公开(公告)号：US20150298283A1

公开(公告)日：2015-10-22

申请号：US14690306

申请日：2015-04-17

Applicant: EBARA CORPORATION

Inventor： Koji MARUYAMA

IPC: B24B37/013 ,  B24B49/12 ,  B24B49/10

CPC classification number: B24B37/013 ,  B24B49/105 ,  B24B49/12

Abstract: A substrate treatment device which can detect a metal film remaining as a residue on a polished surface of a substrate after polishing with high accuracy is provided. The substrate treatment device includes a polishing section 3 that polishes a surface to be polished of the substrate to remove the metal film formed on the surface to be polished, a cleaning section 4 that cleans and dries the substrate polished by the polishing section 3, and a temporary table 180 on which the substrate is temporarily placed after being polished by the polishing section 3. Sensors 8, 9 for detecting the metal film remaining on the polished surface of the substrate are provided at the temporary table 180.

Abstract translation: 提供一种能够高精度地研磨后能够在基板的研磨面上检测残留的金属膜的基板处理装置。 基板处理装置包括：抛光部3，其对基板的被抛光表面进行抛光，以除去形成在待抛光表面上的金属膜;清洗部4，其对由研磨部3抛光的基板进行清洗和干燥;以及 在抛光部分3抛光之后临时放置基板的临时工作台180设置在临时工作台180处，用于检测残留在基板抛光表面上的金属膜的传感器8,9。

公开(公告)号：US20140004773A1

公开(公告)日：2014-01-02

申请号：US14017620

申请日：2013-09-04

Applicant: KABUSHIKI KAISHA TOSHIBA ,  EBARA CORPORATION

Inventor： Noburu SHIMIZU ,  Shinro OHTA ,  Koji MARUYAMA ,  Yoichi KOBAYASHI ,  Ryuichiro MITANI ,  Shunsuke NAKAI ,  Atsushi SHIGETA

IPC: B24B49/12 ,  B24B49/04 ,  B24B37/013

CPC classification number: B24B49/04 ,  B24B37/013 ,  B24B49/12 ,  B24B49/16 ,  B24D7/12 ,  G01B11/0675 ,  G01N21/55 ,  G01N21/9501 ,  G05B19/406 ,  G05B19/4065 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

Abstract translation: 处理终点检测方法通过计算诸如基板的工件（抛光对象）的表面的特性值来检测处理终点的定时（例如，抛光停止，改变抛光条件）。 该方法包括：基于频谱波形，使用基准工件或模拟计算，产生指示处理终点处的反射强度与波长之间的关系的光谱波形，选择局部最大值的波长和局部最小值的局部最小值 反射强度，从所选择的波长的反射强度计算相对于要处理的表面的特征值，将作为处理终点的处理终点处的特征值的特征时间变化设定为特征值 并且通过在工件的加工期间检测特征点来检测工件的加工终点。

公开(公告)号：US20180308716A1

公开(公告)日：2018-10-25

申请号：US16019415

申请日：2018-06-26

Applicant: EBARA CORPORATION

Inventor： Takeshi SAKURAI ,  Eiji HIRAI ,  Kaoru HAMAURA ,  Mitsuru MIYAZAKI ,  Koji MARUYAMA

IPC: H01L21/67 ,  B08B1/00

CPC classification number: H01L21/67046 ,  B08B1/007 ,  H01L21/67051

Abstract: A substrate cleaning device 1 includes a substrate holding unit 10 configured to hold a substrate W, a first cleaning unit 11 having a first cleaning member 11a caused to come into contact with a first surface WA of the substrate W held by the substrate holding unit 10 to clean the first surface WA, a second cleaning unit 12 having a second cleaning member 12a caused to come into contact with the first surface WA of the substrate W held by the substrate holding unit 10 to clean the first surface WA, and a controller 50 configured to control the first and second cleaning units 11, 12 so that, when any one of the first cleaning member 11a and the second cleaning member 12a cleans the first surface WA of the substrate W held by the substrate holding unit 10, the other cleaning member is at a position apart from the substrate W held by the substrate holding unit 10.