside the tubular conductive part for heating the cap to cause the ionising electrons to be emitted from the conductive cap into the confinement chamber. A mounting arm is spaced from the base by an insulator and supports the cathode within the access opening in a spaced relation to the conductive chamber wall. Another mounting structure is electrically isolated from the mounting arm and extends into the open end of the tubular conductive part to support the filament in spaced relation to the conductive cap of the cathode.
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公开(公告)号:SG64450A1
公开(公告)日:1999-04-27
申请号:SG1997003742
申请日:1997-10-14
Applicant: EATON CORP
IPC: C23C14/48 , H01J27/08 , H01J37/08 , H01J37/317 , H01L21/265
Abstract: An ion source (12) embodying the present invention is for use in an ion implanter (10). The ion source comprises a gas confinement chamber (76) having conductive chamber walls (130a, 130b, 130c, 130d, 130e, 132) that bound a gas ionization zone (R). The gas confinement chamber includes an exit opening (78) to allow ions to exit the chamber. A base (80, 82, 120) positions the gas confinement chamber relative to structure (90, 14) for forming an ion beam (20) from ions exiting the gas confinement chamber.
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公开(公告)号:DE69507776D1
公开(公告)日:1999-03-25
申请号:DE69507776
申请日:1995-11-10
Applicant: EATON CORP
Inventor: SFERLAZZO PIERO , MCINTYRE EDWARD KIRBY , REYNOLDS WILLIAM EDWARD , CLOUTIER RICHARD MAURICE , HORSKY THOMAS NEIL
IPC: H01J27/20 , H01J27/14 , H01J37/08 , H01J37/317 , H01L21/265
Abstract: The ion source comprises a confinement chamber with conductive chamber walls which bound a confinement chamber interior defines an ion exit aperture. The confinement chamber includes an access opening in one of the conductive chamber walls at a position spaced from the exit aperture and a base supports the confinement chamber in a position relative to structure for forming an ion beam. A cathode (124) is supported by the base and positioned to emit ionising electrons into the chamber interior for ionising the material in the interior of the confinement chamber. The cathode comprises a tubular conductive part extending through the access opening into the confinement chamber and supports a conductive cap (164) at one end which faces into the interior of the confinement chamber and includes an open end axially opposite the conductive cap. A filament (178) is supported by the base at a position inside the tubular conductive part for heating the cap to cause the ionising electrons to be emitted from the conductive cap into the confinement chamber. A mounting arm is spaced from the base by an insulator and supports the cathode within the access opening in a spaced relation to the conductive chamber wall. Another mounting structure is electrically isolated from the mounting arm and extends into the open end of the tubular conductive part to support the filament in spaced relation to the conductive cap of the cathode.
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公开(公告)号:SG53139A1
公开(公告)日:1998-09-28
申请号:SG1997004589
申请日:1997-12-19
Applicant: EATON CORP
IPC: C23C14/48 , H01J27/08 , H01J37/08 , H01J37/317 , H01L21/265
Abstract: An ion source (12) embodying the present invention is for use in an ion implanter (10). The ion source (12) comprises a gas confinement chamber (76) having conductive chamber walls (130) that bound a gas ionization zone (R). The gas confinement chamber (76) includes an exit opening (78) to allow ions to exit the chamber (76). A base (28) positions the gas confinement chamber (76) relative to structure for forming an ion beam (20) from ions exiting the gas confinement chamber (76). A portion of a cathode (124) extends into an opening (158) in the gas confinement chamber (76). The cathode (124) includes a cathode body (300) defining an interior region (C) in which a filament (178) is disposed. The cathode body (300) comprises an inner tubular member (162) a coaxial outer tubular member (160) and an endcap (164) having a reduced cross section body portion (324) with a radially extending rim (326). The endcap (164) is pressed into the inner tubular member (162). The filament (178) is energized to heat the endcap (164) which, in turn, emits electrons into the gas ionization zone (R). The filament (178) is protected from energized plasma in the gas ionization zone (R) by the cathode body (300).
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