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公开(公告)号：DE69530446D1
公开(公告)日：2003-05-28
申请号：DE69530446
申请日：1995-08-24
Applicant: TOSHIBA KAWASAKI KK , EBARA CORP
Inventor： HARADA MINORU , SHINJO RYOICHI , TSUJIMURA MANABU , NAKATA REMPEI , MIYAZAKI KUNIHIRO , KAJI NARUHIKO
IPC: C01B13/11
Abstract: In an improved ozonizer, at least those parts of an ozone gas delivery path located downstream of an ozone generating cell which are to come into contact with ozone gas are either composed of or coated with at least one ozone-resistant, Cr-free material selected from among aluminum (Al), an aluminum alloy, Teflon, fluorinated nickel, a nickel alloy, a silicon oxide based glass and a high-purity aluminium oxide. The ozonizer is capable of producing ozone that is not contaminated with Cr compounds at all or which is insufficiently contaminated to cause any practical problem in the fabrication of highly integrated semiconductor devices.
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Patent Agency Ranking
公开(公告)号：DE69530446T2
公开(公告)日：2004-03-25
申请号：DE69530446
申请日：1995-08-24
Applicant: TOSHIBA KAWASAKI KK , EBARA CORP
Inventor： HARADA MINORU , SHINJO RYOICHI , TSUJIMURA MANABU , NAKATA REMPEI , MIYAZAKI KUNIHIRO , KAJI NARUHIKO
IPC: C01B13/11
Abstract: In an improved ozonizer, at least those parts of an ozone gas delivery path located downstream of an ozone generating cell which are to come into contact with ozone gas are either composed of or coated with at least one ozone-resistant, Cr-free material selected from among aluminum (Al), an aluminum alloy, Teflon, fluorinated nickel, a nickel alloy, a silicon oxide based glass and a high-purity aluminium oxide. The ozonizer is capable of producing ozone that is not contaminated with Cr compounds at all or which is insufficiently contaminated to cause any practical problem in the fabrication of highly integrated semiconductor devices.
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公开(公告)号：DE69535054T2
公开(公告)日：2007-01-04
申请号：DE69535054
申请日：1995-08-23
Applicant: EBARA CORP , TOSHIBA KK
Inventor： HARADA MINORU , SHINJO RYOICHI , TSUJIMURA MANABU , NAKATA REMPEI , MIYAZAKI KUNIHIRO , KAJI NARUHIKO , NAKANO YUTAKA
Abstract: Ozonizer (10) which supplies a feed gas to ozone generating cell (11) under application of a high voltage and which delivers an ozone gas through an ozone gas transport path (consisting of pipes (14) and (15)) as it has been generated in said ozone generating cell (11) is characterized in that the ozone gas transport path is furnished with means for removing at least one of NOx, HF and SOx (in the drawings, the means is for removing NOx) and that the ozone gas from the ozone generating cell (11) is passed through said removing means, whereby at least one of NOx, HF and SOx in said ozone gas is removed before it is delivered to a subsequent stage. The product ozone is not contaminated with Cr compounds at all or insufficiently contaminated to cause any practical problems in the fabrication of highly integrated semiconductor devices. Alternatively, ozonizer (10) which comprises an ozone generating cell (11) having an inlet (8) for supplying a feed gas, high voltage applying means (35) and an outlet (29) for discharging the ozone generated, and ozone delivery paths (30) and (31) for delivering the generated ozone is characterized in that oxygen (1) supplemented with 10 - 20 vol% of carbon dioxide and/or carbon monoxide (2) is used as the feed gas. The thus produced ozone is significantly low in the level of Cr compounds and, hence, can suitably be used in the formation of metal oxides, in particular, silicon oxide.
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公开(公告)号：DE69601242T2
公开(公告)日：1999-05-20
申请号：DE69601242
申请日：1996-04-16
Applicant: EBARA CORP
Inventor： KAJI NARUHIKO , NAKANO YUTAKA , NAKATA REMPEI , HARADA MINORU , SHINJO RYOICHI , TSUJIMURA MANABU
Abstract: An ozone generating apparatus for producing highly pure ozone gas which can be used in the semiconductor manufacturing process. The ozone generating apparatus comprises a high voltage source, an ozone generating cell which generates ozone gas by supplying a material gas while applying a high voltage from the high voltage source, and a passage for delivering the generated ozone gas from the ozone generating cell to a desired location. The passage comprises a material which has a passivation film formed by a passivation treatment in a dry process. The oxide passivation film comprises chromium oxide film, iron oxide film or a composite film of chromium oxide and iron oxide.
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公开(公告)号：DE69601242D1
公开(公告)日：1999-02-11
申请号：DE69601242
申请日：1996-04-16
Applicant: EBARA CORP
Inventor： KAJI NARUHIKO , NAKANO YUTAKA , NAKATA REMPEI , HARADA MINORU , SHINJO RYOICHI , TSUJIMURA MANABU
Abstract: An ozone generating apparatus for producing highly pure ozone gas which can be used in the semiconductor manufacturing process. The ozone generating apparatus comprises a high voltage source, an ozone generating cell which generates ozone gas by supplying a material gas while applying a high voltage from the high voltage source, and a passage for delivering the generated ozone gas from the ozone generating cell to a desired location. The passage comprises a material which has a passivation film formed by a passivation treatment in a dry process. The oxide passivation film comprises chromium oxide film, iron oxide film or a composite film of chromium oxide and iron oxide.
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公开(公告)号：DE69535054D1
公开(公告)日：2006-07-27
申请号：DE69535054
申请日：1995-08-23
Applicant: EBARA CORP , TOSHIBA KK
Inventor： HARADA MINORU , SHINJO RYOICHI , TSUJIMURA MANABU , NAKATA REMPEI , MIYAZAKI KUNIHIRO , KAJI NARUHIKO , NAKANO YUTAKA
Abstract: Ozonizer (10) which supplies a feed gas to ozone generating cell (11) under application of a high voltage and which delivers an ozone gas through an ozone gas transport path (consisting of pipes (14) and (15)) as it has been generated in said ozone generating cell (11) is characterized in that the ozone gas transport path is furnished with means for removing at least one of NOx, HF and SOx (in the drawings, the means is for removing NOx) and that the ozone gas from the ozone generating cell (11) is passed through said removing means, whereby at least one of NOx, HF and SOx in said ozone gas is removed before it is delivered to a subsequent stage. The product ozone is not contaminated with Cr compounds at all or insufficiently contaminated to cause any practical problems in the fabrication of highly integrated semiconductor devices. Alternatively, ozonizer (10) which comprises an ozone generating cell (11) having an inlet (8) for supplying a feed gas, high voltage applying means (35) and an outlet (29) for discharging the ozone generated, and ozone delivery paths (30) and (31) for delivering the generated ozone is characterized in that oxygen (1) supplemented with 10 - 20 vol% of carbon dioxide and/or carbon monoxide (2) is used as the feed gas. The thus produced ozone is significantly low in the level of Cr compounds and, hence, can suitably be used in the formation of metal oxides, in particular, silicon oxide.
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