公开(公告)号：WO2020257239A1

公开(公告)日：2020-12-24

申请号：PCT/US2020/038071

申请日：2020-06-17

Applicant: ELBIT SYSTEMS OF AMERICA, LLC

Inventor： SMITH, Arlynn W. ,  CHILCOTT, Dan

IPC: H01J31/50 ,  H01J9/12 ,  H01J1/34

Abstract: A method of manufacturing a multi-layer image intensifier wafer includes fabricating first and second glass wafers, each having an array of cavities that extend between respective openings in first and second surfaces of the respective glass wafer; doping a semiconductor wafer to generate a plurality of electrons for each electron that impinges a first surface of the semiconductor wafer and to direct the plurality of electrons to a second surface of the semiconductor wafer, bonding a photo-cathode wafer to the first glass wafer; bonding the semiconductor wafer between the first and second glass wafers, and bonding the second glass wafer between the semiconductor wafer and an anode wafer (e.g., a phosphor screen or other electron detector). A section of the multi-layer image intensifier wafer may be sliced and evacuated to provide a multi-layer image intensifier.

公开(公告)号：WO2020257269A1

公开(公告)日：2020-12-24

申请号：PCT/US2020/038119

申请日：2020-06-17

Applicant: ELBIT SYSTEMS OF AMERICA, LLC

Inventor： SMITH, Arlynn W. ,  CHILCOTT, Dan

IPC: H01J31/50 ,  H01J9/12 ,  H01J43/08

Abstract: A light intensifier includes a semiconductor structure to multiply electrons and block stray particles. A thin gain substrate layer includes an electron multiplier region that is doped to generate a plurality of electrons for each electron that impinges on an input surface of the gain substrate layer and blocking structures that are doped to direct the plurality of electrons towards emission areas of an emission surface of the gain substrate layer. Respective ribs of a first plurality of ribs on the input surface of the gain substrate layer are vertically aligned with respective blocking structures, and respective blocking structures are vertically aligned with respective ribs of a second plurality of ribs at the emission surface. This alignment directs electrons along a path through the gain substrate layer to reduce noise. The support ribs provide mechanical strength to the gain substrate layer, improving robustness of the light intensifier while minimizing noise.

公开(公告)号：WO2022026230A2

公开(公告)日：2022-02-03

申请号：PCT/US2021/042153

申请日：2021-07-19

Applicant: ELBIT SYSTEMS OF AMERICA, LLC

Inventor： CHILCOTT, Dan ,  SMITH, Arlynn, W. ,  HAMMOND, John, B.

IPC: H01J19/24 ,  H01J19/42 ,  H01J31/50 ,  H01J43/08 ,  H01J1/34 ,  H01J9/12 ,  B81B7/02 ,  H01J2229/4824 ,  H01J2231/50063 ,  H01J29/04 ,  H01J29/085 ,  H01J31/26

Abstract: An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.

公开(公告)号：EP4189719A2

公开(公告)日：2023-06-07

申请号：EP21849111.6

申请日：2021-07-19

Applicant: Elbit Systems of America, LLC

Inventor： CHILCOTT, Dan ,  SMITH, Arlynn, W. ,  HAMMOND, John, B.

IPC: H01J19/24 ,  H01J19/42 ,  H01J31/50 ,  H01J43/08 ,  H01J1/34 ,  H01J9/12 ,  B81B7/02

公开(公告)号：EP3987562A1

公开(公告)日：2022-04-27

申请号：EP20827310.2

申请日：2020-06-17

Applicant: Elbit Systems of America, LLC

Inventor： SMITH, Arlynn W. ,  CHILCOTT, Dan

IPC: H01J31/50 ,  H01J9/12 ,  H01J1/34

公开(公告)号：EP3987561A1

公开(公告)日：2022-04-27

申请号：EP20825495.3

申请日：2020-06-17

Applicant: Elbit Systems of America, LLC

Inventor： SMITH, Arlynn W. ,  CHILCOTT, Dan

IPC: H01J31/50 ,  H01J9/12 ,  H01J43/08