公开(公告)号：US11600746B2

公开(公告)日：2023-03-07

申请号：US17221563

申请日：2021-04-02

Applicant: EPISTAR CORPORATION

Inventor： Chia-Ming Liu ,  Chang-Hua Hsieh ,  Yung-Chung Pan ,  Chang-Yu Tsai ,  Ching-Chung Hu ,  Ming-Pao Chen ,  Chi Shen ,  Wei-Chieh Lien

IPC: H01L33/14 ,  H01L33/06 ,  H01L33/32 ,  H01L33/26 ,  H01L33/30

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

公开(公告)号：US10971652B2

公开(公告)日：2021-04-06

申请号：US16513264

申请日：2019-07-16

Applicant: EPISTAR CORPORATION

Inventor： Chia-Ming Liu ,  Chang-Hua Hsieh ,  Yung-Chung Pan ,  Chang-Yu Tsai ,  Ching-Chung Hu ,  Ming-Pao Chen ,  Chi Shen ,  Wei-Chieh Lien

IPC: H01L33/26 ,  H01L33/14 ,  H01L33/06 ,  H01L33/04 ,  H01L33/30 ,  H01L33/32 ,  H01L33/20

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

公开(公告)号：US11424383B2

公开(公告)日：2022-08-23

申请号：US17076511

申请日：2020-10-21

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh Hu ,  Wei-Chieh Lien ,  Chen Ou ,  Chia-Ming Liu ,  Tzu-Yi Chi

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01L33/02 ,  H01L33/38 ,  H01L33/42

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

公开(公告)号：US10818818B2

公开(公告)日：2020-10-27

申请号：US16196793

申请日：2018-11-20

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh Hu ,  Wei-Chieh Lien ,  Chen Ou ,  Chia-Ming Liu ,  Tzu-Yi Chi

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01L33/02 ,  H01L33/38 ,  H01L33/42

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

公开(公告)号：US12300764B2

公开(公告)日：2025-05-13

申请号：US18094185

申请日：2023-01-06

Applicant: EPISTAR CORPORATION

Inventor： Chia-Ming Liu ,  Chang-Hua Hsieh ,  Yung-Chung Pan ,  Chang-Yu Tsai ,  Ching-Chung Hu ,  Ming-Pao Chen ,  Chi Shen ,  Wei-Chieh Lien

IPC: H01L33/14 ,  H01L33/06 ,  H01L33/26 ,  H01L33/32

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-containing layer on a side of the first electron blocking layer opposite to the first aluminum-containing layer, wherein the second aluminum-containing layer has a second thickness and a band gap greater than the band gap of the first electron blocking layer; and wherein a ratio of the second thickness of the second aluminum-containing layer to the first thickness of the first aluminum-containing layer is between 0.8 and 1.2.