POLISHING METHOD, AND POLISHING APPARATUS
    4.
    发明公开

    公开(公告)号:US20240181594A1

    公开(公告)日:2024-06-06

    申请号:US18554643

    申请日:2022-01-17

    CPC classification number: B24B37/015 B24B37/013 B24B49/04 B24B49/14

    Abstract: The present application relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer, while pressing the substrate against a polishing surface of a polishing pad, and more particularly to a polishing method and a polishing apparatus for polishing a substrate while regulating a polishing load based on measurement values of a film-thickness measuring device. The polishing method includes: controlling a temperature of a polishing surface of a polishing pad to a predetermined temperature by use of a pad-temperature regulating apparatus; and polishing a substrate while controlling a polishing load for pressing the substrate against the polishing surface based on measurement values from a film-thickness measuring device provided in the polishing pad.

    POLISHING METHOD AND POLISHING APPARATUS
    5.
    发明公开

    公开(公告)号:US20230219187A1

    公开(公告)日:2023-07-13

    申请号:US18187786

    申请日:2023-03-22

    Inventor: Masashi KABASAWA

    CPC classification number: B24B37/015 B24B37/013 B24B37/04

    Abstract: A polishing method capable of terminating polishing of a substrate, such as a wafer, at a preset polishing time is disclosed. The polishing method includes: polishing a substrate by pressing the substrate against a polishing surface of a polishing pad, while regulating a temperature of the polishing surface by a heat exchanger; calculating a target polishing rate required for an actual polishing time to coincide with a target polishing time, the actual polishing time being a time duration from start of polishing the substrate until a film thickness of the substrate reaches a target thickness; determining a target temperature of the polishing surface that can achieve the target polishing rate; and during polishing of the substrate, changing a temperature of the polishing surface to the target temperature by the heat exchanger.

    POLISHING APPARATUS
    6.
    发明申请

    公开(公告)号:US20210114164A1

    公开(公告)日:2021-04-22

    申请号:US17065787

    申请日:2020-10-08

    Abstract: There is disclosed a polishing apparatus which can regulate a surface temperature of the polishing pad without causing a defect such as a scratch on a substrate such as a wafer. The polishing apparatus includes: a non-contact type pad-temperature regulating device; a pad-temperature measuring device. The pad-temperature measuring device is arranged adjacent to the pad-temperature regulating device and on a downstream side of the pad-temperature regulating device in a rotation direction of a polishing table.

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