公开(公告)号：WO2022238231A1

公开(公告)日：2022-11-17

申请号：PCT/EP2022/062158

申请日：2022-05-05

Applicant: EPINOVATECH AB

Inventor： OLSSON, Martin ,  NORELIUS, Andreas

IPC: H02M1/00 ,  H02M7/00 ,  H05K1/11 ,  H02M1/42 ,  H03K17/0814 ,  H02M1/44 ,  H02M7/219 ,  H02M1/0077 ,  H02M7/003 ,  H03K17/08142 ,  H05K1/144 ,  H05K2201/042 ,  H05K2201/2036

Abstract: The present invention relates to a power converter device (1) comprising; a first circuit board (100), the first circuit board comprising a first driver (102) and at least four GaN HEMT devices (101) arranged in pairs (103, 104), said pairs connected in parallel; a second circuit board (200), the second circuit board comprising a second driver (202), and at least four MOSFET devices (201) arranged in pairs (203, 204), said pairs connected in parallel; the power converter device comprises at least two electrical connections (20) between the two circuit boards; wherein the first circuit board extends in a first plane and the second circuit board extends in a second plane, and the first and second circuit boards are arranged one above the other such that the two planes extends in parallel and the electrical connections between the two circuit boards extends in a direction substantially perpendicular to said first and second planes; and wherein said at least four GaN HEMT devices (101) are electrically connected equidistant to said first driver (102). The invention further relates to a system (2, 3) comprising such power converter device, and the use thereof.

公开(公告)号：WO2022223674A2

公开(公告)日：2022-10-27

申请号：PCT/EP2022/060515

申请日：2022-04-21

Applicant: SMA SOLAR TECHNOLOGY AG

Inventor： BRAUN, Gerrit ,  HUEGUES, Roland

IPC: H05K1/14 ,  H05K1/18 ,  H01L23/13 ,  H01L23/373 ,  H01L23/538 ,  H01L25/16 ,  H01L25/18 ,  H05K1/02 ,  H01L23/4006 ,  H01L23/4334 ,  H01L23/5385 ,  H01L23/5389 ,  H05K1/0263 ,  H05K1/141 ,  H05K1/185 ,  H05K2201/041 ,  H05K2201/042 ,  H05K2201/10166 ,  H05K2201/209

Abstract: Es wird eine Leistungshalbleiteranordnung (10, 20, 30) mit einer ersten Leiterplatte (14), einer zweiten Leiterplatte (16) und einem Leistungshalbleiter (12) beschrieben, wobei die erste Leiterplatte (14) mit der zweiten Leiterplatte (16) elektrisch leitend verbunden ist und der Leistungshalbleiter (12) mit der zweiten Leiterplatte (16) elektrisch leitend verbunden ist, und wobei die erste Leiterplatte (14) mit der zweiten Leiterplatte (16) mechanisch über eine leitfähige Kurzdistanzverbindung (18) verbunden ist. Eine Wechselrichterbrücke weist eine solche Leistungshalbleiteranordnung (10, 20, 30), ein Wechselrichter eine solche Wechselrichterbrücke auf.

公开(公告)号：WO2021252652A2

公开(公告)日：2021-12-16

申请号：PCT/US2021/036648

申请日：2021-06-09

Applicant: RAYTHEON COMPANY

Inventor： TAYLOR, Brian, L. ,  DYER, David, M. ,  SPRINKLE, Steven ,  SCHLITTLER, Paul, E.

IPC: H01R24/50 ,  H01R12/73 ,  H01R12/71 ,  H01R12/70 ,  H01P5/028 ,  H01Q21/28 ,  H01Q23/00 ,  H01Q9/16 ,  H01R12/7082 ,  H01R12/716 ,  H01R2103/00 ,  H05K1/0237 ,  H05K1/144 ,  H05K2201/042 ,  H05K2201/10189 ,  H05K3/368

Abstract: A radio frequency (RF) circuit connection assembly comprises a RF circuit board and a RF connector. The RF circuit board has a first side and a second side opposite the first side. A RF circuit is located on the first side and an aperture extends through the RF circuit board from the first side to the second side. The RF connector comprises a barrel having a socket configured to receive a RF bullet, a flange having a mounting surface, and a RF connector pin extending laterally from the barrel. The barrel of the RF connector extends through the aperture of the RF circuit board such that the mounting surface of the flange is seated against the first side of the RF circuit board, and the RF connector pin is electrically coupled to the RF circuit on the first side of the RF circuit board.

公开(公告)号：WO2021221740A1

公开(公告)日：2021-11-04

申请号：PCT/US2021/013847

申请日：2021-01-19

Applicant: RAYTHEON COMPANY

Inventor： PEVZNER, Mikhail ,  HERSEY, Donald, G. ,  BENINATI, Gregory, G. ,  TELLINGHUISEN, Thomas, J. ,  BENEDICT, James, E.

IPC: H05K3/36 ,  H05K3/40 ,  H05K1/144 ,  H05K2201/041 ,  H05K2201/042 ,  H05K2201/09845 ,  H05K2201/10287 ,  H05K2201/1031 ,  H05K2201/2036 ,  H05K2203/0415 ,  H05K2203/049 ,  H05K2203/0495 ,  H05K2203/167 ,  H05K3/3436 ,  H05K3/363 ,  H05K3/365 ,  H05K3/368 ,  H05K3/4015 ,  H05K3/4046

Abstract: Methods and apparatus for an assembly having first and second circuit cards mated together with a ball stack on the first circuit card extending into a through hole in the second circuit card. A wirebond connects the first ball stack to a bond pad on the first surface of the second circuit card forming a low profile connector-less interconnect. The ball stack comprises at least two balls stacked on top of each other and bonded to each other, wherein the balls are generated from wire.

公开(公告)号：WO2021025743A2

公开(公告)日：2021-02-11

申请号：PCT/US2020/031248

申请日：2020-05-04

Applicant: MICROSOFT TECHNOLOGY LICENSING, LLC

Inventor： MONROE, Mark A. ,  BELADY, Christian L.

IPC: G06F1/20 ,  F17C13/00 ,  G11C11/44 ,  H01L23/44 ,  H01L39/00 ,  H05K1/02 ,  H05K1/14 ,  G06F2200/201 ,  H01L23/445 ,  H01L27/18 ,  H05K1/0203 ,  H05K1/0272 ,  H05K1/141 ,  H05K1/181 ,  H05K2201/042 ,  H05K2201/064 ,  H05K2201/10159 ,  H05K7/20236

Abstract: Superconducting computing system housed in a liquid hydrogen environment and related aspects are described. An example superconducting computing system includes a housing, arranged inside a liquid hydrogen environment, where a lower pressure is maintained inside the housing than a pressure outside the housing. The superconducting computing system further includes a substrate, arranged inside the housing, having a surface, where a plurality of components attached to the surface is configured to provide at least one of a computing or a storage functionality, and the substrate further comprises a plurality of circuit traces for interconnecting at least a subset of the plurality of the components. The housing is configured such that each of the plurality of components is configured to operate at a first temperature, where the first temperature is below 4.2 Kelvin, despite the liquid hydrogen environment having a second temperature greater than 4.2 Kelvin.