公开(公告)号：US20160176011A1

公开(公告)日：2016-06-23

申请号：US15058710

申请日：2016-03-02

Applicant: EBARA CORPORATION

Inventor： Makoto FUKUSHIMA ,  Tetsuji TOGAWA ,  Shingo TOGASHI ,  Tomoshi INOUE

IPC: B24B37/20

CPC classification number: B24B37/20 ,  B24B37/005 ,  B24B37/042 ,  B24B37/32 ,  B24B49/10 ,  B24B49/12

Abstract: A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.

Abstract translation: 抛光方法用于将半导体晶片等基板研磨成平面镜面。 通过研磨装置研磨基板的方法包括具有研磨面的研磨台（100），用于保持基板并将基板压靠在研磨面上的顶环（1），以及可升降机构 沿垂直方向移动顶环（1）。 在将衬底压靠在抛光表面之前，将顶环（1）移动到第一高度，然后在衬底被压靠在抛光表面上之后将顶环（1）移动到第二高度。

公开(公告)号：US20190240801A1

公开(公告)日：2019-08-08

申请号：US16386681

申请日：2019-04-17

Applicant: EBARA CORPORATION

Inventor： Makoto FUKUSHIMA ,  Tetsuji TOGAWA ,  Shingo TOGASHI ,  Tomoshi INOUE

IPC: B24B37/20 ,  B24B37/005 ,  B24B37/34 ,  B24B37/04 ,  B24B49/12 ,  B24B49/10 ,  B24B37/32 ,  B24B37/30

CPC classification number: B24B37/20 ,  B24B37/005 ,  B24B37/042 ,  B24B37/30 ,  B24B37/32 ,  B24B37/34 ,  B24B37/345 ,  B24B49/10 ,  B24B49/12

Abstract: A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.