公开(公告)号：US20240359290A1

公开(公告)日：2024-10-31

申请号：US18642397

申请日：2024-04-22

Applicant: EBARA CORPORATION

Inventor： Keita YAGI ,  Toshimitsu SASAKI ,  Yoichi SHIOKAWA ,  Yuki WATANABE ,  Masashi KABASAWA

IPC: B24B49/04 ,  B24B49/12

CPC classification number: B24B49/04 ,  B24B49/12

Abstract: A polishing method includes: during polishing of the workpiece, creating a reference spectrum history and a monitoring spectrum history by repeatedly producing a reference spectrum and a monitoring spectrum at two points on the workpiece; calculating a plurality of reference history differences that are differences between a latest monitoring spectrum and a plurality of reference spectra in the reference spectrum history; calculating a plurality of monitoring history differences that are differences between a latest reference spectrum and a plurality of monitoring spectra in the monitoring spectrum history; calculating a film-thickness difference between a monitoring point and a reference point based on a local minimum point of a reference history difference or a monitoring history difference.

公开(公告)号：US20240181594A1

公开(公告)日：2024-06-06

申请号：US18554643

申请日：2022-01-17

Applicant: EBARA CORPORATION

Inventor： Masashi KABASAWA ,  Toshimitsu SASAKI ,  Yoichi SHIOKAWA ,  Keita YAGI ,  Yuki WATANABE ,  Nachiketa CHAUHAN

IPC: B24B37/015 ,  B24B37/013 ,  B24B49/04 ,  B24B49/14

CPC classification number: B24B37/015 ,  B24B37/013 ,  B24B49/04 ,  B24B49/14

Abstract: The present application relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer, while pressing the substrate against a polishing surface of a polishing pad, and more particularly to a polishing method and a polishing apparatus for polishing a substrate while regulating a polishing load based on measurement values of a film-thickness measuring device. The polishing method includes: controlling a temperature of a polishing surface of a polishing pad to a predetermined temperature by use of a pad-temperature regulating apparatus; and polishing a substrate while controlling a polishing load for pressing the substrate against the polishing surface based on measurement values from a film-thickness measuring device provided in the polishing pad.

公开(公告)号：US20240217060A1

公开(公告)日：2024-07-04

申请号：US18395191

申请日：2023-12-22

Applicant: EBARA CORPORATION

Inventor： Masashi KABASAWA ,  Keita YAGI ,  Yoichi SHIOKAWA ,  Toshimitsu SASAKI ,  Kohei EGAWA

IPC: B24B49/03 ,  B24B49/04

CPC classification number: B24B49/03 ,  B24B49/04

Abstract: A substrate polishing device includes a height detection unit configured to measure a surface height of a polishing member, and a cutting rate calculation unit configured to calculate a cutting rate of the polishing member based on the surface height. The cutting rate calculation unit corrects the current cutting rate based on the cutting rate calculated in the past when the calculated current cutting rate falls outside a search range.

公开(公告)号：US20190134774A1

公开(公告)日：2019-05-09

申请号：US16179504

申请日：2018-11-02

Applicant: EBARA CORPORATION

Inventor： Keita YAGI ,  Toshimitsu SASAKI

IPC: B24B37/005 ,  B24B37/34 ,  B24B49/12 ,  B24B37/20 ,  B24B49/10 ,  H01L21/67 ,  H01L21/66

Abstract: A polishing method capable of improving a spatial resolution of a film-thickness measurement without changing a measuring cycle of a film-thickness sensor and without increasing an amount of measurement data is disclosed. The polishing method includes: rotating a first film-thickness sensor and a second film-thickness sensor together with a polishing table, the first film-thickness sensor and the second film-thickness sensor being located at the same distance from a center of the polishing table; causing the first film-thickness sensor and the second film-thickness sensor to generate signal values indicating film thicknesses at measurement points on a surface of a substrate, while a polishing head is pressing the substrate against a polishing pad on the rotating polishing table, the measurement points being located at different distances from a center of the substrate; and controlling polishing pressure applied from the polishing head to the substrate based on the signal values generated by the first film-thickness sensor and the second film-thickness sensor.

公开(公告)号：US20240217062A1

公开(公告)日：2024-07-04

申请号：US18395059

申请日：2023-12-22

Applicant: EBARA CORPORATION

Inventor： Masashi KABASAWA ,  Yoichi SHIOKAWA ,  Keita YAGI ,  Toshimitsu SASAKI ,  Kohei EGAWA

IPC: B24B53/017 ,  B24B37/04 ,  B24B49/00

CPC classification number: B24B53/017 ,  B24B37/042 ,  B24B49/006

Abstract: An object of the present disclosure is to more appropriately control the moving speed of a dresser. A substrate polishing apparatus includes a dresser that moves in a plurality of scan areas set on a polishing member, and a moving speed calculation unit that calculates a moving speed of the dresser in each of the scan areas based on an evaluation index including a deviation from a stay time of the dresser in each of the scan areas on a basis of a previous recipe.

公开(公告)号：US20230381919A1

公开(公告)日：2023-11-30

申请号：US18232278

申请日：2023-08-09

Applicant: EBARA CORPORATION

Inventor： Keita YAGI ,  Yoichi SHIOKAWA ,  Toshimitsu SASAKI ,  Yuki WATANABE ,  Nachiketa CHAUHAN

IPC: B24B49/12 ,  B24B37/013

CPC classification number: B24B49/12 ,  B24B37/013 ,  H01L21/304

Abstract: A substrate polishing method capable of reducing an influence of variation in spectrum of reflected light from a substrate, such as a wafer, and determining an accurate film thickness is disclosed. The method includes: polishing a surface of a substrate by pressing the substrate against a polishing pad on a rotating polishing table; producing a spectrum of reflected light from the surface of the substrate each time the polishing table makes one rotation; creating a three-dimensional data containing a plurality of spectra arranged along polishing time; and determining a film thickness of the substrate based on the three-dimensional data.

公开(公告)号：US20190118333A1

公开(公告)日：2019-04-25

申请号：US16166946

申请日：2018-10-22

Applicant: EBARA CORPORATION

Inventor： Keita YAGI ,  Yuki WATANABE ,  Toshimitsu SASAKI

IPC: B24B37/013 ,  B24B37/04 ,  B24B49/10 ,  B24B49/16

Abstract: A polishing method which can acquire an actual position of a film-thickness measurement point, and can therefore apply an optimum polishing pressure to a substrate such as a wafer is disclosed. The method includes: causing a substrate detection sensor to generate substrate detection signals in a preset cycle and causing a film-thickness sensor to generate a film-thickness signal at a predetermined measurement point during polishing of the substrate while the substrate detection sensor and the film-thickness sensor are moving across the surface of the substrate; calculating an angle of eccentricity of a center of the substrate relative to a center of the polishing head from the number of substrate detection signals; correcting a position of the predetermined measurement point based on the angle of eccentricity; and controlling polishing pressure at which the polishing head presses the substrate based on the film-thickness signal and the corrected position of the predetermined measurement point.