中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

18 records (took 0.021 seconds)

    DIAMOND FILM-FORMING SILICON AND ITS MANUFACTURING METHOD
    1.
    发明专利
    DIAMOND FILM-FORMING SILICON AND ITS MANUFACTURING METHOD 未知

    公开(公告)号：AU2003292745A1

    公开(公告)日：2004-07-22

    申请号：AU2003292745

    申请日：2003-12-24

    Applicant: EBARA CORP

    Inventor： SERIKAWA ROBERTO MASAHIRO ,  ISHIKAWA NAOKI ,  MISHIMA TAKAHIRO ,  FUJIMURA HIROYUKI

    IPC: C30B29/06 ,  C23C16/27 ,  C23C16/54 ,  C30B25/02 ,  C30B25/18 ,  C30B29/04

    Abstract: The present invention intends to provide a diamond-coated silicon to be used in an industrially applicable diamond electrode. A diamond-coated silicon comprising a silicon substrate having a thickness of 500 mum or less is coated at least partially with electrically conductive diamond. The silicon substrate having a thickness of 500 mum or less is manufactured by the plate-like crystal growth process, and then the silicon substrate is coated with the electrically conductive diamond by the chemical vapor deposition process to manufacture the diamond-coated silicon. The diamond-coated silicon is flexible and can be stuck to an electrically conductive support substrate, and thereby a large area electrode and a three-dimensional electrode structure can be readily obtained.

    DIAMOND FILM-FORMING SILICON AND ITS MANUFACTURING METHOD
    2.
    发明专利
    DIAMOND FILM-FORMING SILICON AND ITS MANUFACTURING METHOD 未知

    公开(公告)号：AU2003292744A1

    公开(公告)日：2004-07-22

    申请号：AU2003292744

    申请日：2003-12-24

    Applicant: EBARA CORP

    Inventor： FUJIMURA HIROYUKI ,  SERIKAWA ROBERTO MASAHIRO ,  ISHIKAWA NAOKI ,  MISHIMA TAKAHIRO

    IPC: C30B29/06 ,  C23C16/27 ,  C23C16/54 ,  C30B25/02 ,  C30B25/18 ,  C30B29/04

    Abstract: The present invention intends to provide a diamond-coated silicon to be used in an industrially applicable diamond electrode. A diamond-coated silicon comprising a silicon substrate having a thickness of 500 mum or less is coated at least partially with electrically conductive diamond. The silicon substrate having a thickness of 500 mum or less is manufactured by the plate-like crystal growth process, and then the silicon substrate is coated with the electrically conductive diamond by the chemical vapor deposition process to manufacture the diamond-coated silicon. The diamond-coated silicon is flexible and can be stuck to an electrically conductive support substrate, and thereby a large area electrode and a three-dimensional electrode structure can be readily obtained.

    3.
    发明专利
    未知

    公开(公告)号：DE10393964T5

    公开(公告)日：2005-12-29

    申请号：DE10393964

    申请日：2003-12-24

    Applicant: EBARA CORP

    Inventor： FUJIMURA HIROYUKI ,  SERIKAWA ROBERTO MASAHIRO ,  ISHIKAWA NAOKI ,  MISHIMA TAKAHIRO

    IPC: C30B29/06 ,  C23C16/27 ,  C23C16/54 ,  C30B25/02 ,  C30B25/18 ,  C30B29/04

    Abstract: The present invention intends to provide a diamond-coated silicon to be used in an industrially applicable diamond electrode. A diamond-coated silicon comprising a silicon substrate having a thickness of 500 mum or less is coated at least partially with electrically conductive diamond. The silicon substrate having a thickness of 500 mum or less is manufactured by the plate-like crystal growth process, and then the silicon substrate is coated with the electrically conductive diamond by the chemical vapor deposition process to manufacture the diamond-coated silicon. The diamond-coated silicon is flexible and can be stuck to an electrically conductive support substrate, and thereby a large area electrode and a three-dimensional electrode structure can be readily obtained.

    5.
    发明专利
    未知

    公开(公告)号：DE10393956T5

    公开(公告)日：2007-03-15

    申请号：DE10393956

    申请日：2003-12-24

    Applicant: EBARA CORP

    Inventor： FUJIMURA HIROYUKI ,  SERIKAWA ROBERTO MASAHIRO ,  ISHIKAWA NAOKI ,  MISHIMA TAKAHIRO

    IPC: C30B29/04 ,  C30B29/06 ,  C23C16/27 ,  C23C16/54 ,  C30B25/02 ,  C30B25/18

    Abstract: The present invention intends to provide a diamond-coated silicon to be used in an industrially applicable diamond electrode. A diamond-coated silicon comprising a silicon substrate having a thickness of 500 mum or less is coated at least partially with electrically conductive diamond. The silicon substrate having a thickness of 500 mum or less is manufactured by the plate-like crystal growth process, and then the silicon substrate is coated with the electrically conductive diamond by the chemical vapor deposition process to manufacture the diamond-coated silicon. The diamond-coated silicon is flexible and can be stuck to an electrically conductive support substrate, and thereby a large area electrode and a three-dimensional electrode structure can be readily obtained.

Patent Agency Ranking