Abstract:
The polishing apparatus has a polishing unit capable of forming a right-angled cross section by polishing a peripheral portion of the substrate. The polishing unit includes a polishing head having a pressing member configured to press a polishing tape against the peripheral portion of the substrate from above, a tape supply and recovery mechanism configured to supply the polishing tape to the polishing head and to recover the polishing tape from the polishing head, a first moving mechanism configured to move the polishing head in a radial direction of the substrate, and a second moving mechanism configured to move the tape supply and recovery mechanism in the radial direction of the substrate. The guide rollers are arranged such that the polishing tape extends parallel to a tangential direction of the substrate and a polishing surface of the polishing tape is parallel to a surface of the substrate.
Abstract:
A method of detecting an abnormality in polishing of a substrate is provided. The method includes: rotating the substrate; pressing a polishing tool against an edge portion of the substrate to polish the edge portion; measuring a position of the polishing tool relative to a surface of the substrate; determining an amount of polishing of the substrate from the position of the polishing tool; calculating a polishing rate from the amount of polishing of the substrate; and judging that an abnormality in polishing of the edge portion of the substrate has occurred if the polishing rate is out of a predetermined range.
Abstract:
To terminate polishing at an appropriate position, an end point position of the polishing is sensed. According to one embodiment, a method that chemomechanically polishes a substrate including a functional chip is provided. The method includes: a step of disposing the functional chip on the substrate; a step of disposing an end point sensing element on the substrate; a step of sealing the substrate on which the functional chip and the end point sensing element are disposed with an insulating material; a step of polishing the insulating material; and a step of sensing an end point of the polishing based on the end point sensing element while the insulating material is polished.
Abstract:
A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.
Abstract:
An apparatus and method of polishing a substrate is described. The polishing includes: rotating a substrate; pressing a first polishing tool against an edge portion of the substrate to polish the edge portion; and pressing a second polishing tool against the edge portion of the substrate to polish the edge portion. The second polishing tool is located more inwardly than the first polishing tool with respect to a radial direction of the substrate. The first polishing tool has a polishing surface rougher than a polishing surface of the second polishing tool.
Abstract:
A polishing method includes rotating a substrate, performing a first polishing process of pressing a polishing tape against an edge portion of the substrate by a pressing member, with a portion of the polishing tape projecting from the pressing member inwardly in a radial direction of the substrate, to polish the edge portion of the substrate and bend the portion of the polishing tape along the pressing member, and performing a second polishing process of pressing the bent portion of the polishing tape inwardly in the radial direction of the substrate by the pressing member to further polish the edge portion of the substrate.
Abstract:
The polishing apparatus has a polishing unit capable of polishing a peripheral portion of the substrate to form a right-angled cross section. The polishing apparatus includes: a substrate holder that holds and rotates the substrate; guide rollers that support a polishing tape; and a polishing head having a pressing member that presses an edge of the polishing tape against the peripheral portion of the substrate from above. The guide rollers are arranged such that the polishing tape extends parallel to a tangential direction of the substrate and a polishing surface of the polishing tape is parallel to a surface of the substrate. The substrate holder includes: a holding stage that holds the substrate; and a supporting stage that supports a lower surface of the peripheral portion of the substrate in its entirety. The supporting stage rotates in unison with the holding stage.
Abstract:
A substrate processing apparatus capable of accurately aligning a center of a substrate, such as a wafer, with an axis of a substrate stage and capable of processing the substrate without bending the substrate is disclosed. The substrate processing apparatus includes a first substrate stage having a first substrate-holding surface configured to hold a first region in a lower surface of the substrate, a second substrate stage having a second substrate-holding surface configured to hold a second region in the lower surface of the substrate, a stage elevator configured to move the first substrate-holding surface between an elevated position higher than the second substrate-holding surface and a lowered position lower than the second substrate-holding surface, and an aligner configured to measure an amount of eccentricity of a center of the substrate from the axis of the second substrate stage and align the center of the substrate with the axis of the second substrate stage.
Abstract:
A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.
Abstract:
In a substrate polishing apparatus where a polishing liquid passes through inside a rotary joint, the rotary joint requires maintenance. There is provided a substrate polishing apparatus that includes: a polishing head for holding a substrate; a rotary table that has a surface to which a first opening portion is provided; a polishing liquid discharge mechanism disposed to the rotary table; and a controller configured to control at least the polishing liquid discharge mechanism. The polishing liquid discharge mechanism includes a first cylinder, a first piston, and a driving mechanism that drives the first piston. The first opening portion is communicated with a liquid holding space defined by the first cylinder and the first piston. The controller controls the driving of the first piston by the driving mechanism to increase and decrease a volume of the liquid holding space.