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1.
公开(公告)号:US20240359290A1
公开(公告)日:2024-10-31
申请号:US18642397
申请日:2024-04-22
Applicant: EBARA CORPORATION
Inventor: Keita YAGI , Toshimitsu SASAKI , Yoichi SHIOKAWA , Yuki WATANABE , Masashi KABASAWA
Abstract: A polishing method includes: during polishing of the workpiece, creating a reference spectrum history and a monitoring spectrum history by repeatedly producing a reference spectrum and a monitoring spectrum at two points on the workpiece; calculating a plurality of reference history differences that are differences between a latest monitoring spectrum and a plurality of reference spectra in the reference spectrum history; calculating a plurality of monitoring history differences that are differences between a latest reference spectrum and a plurality of monitoring spectra in the monitoring spectrum history; calculating a film-thickness difference between a monitoring point and a reference point based on a local minimum point of a reference history difference or a monitoring history difference.
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2.
公开(公告)号:US20240217060A1
公开(公告)日:2024-07-04
申请号:US18395191
申请日:2023-12-22
Applicant: EBARA CORPORATION
Inventor: Masashi KABASAWA , Keita YAGI , Yoichi SHIOKAWA , Toshimitsu SASAKI , Kohei EGAWA
Abstract: A substrate polishing device includes a height detection unit configured to measure a surface height of a polishing member, and a cutting rate calculation unit configured to calculate a cutting rate of the polishing member based on the surface height. The cutting rate calculation unit corrects the current cutting rate based on the cutting rate calculated in the past when the calculated current cutting rate falls outside a search range.
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3.
公开(公告)号:US20240217062A1
公开(公告)日:2024-07-04
申请号:US18395059
申请日:2023-12-22
Applicant: EBARA CORPORATION
Inventor: Masashi KABASAWA , Yoichi SHIOKAWA , Keita YAGI , Toshimitsu SASAKI , Kohei EGAWA
IPC: B24B53/017 , B24B37/04 , B24B49/00
CPC classification number: B24B53/017 , B24B37/042 , B24B49/006
Abstract: An object of the present disclosure is to more appropriately control the moving speed of a dresser. A substrate polishing apparatus includes a dresser that moves in a plurality of scan areas set on a polishing member, and a moving speed calculation unit that calculates a moving speed of the dresser in each of the scan areas based on an evaluation index including a deviation from a stay time of the dresser in each of the scan areas on a basis of a previous recipe.
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公开(公告)号:US20240181594A1
公开(公告)日:2024-06-06
申请号:US18554643
申请日:2022-01-17
Applicant: EBARA CORPORATION
Inventor: Masashi KABASAWA , Toshimitsu SASAKI , Yoichi SHIOKAWA , Keita YAGI , Yuki WATANABE , Nachiketa CHAUHAN
IPC: B24B37/015 , B24B37/013 , B24B49/04 , B24B49/14
CPC classification number: B24B37/015 , B24B37/013 , B24B49/04 , B24B49/14
Abstract: The present application relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer, while pressing the substrate against a polishing surface of a polishing pad, and more particularly to a polishing method and a polishing apparatus for polishing a substrate while regulating a polishing load based on measurement values of a film-thickness measuring device. The polishing method includes: controlling a temperature of a polishing surface of a polishing pad to a predetermined temperature by use of a pad-temperature regulating apparatus; and polishing a substrate while controlling a polishing load for pressing the substrate against the polishing surface based on measurement values from a film-thickness measuring device provided in the polishing pad.
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公开(公告)号:US20230219187A1
公开(公告)日:2023-07-13
申请号:US18187786
申请日:2023-03-22
Applicant: EBARA CORPORATION
Inventor: Masashi KABASAWA
IPC: B24B37/015 , B24B37/013 , B24B37/04
CPC classification number: B24B37/015 , B24B37/013 , B24B37/04
Abstract: A polishing method capable of terminating polishing of a substrate, such as a wafer, at a preset polishing time is disclosed. The polishing method includes: polishing a substrate by pressing the substrate against a polishing surface of a polishing pad, while regulating a temperature of the polishing surface by a heat exchanger; calculating a target polishing rate required for an actual polishing time to coincide with a target polishing time, the actual polishing time being a time duration from start of polishing the substrate until a film thickness of the substrate reaches a target thickness; determining a target temperature of the polishing surface that can achieve the target polishing rate; and during polishing of the substrate, changing a temperature of the polishing surface to the target temperature by the heat exchanger.
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公开(公告)号:US20210114164A1
公开(公告)日:2021-04-22
申请号:US17065787
申请日:2020-10-08
Applicant: EBARA CORPORATION
Inventor: Masashi KABASAWA , Yasuyuki MOTOSHIMA , Hisanori MATSUO , Keisuke KAMIKI
IPC: B24B37/015 , B24B37/013 , B24B37/20
Abstract: There is disclosed a polishing apparatus which can regulate a surface temperature of the polishing pad without causing a defect such as a scratch on a substrate such as a wafer. The polishing apparatus includes: a non-contact type pad-temperature regulating device; a pad-temperature measuring device. The pad-temperature measuring device is arranged adjacent to the pad-temperature regulating device and on a downstream side of the pad-temperature regulating device in a rotation direction of a polishing table.
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公开(公告)号:US20190126428A1
公开(公告)日:2019-05-02
申请号:US16173937
申请日:2018-10-29
Applicant: EBARA CORPORATION
Inventor: Toru MARUYAMA , Yasuyuki MOTOSHIMA , Hisanori MATSUO , Masashi KABASAWA
IPC: B24B37/015 , B24B37/04 , H01L21/306 , F28F19/04 , F28G1/16
Abstract: A heat exchanger capable of preventing sticking of slurry is disclosed. The heat exchanger includes: a flow passage structure having a heating flow passage and a cooling flow passage formed therein; and a water-repellent material covering a side surface of the flow passage structure. A side surface of the heat exchanger is constituted by the water-repellent material.
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