公开(公告)号：US20130237033A1

公开(公告)日：2013-09-12

申请号：US13868500

申请日：2013-04-23

Applicant: EBARA CORPORATION

Inventor： Masayuki NAKANISHI ,  Tetsuji TOGAWA ,  Kenya ITO ,  Masaya SEKI ,  Kenji IWADE ,  Takeo KUBOTA

IPC: H01L21/02

CPC classification number: H01L21/02038 ,  B24B9/065 ,  B24B21/002 ,  B24B37/042 ,  H01L21/02087 ,  H01L21/304 ,  H01L21/76256

Abstract: A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.

Abstract translation: 一种制造半导体器件的方法使得可以在抛光条件下，在特别适用于沉积膜的抛光条件和沉积膜下面的硅的抛光条件下，用研磨带有效地抛光硅衬底的周边部分。 该方法包括在第一旋转速度旋转器件基板的同时将第一研磨带压靠在具有沉积膜的器件基板的周边部分上，同时以第一转速旋转器件基板，从而去除位于器件基板的周边部分中的沉积膜， 暴露下面的硅。 在第二旋转速度旋转器件基板的同时，将第二研磨带压在位于器件基板的周边部分中的暴露的硅上，从而将硅抛光到预定的深度。