Abstract:
A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).
Abstract:
A polishing apparatus has two parallel processing lines that enables to carry out efficient parallel processing by minimizing the idle time for the turntable and maximizing the through-put. The polishing apparatus comprises at least two processing lines extending in parallel from a storage section. Each line is provided with a cleaning unit (18a, 18b) and a polishing unit (10a, 10b), a temporary storage station (20) disposed between the cleaning unit (18a, 18b) and the polishing unit (10a, 10b) and shared by the processing lines. At least two robotic devices (22, 24) are disposed on each of the processing lines for transferring workpieces among the temporary storage station (20), the polishing unit (10a, 10b) and the cleaning unit (18a, 18b).
Abstract:
A polishing solution feeder capable of stably feeding a polishing solution having a predetermined abrasive grain size distribution to a polisher (22), including an ultrasonic oscillator (72) in at least a part of a polishing solution passage through which a polishing solution flows.
Abstract:
The invention relates to a polisher for polishing a workpiece, such as a semiconductor wafer, so that it may have a flat mirror finish. The polisher comprises a polisher table (1) with a polishing face, and a top ring (3). A workpiece is placed between the polisher table (1) and the top ring (3) and polished by application of a predetermined pressure. The polisher includes at least two dressing units equipped with dressers (7, 11) that are in contact with the surface of polishing cloth to dress the polishing face.
Abstract:
The present invention relates to a polishing apparatus for polishing a workpiece, such as a semiconductor wafer, to a flat mirror finish. The polishing apparatus comprises a polishing table having a polishing surface, and a top ring, and the workpiece is interposed between the polishing table and the top ring and pressed at a predetermined pressure to polish the workpiece. The polishing apparatus comprises at least two dressing units for dressing the polishing surface by being brought into contact with the polishing surface, which is a surface of a polishing cloth.
Abstract:
A polishing apparatus for polishing a surface of a workpiece (6), comprising: a turntable (20); a top ring (3) for supporting the workpiece to be polished and pressing the workpiece against said turntable; and a transferring device (66) for transferring the workpiece to and from said top ring, said transferring device having holding means for holding the workpiece, said hold means being raised when the workpiece is transferred to and from said top ring located above said transferring device.
Abstract:
In an improved ozonizer, at least those parts of an ozone gas delivery path located downstream of an ozone generating cell which are to come into contact with ozone gas are either composed of or coated with at least one ozone-resistant, Cr-free material selected from among aluminum (Al), an aluminum alloy, Teflon, fluorinated nickel, a nickel alloy, a silicon oxide based glass and a high-purity aluminium oxide. The ozonizer is capable of producing ozone that is not contaminated with Cr compounds at all or which is insufficiently contaminated to cause any practical problem in the fabrication of highly integrated semiconductor devices.
Abstract:
[PROBLEMS] To provide an electrode that is stable in liquid and is capable of treating a large volume of liquid and a small electrode that is capable of treating a large volume of liquid at high speed; provide a liquid treating apparatus and method of liquid treatment in which the electrode is used; provide an electrode material being resistant to damaging by thermal stress; and provide an electrode, liquid treating apparatus and method of liquid treatment in which the electrode material is used. [MEANS FOR SOLVING PROBLEMS] An electrode of configuration resulting from first coating solid pieces of 5 to 60 mm size with conductive diamond, supporting them on supports and bringing the same into contact with each other so as to realize current passage as a whole is used in various electrochemical treatments. Also, use is made of an electrode comprising conductive substrate (1), coating layer (2) covering the conductive substrate and conductive diamond particles (3) immobilized on the coating layer characterized in that part of each of the conductive diamond particles is in contact with the conductive substrate while another part thereof is exposed on the surface of the coating layer. Further, use is made of an electrode material comprising a columnar or tubular substrate having its whole side surface coated with conductive diamond.
Abstract:
An apparatus for plating a substrate by filling a fine interconnection pattern (recess) formed in a semiconductor substrate with a metal such as copper (Cu) comprises a substrate holding section (36) for horizontally holding and rotating a substrate so oriented that the surface to be plate faces up, a sealer (90) that comes into contact with the periphery of the surface to be plated of the held substrate to seal the periphery water-tightly, and a cathode (88) that comes into contact with the substrate to supply current thereto, and further comprises a cathode section (38) rotatable with the substrate holding section (36), an electrode arm section (30) provided horizontally and vertically movably above the cathode section (38) and having an anode (98) oriented down, and plating solution injecting means for injecting a plating solution into the space between the surface to be plated of the held substrate and the anode of the electrode arm section (30) brought near to the surface to be plated. Therefore, the processings including the plating and its collateral processings are carried out by means of a single unit. A method for plating a substrate is also disclosed.