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    PHOTOSENSITIVE DEVICE WITH ELECTRIC SHUTTER
    1.
    发明申请
    PHOTOSENSITIVE DEVICE WITH ELECTRIC SHUTTER 审中-公开

    公开(公告)号：US20190296178A1

    公开(公告)日：2019-09-26

    申请号：US16361473

    申请日：2019-03-22

    Applicant: EMBERION OY

    Inventor： Alexander BESSONOV ,  Alan COLLI ,  Mark ALLEN

    IPC: H01L31/113 ,  H01L31/0352 ,  H01L31/028 ,  G01J1/44

    Abstract: A photosensitive transistor or voltage-mode device which comprises a gate electrode, a layer of ambipolar two-dimensional material such as graphene and a layer of photoactive semiconducting material forms a junction with the ambipolar two-dimensional material. The photoactive semiconducting material and the ambipolar two-dimensional material are configured so that there is a non-screening gate voltage interval where an interface voltage at the junction between the photoactive semiconducting layer and the ambipolar two-dimensional material can be changed by applying to the gate electrode a gate voltage which falls within the non-screening gate voltage interval. The non-screening gate voltage interval comprises a flat-band gate voltage at which the interface voltage is zero. An electrical shutter can be operated at this gate voltage.

    MULTISPECTRAL PHOTODETECTOR ARRAY
    2.
    发明申请
    MULTISPECTRAL PHOTODETECTOR ARRAY 有权

    公开(公告)号：US20210381894A1

    公开(公告)日：2021-12-09

    申请号：US17283790

    申请日：2019-10-11

    Applicant: EMBERION OY

    Inventor： Alan COLLI ,  Alexander BESSONOV

    IPC: G01J3/36 ,  G01J5/10 ,  H01L27/146 ,  H01L31/18

    Abstract: A photodetector array comprising at least one first sensor and at least one second sensor on the horizontal surface of the array substrate. The at least one first sensor is sensitive to radiation in a first wavelength range which comprises long-wavelength infrared wavelengths, and the at least one second sensor is sensitive to radiation in a second wavelength range which comprises wavelengths shorter than long-wavelength infrared. The array substrate comprises a vertical cavity on its horizontal surface, and the first sensor comprises a layer of pyroelectric material (65) which extends horizontally across the vertical cavity in the first area. A first part of a layer of two-dimensional layered material at least partly covers the layer of pyroelectric material (65), and a second part of the layer of two-dimensional layered material at least partly covers the foundation of the second sensor.

    PHOTOSENSITIVE FIELD-EFFECT TRANSISTOR
    4.
    发明申请
    PHOTOSENSITIVE FIELD-EFFECT TRANSISTOR 审中-公开

    公开(公告)号：US20190140130A1

    公开(公告)日：2019-05-09

    申请号：US16183298

    申请日：2018-11-07

    Applicant: EMBERION OY

    Inventor： Alexander BESSONOV ,  Mark ALLEN

    IPC: H01L31/112 ,  H01L31/0352 ,  H01L31/028

    Abstract: A photosensitive field-effect transistor configured to provide an electrical response when illuminated by electromagnetic radiation incident on the transistor. The photosensitive field-effect transistor comprises a layer of two-dimensional material which forms a horizontal transistor channel configured to transport current, and a horizontal semiconducting layer in contact with the transistor channel. The semiconducting layer comprises two or more assemblies of semiconducting material. If the two-dimensional material in the transistor channel has a high work function, the assemblies of semiconducting material are vertically stacked on the transistor channel in order of decreasing work function. If the two-dimensional material in the transistor channel has a low work function, the assemblies of semiconducting material are vertically stacked on the transistor channel in order of increasing work function. The semiconducting materials may, for example, comprise semiconductor nanocrystals, quantum dots or thin-film semiconducting layers.

    P-I-N PHOTODETECTOR
    5.
    发明申请
    P-I-N PHOTODETECTOR 有权

    公开(公告)号：US20220102570A1

    公开(公告)日：2022-03-31

    申请号：US17298359

    申请日：2019-11-28

    Applicant: EMBERION OY

    Inventor： Alexander BESSONOV ,  Mark ALLEN

    IPC: H01L31/105 ,  H01L31/0224

    Abstract: A photodetector which comprises a measurement layer (15) and at least a first photoactive layer (11) which covers the measurement layer (15). The measurement layer (15) may be a transistor channel or a charge accumulation electrode. The conductivity type of the measurement layer is n-type, p-type or ambipolar and the first photoactive layer (11) exhibits intrinsic semiconductivity.

    QUANTUM DOT PHOTODETECTOR APPARATUS AND ASSOCIATED METHODS
    9.
    发明申请
    QUANTUM DOT PHOTODETECTOR APPARATUS AND ASSOCIATED METHODS 审中-公开

    公开(公告)号：US20190051786A1

    公开(公告)日：2019-02-14

    申请号：US16165248

    申请日：2018-10-19

    Applicant: EMBERION OY

    Inventor： Richard WHITE ,  Alexander BESSONOV ,  Piers ANDREW ,  Mark ALLEN ,  Elisabetta SPIGONE ,  Michael Robert ASTLEY

    IPC: H01L31/112 ,  H01L31/0352 ,  H01L31/18

    CPC classification number: H01L31/1127 ,  H01L31/035218 ,  H01L31/113 ,  H01L31/18

    Abstract: An apparatus comprises a layer of channel material, source and drain electrodes configured to enable a flow of electrical current through the channel material, and a layer of quantum dot material configured to generate electron-hole pairs on exposure to electromagnetic radiation to produce a detectable change in the electrical current indicative of one or more of the presence and magnitude of the electromagnetic radiation. The layer of quantum dot material is positioned between the channel material and a layer of conductive material. The layers of channel and conductive material have work functions such that respective built-in electric fields are created at the interfaces between the layer of quantum dot material and the channel and conductive material. The electric field at each interface acts in the same direction to promote separation of the electrons and holes of the electron-hole pairs to facilitate production of the detectable change in electrical current.

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