公开(公告)号：US20150099424A1

公开(公告)日：2015-04-09

申请号：US14506562

申请日：2014-10-03

Applicant: EBARA CORPORATION

Inventor： Taro TAKAHASHI ,  Yasumitsu KAWABATA

IPC: B24B49/18 ,  H01L21/304

CPC classification number: B24B49/18 ,  B24B37/013

Abstract: A polishing method includes: rotating a polishing table that supports a polishing pad; polishing a conductive film by pressing a substrate having the conductive film against the polishing pad; obtaining a film thickness signal with use of an eddy current film-thickness sensor disposed in the polishing table; determining a thickness of the polishing pad based on the film thickness signal; determining a polishing rate of the conductive film corresponding to the determined thickness of the polishing pad; calculating an expected amount of polishing of the conductive film to be polished at the determined polishing rate for a predetermined polishing time; calculating a temporary end-point film thickness by adding the expected amount of polishing to a target thickness; and terminating polishing of the conductive film when the predetermined polishing time has elapsed from a point of time when the thickness of the conductive film has reached the temporary end-point film thickness.

Abstract translation: 抛光方法包括：旋转支撑抛光垫的抛光台; 通过将具有导电膜的基板压靠在抛光垫上来研磨导电膜; 使用设置在所述研磨台中的涡流膜厚度传感器获得膜厚信号; 基于所述膜厚度信号确定所述抛光垫的厚度; 确定与所确定的抛光垫的厚度相对应的导电膜的抛光速率; 以预定的抛光时间以确定的抛光速率计算待抛光的导电膜的预期抛光量; 通过将预期抛光量加到目标厚度上来计算临时终点膜厚度; 并且在从导电膜的厚度达到临时终点膜厚度的时刻开始经过规定的研磨时间后，终止对导电膜的研磨。