公开(公告)号：WO2022238231A1

公开(公告)日：2022-11-17

申请号：PCT/EP2022/062158

申请日：2022-05-05

Applicant: EPINOVATECH AB

Inventor： OLSSON, Martin ,  NORELIUS, Andreas

IPC: H02M1/00 ,  H02M7/00 ,  H05K1/11 ,  H02M1/42 ,  H03K17/0814 ,  H02M1/44 ,  H02M7/219 ,  H02M1/0077 ,  H02M7/003 ,  H03K17/08142 ,  H05K1/144 ,  H05K2201/042 ,  H05K2201/2036

Abstract: The present invention relates to a power converter device (1) comprising; a first circuit board (100), the first circuit board comprising a first driver (102) and at least four GaN HEMT devices (101) arranged in pairs (103, 104), said pairs connected in parallel; a second circuit board (200), the second circuit board comprising a second driver (202), and at least four MOSFET devices (201) arranged in pairs (203, 204), said pairs connected in parallel; the power converter device comprises at least two electrical connections (20) between the two circuit boards; wherein the first circuit board extends in a first plane and the second circuit board extends in a second plane, and the first and second circuit boards are arranged one above the other such that the two planes extends in parallel and the electrical connections between the two circuit boards extends in a direction substantially perpendicular to said first and second planes; and wherein said at least four GaN HEMT devices (101) are electrically connected equidistant to said first driver (102). The invention further relates to a system (2, 3) comprising such power converter device, and the use thereof.

公开(公告)号：WO2023006410A1

公开(公告)日：2023-02-02

申请号：PCT/EP2022/069468

申请日：2022-07-12

Applicant: EPINOVATECH AB

Inventor： OLSSON, Martin

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/20 ,  H01L29/08 ,  H01L29/10

Abstract: A transistor (1) comprising a source (10), a body (12) and a drain (14), the transistor (1) further comprising a plurality of semiconductor layers (20), wherein layers of the plurality of semiconductor layers (20) are made of AIGaN or GaN, and wherein the plurality of semiconductor layers (20) is configured such that an aluminum content changes between each consecutive layer such that every second layer has a lower aluminum content than the neighboring mutually opposite layers thereof, wherein the transistor (1) is either a N-channel metal-oxide-semiconductor, NMOS, transistor (1'), wherein part of the plurality of semiconductor layers (20) is p-doped and forms part of the body (12) of the NMOS transistor (1'); or a P-channel metal-oxide-semiconductor, PMOS, transistor (1"), wherein part of the plurality of semiconductor layers (20) is p-doped and forms part of the source (10) or the drain (14) of the PMOS transistor (1").

公开(公告)号：EP4378004A1

公开(公告)日：2024-06-05

申请号：EP22751303.3

申请日：2022-07-12

Applicant: Epinovatech AB

Inventor： OLSSON, Martin

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/20 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/78 ,  H01L29/66522 ,  H01L29/2003 ,  H01L29/0847 ,  H01L29/1054

公开(公告)号：EP4338272A1

公开(公告)日：2024-03-20

申请号：EP22727341.4

申请日：2022-05-05

Applicant: Epinovatech AB

Inventor： OLSSON, Martin ,  NORELIUS, Andreas

IPC: H02M1/00 ,  H02M7/00 ,  H05K1/11 ,  H02M1/42 ,  H03K17/0814 ,  H02M1/44 ,  H02M7/219

公开(公告)号：EP4090139A1

公开(公告)日：2022-11-16

申请号：EP21172959.5

申请日：2021-05-10

Applicant: Epinovatech AB

Inventor： OLSSON, Martin ,  NORELIUS, Andreas

IPC: H05K1/11 ,  H02M1/42 ,  H02M7/00 ,  H03K17/0814

Abstract: The present invention relates to a power converter device (1), comprising; a first circuit board (100), the first circuit board comprising a first driver (102) and at least four GaN HEMT devices (101) arranged in pairs (103, 104), said pairs connected in parallel; a second circuit board (200), the second circuit board comprising a second driver (202), and at least four MOSFET devices (201) arranged in pairs (203, 204), said pairs connected in parallel; the power converter device comprises at least two electrical connections (20) between the two circuit boards; wherein the first circuit board extends in a first plane and the second circuit board extends in a second plane, and the first and second circuit boards are arranged one above the other such that the two planes extends in parallel and the electrical connections between the two circuit boards extends in a direction substantially perpendicular to said first and second planes; and wherein said at least four GaN HEMT devices (101) are electrically connected equidistant to said first driver (102). The invention further relates to a system (2, 3) comprising such power converter device, and the use thereof.