公开(公告)号：WO0159853A3

公开(公告)日：2002-02-21

申请号：PCT/DE0100405

申请日：2001-02-02

Applicant: EPCOS AG ,  PAHL WOLFGANG ,  TRAUSCH GUENTER

Inventor： PAHL WOLFGANG ,  TRAUSCH GUENTER

IPC: H01L41/09 ,  H01L41/04 ,  H01L41/18 ,  H01L41/22 ,  H03H3/08 ,  H03H9/02 ,  H03H9/25 ,  H01L41/08 ,  G03F7/09

CPC classification number: H01L41/04 ,  H03H3/08 ,  H03H9/02622

Abstract: The aim of the invention is to increase resistance to breaking and to prevent optical reflections during structuring for producing components on piezoelectric substrates. To this end, an absorber layer (2) which has high optical absorption, binds particles and seals cracks is provided on the rear side of the substrate (1). The absorber layer (2) is advantageously also electroconductive in order to be able to divert pyroelectric charges.

Abstract translation: 为了提高对压电基片部件的制造图案化期间的断裂强度和光学反射varhinderung吸收层（2）在衬底的背面提出提供（1），其具有高的光吸收，是粒子 - 结合和anrissversiegelnd。 有利的是，吸收体层（2）还用于排出电荷电Laitfähig热电。

公开(公告)号：DE10005596A1

公开(公告)日：2001-08-16

申请号：DE10005596

申请日：2000-02-09

Applicant: EPCOS AG

Inventor： PAHL WOLFGANG ,  TRAUSCH GUENTER

IPC: H01L41/09 ,  H01L41/04 ,  H01L41/18 ,  H01L41/22 ,  H03H3/08 ,  H03H9/02 ,  H03H9/25

Abstract: A piezoelectric substrate comprises a wafer (1) made of piezoelectric crystal material with an absorber layer (2) having a high optical absorption applied on the rear side of the wafer. An independent claim is also included for the production of a component having a piezoelectric substrate comprising applying an absorber layer to the rear side of a wafer; forming component structures having a metallization on the front side of the wafer; and using phototechnology to produce the component structures. Preferred Features: The rear side of the wafer is mechanically roughened below the absorber layer. The absorber layer is a high ohmic layer with an electrically insulating lacquer as matrix, in which electrically conducting particles, preferably carbon black or graphite, are embedded.