POLISHING METHOD, AND POLISHING APPARATUS
    2.
    发明公开

    公开(公告)号:US20240181594A1

    公开(公告)日:2024-06-06

    申请号:US18554643

    申请日:2022-01-17

    CPC classification number: B24B37/015 B24B37/013 B24B49/04 B24B49/14

    Abstract: The present application relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer, while pressing the substrate against a polishing surface of a polishing pad, and more particularly to a polishing method and a polishing apparatus for polishing a substrate while regulating a polishing load based on measurement values of a film-thickness measuring device. The polishing method includes: controlling a temperature of a polishing surface of a polishing pad to a predetermined temperature by use of a pad-temperature regulating apparatus; and polishing a substrate while controlling a polishing load for pressing the substrate against the polishing surface based on measurement values from a film-thickness measuring device provided in the polishing pad.

    POLISHING METHOD AND POLISHING APPARATUS
    4.
    发明申请

    公开(公告)号:US20190134774A1

    公开(公告)日:2019-05-09

    申请号:US16179504

    申请日:2018-11-02

    Abstract: A polishing method capable of improving a spatial resolution of a film-thickness measurement without changing a measuring cycle of a film-thickness sensor and without increasing an amount of measurement data is disclosed. The polishing method includes: rotating a first film-thickness sensor and a second film-thickness sensor together with a polishing table, the first film-thickness sensor and the second film-thickness sensor being located at the same distance from a center of the polishing table; causing the first film-thickness sensor and the second film-thickness sensor to generate signal values indicating film thicknesses at measurement points on a surface of a substrate, while a polishing head is pressing the substrate against a polishing pad on the rotating polishing table, the measurement points being located at different distances from a center of the substrate; and controlling polishing pressure applied from the polishing head to the substrate based on the signal values generated by the first film-thickness sensor and the second film-thickness sensor.

    POLISHING METHOD AND POLISHING APPARATUS
    6.
    发明公开

    公开(公告)号:US20230381919A1

    公开(公告)日:2023-11-30

    申请号:US18232278

    申请日:2023-08-09

    CPC classification number: B24B49/12 B24B37/013 H01L21/304

    Abstract: A substrate polishing method capable of reducing an influence of variation in spectrum of reflected light from a substrate, such as a wafer, and determining an accurate film thickness is disclosed. The method includes: polishing a surface of a substrate by pressing the substrate against a polishing pad on a rotating polishing table; producing a spectrum of reflected light from the surface of the substrate each time the polishing table makes one rotation; creating a three-dimensional data containing a plurality of spectra arranged along polishing time; and determining a film thickness of the substrate based on the three-dimensional data.

    POLISHING METHOD AND POLISHING APPARATUS
    7.
    发明申请

    公开(公告)号:US20190118333A1

    公开(公告)日:2019-04-25

    申请号:US16166946

    申请日:2018-10-22

    Abstract: A polishing method which can acquire an actual position of a film-thickness measurement point, and can therefore apply an optimum polishing pressure to a substrate such as a wafer is disclosed. The method includes: causing a substrate detection sensor to generate substrate detection signals in a preset cycle and causing a film-thickness sensor to generate a film-thickness signal at a predetermined measurement point during polishing of the substrate while the substrate detection sensor and the film-thickness sensor are moving across the surface of the substrate; calculating an angle of eccentricity of a center of the substrate relative to a center of the polishing head from the number of substrate detection signals; correcting a position of the predetermined measurement point based on the angle of eccentricity; and controlling polishing pressure at which the polishing head presses the substrate based on the film-thickness signal and the corrected position of the predetermined measurement point.

Patent Agency Ranking